DE59903363D1 - Verfahren zum erzeugen einer mikromechanischen struktur für ein mikro-elektromechanisches element - Google Patents
Verfahren zum erzeugen einer mikromechanischen struktur für ein mikro-elektromechanisches elementInfo
- Publication number
- DE59903363D1 DE59903363D1 DE59903363T DE59903363T DE59903363D1 DE 59903363 D1 DE59903363 D1 DE 59903363D1 DE 59903363 T DE59903363 T DE 59903363T DE 59903363 T DE59903363 T DE 59903363T DE 59903363 D1 DE59903363 D1 DE 59903363D1
- Authority
- DE
- Germany
- Prior art keywords
- micro
- producing
- micromechanical structure
- electromechanical element
- electromechanical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N99/00—Subject matter not provided for in other groups of this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/019—Bonding or gluing multiple substrate layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
- G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
- G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
- Micromachines (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19857741 | 1998-12-15 | ||
DE19927971A DE19927971A1 (de) | 1998-12-15 | 1999-06-18 | Verfahren zum Erzeugen einer mikromechanischen Struktur für ein mikro-elektromechanisches Element |
PCT/EP1999/007206 WO2000036385A1 (de) | 1998-12-15 | 1999-09-29 | Verfahren zum erzeugen einer mikromechanischen struktur für ein mikro-elektromechanisches element |
Publications (1)
Publication Number | Publication Date |
---|---|
DE59903363D1 true DE59903363D1 (de) | 2002-12-12 |
Family
ID=7891092
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19927971A Withdrawn DE19927971A1 (de) | 1998-12-15 | 1999-06-18 | Verfahren zum Erzeugen einer mikromechanischen Struktur für ein mikro-elektromechanisches Element |
DE19927970A Withdrawn DE19927970A1 (de) | 1998-12-15 | 1999-06-18 | Verfahren zum Erzeugen eines mikro-elektromechanischen Elements |
DE59903363T Expired - Lifetime DE59903363D1 (de) | 1998-12-15 | 1999-09-29 | Verfahren zum erzeugen einer mikromechanischen struktur für ein mikro-elektromechanisches element |
DE59907399T Expired - Lifetime DE59907399D1 (de) | 1998-12-15 | 1999-09-29 | Verfahren zum erzeugen eines mikro-elektromechanischen elements |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19927971A Withdrawn DE19927971A1 (de) | 1998-12-15 | 1999-06-18 | Verfahren zum Erzeugen einer mikromechanischen Struktur für ein mikro-elektromechanisches Element |
DE19927970A Withdrawn DE19927970A1 (de) | 1998-12-15 | 1999-06-18 | Verfahren zum Erzeugen eines mikro-elektromechanischen Elements |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE59907399T Expired - Lifetime DE59907399D1 (de) | 1998-12-15 | 1999-09-29 | Verfahren zum erzeugen eines mikro-elektromechanischen elements |
Country Status (1)
Country | Link |
---|---|
DE (4) | DE19927971A1 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1236974A1 (de) * | 2001-03-01 | 2002-09-04 | Seyonic SA | Vorrichtung zur Druckmessung in zwei Punkten einer strömenden Flüssigkeit |
DE10257097B4 (de) * | 2002-12-05 | 2005-12-22 | X-Fab Semiconductor Foundries Ag | Verfahren zur Herstellung von mikroelektromechanischen Systemen (Microelectromechanical Systems: MEMS) mittels Silizium-Hochtemperatur-Fusionsbonden |
DE102004003180A1 (de) * | 2004-01-22 | 2005-08-18 | Robert Bosch Gmbh | Bauteil mit elektrischem Anschluss im Deckel |
DE102017206766A1 (de) * | 2017-04-21 | 2018-10-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Mems-wandler zum interagieren mit einem volumenstrom eines fluids und verfahren zum herstellen desselben |
-
1999
- 1999-06-18 DE DE19927971A patent/DE19927971A1/de not_active Withdrawn
- 1999-06-18 DE DE19927970A patent/DE19927970A1/de not_active Withdrawn
- 1999-09-29 DE DE59903363T patent/DE59903363D1/de not_active Expired - Lifetime
- 1999-09-29 DE DE59907399T patent/DE59907399D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE19927971A1 (de) | 2000-06-29 |
DE19927970A1 (de) | 2000-06-29 |
DE59907399D1 (de) | 2003-11-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: IP VERWERTUNGS GMBH, 82031 GRUENWALD, DE |