DE4446992A1 - Vorrichtung zum Abscheiden von Schichten auf Substraten - Google Patents
Vorrichtung zum Abscheiden von Schichten auf SubstratenInfo
- Publication number
- DE4446992A1 DE4446992A1 DE4446992A DE4446992A DE4446992A1 DE 4446992 A1 DE4446992 A1 DE 4446992A1 DE 4446992 A DE4446992 A DE 4446992A DE 4446992 A DE4446992 A DE 4446992A DE 4446992 A1 DE4446992 A1 DE 4446992A1
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- substrate holder
- carrier
- flat coils
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Description
Beispielsweise ist der Substrathalter gemäß Anspruch 2 durch einen Gasstrom gegenüber dem Substrathalte-Träger anhebbar und/oder drehbar. Insbesondere kann das Anheben und/oder Drehen mittels "gas-foil-rotation" erfolgen. Darüberhinaus sind Subtrathalter und Substrathalte-Träger gegeneinander thermisch isoliert.
Nach Anspruch 3 ist der Substrathalter mittels Wider standsheizung beheizbar. Alternativ sind induktive oder rf-induktive Heizsysteme am Substrathalter vorzusehen. Ferner sieht Anspruch 5 eine Hochfrequenzheizung zur Heizung des Substrats vor. Hierzu ist wenigstens eine spiralförmige Flachspule direkt unter dem Substrathal ter anzubringen. Diese Ausbildung hat den Vorteil, daß bei kompakten Abmessungen ein effizienter Energieein trag erfolgt.
Claims (15)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4446992A DE4446992B4 (de) | 1994-01-19 | 1994-12-28 | Vorrichtung zum Abscheiden von Schichten auf Substraten |
PCT/DE1995/000181 WO1996020293A1 (de) | 1994-12-28 | 1995-02-14 | Vorrichtung zum abscheiden von schichten |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4401457 | 1994-01-19 | ||
DEP4401457.0 | 1994-01-19 | ||
DEP4404468.2 | 1994-02-11 | ||
DE4404468 | 1994-02-11 | ||
DE4446992A DE4446992B4 (de) | 1994-01-19 | 1994-12-28 | Vorrichtung zum Abscheiden von Schichten auf Substraten |
Publications (2)
Publication Number | Publication Date |
---|---|
DE4446992A1 true DE4446992A1 (de) | 1995-07-20 |
DE4446992B4 DE4446992B4 (de) | 2006-05-11 |
Family
ID=25933133
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE4446992A Expired - Fee Related DE4446992B4 (de) | 1994-01-19 | 1994-12-28 | Vorrichtung zum Abscheiden von Schichten auf Substraten |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE4446992B4 (de) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6554907B2 (en) | 2001-01-02 | 2003-04-29 | Applied Materials, Inc. | Susceptor with internal support |
US6623563B2 (en) * | 2001-01-02 | 2003-09-23 | Applied Materials, Inc. | Susceptor with bi-metal effect |
US6964876B2 (en) | 2001-05-17 | 2005-11-15 | Aixtron Ag | Method and device for depositing layers |
EP3419049A1 (de) * | 2017-06-22 | 2018-12-26 | Meyer Burger (Germany) GmbH | Beheizbarer waferträger und bearbeitungsverfahren |
DE102022126327A1 (de) | 2022-10-11 | 2024-04-11 | Dr. Eberl Mbe-Komponenten Gmbh | Elektronenstrahl-substratheizung für beschichtung, aufdampfung oder molekularstrahlepitaxie |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4293755A (en) * | 1978-10-23 | 1981-10-06 | General Instrument Corporation | Method of cooling induction-heated vapor deposition apparatus and cooling apparatus therefor |
US4647361A (en) * | 1985-09-03 | 1987-03-03 | International Business Machines Corporation | Sputtering apparatus |
US5062386A (en) * | 1987-07-27 | 1991-11-05 | Epitaxy Systems, Inc. | Induction heated pancake epitaxial reactor |
-
1994
- 1994-12-28 DE DE4446992A patent/DE4446992B4/de not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6554907B2 (en) | 2001-01-02 | 2003-04-29 | Applied Materials, Inc. | Susceptor with internal support |
US6623563B2 (en) * | 2001-01-02 | 2003-09-23 | Applied Materials, Inc. | Susceptor with bi-metal effect |
US6964876B2 (en) | 2001-05-17 | 2005-11-15 | Aixtron Ag | Method and device for depositing layers |
EP3419049A1 (de) * | 2017-06-22 | 2018-12-26 | Meyer Burger (Germany) GmbH | Beheizbarer waferträger und bearbeitungsverfahren |
WO2018234389A1 (de) * | 2017-06-22 | 2018-12-27 | Meyer Burger (Germany) Gmbh | Beheizbarer waferträger und bearbeitungsverfahren |
DE102022126327A1 (de) | 2022-10-11 | 2024-04-11 | Dr. Eberl Mbe-Komponenten Gmbh | Elektronenstrahl-substratheizung für beschichtung, aufdampfung oder molekularstrahlepitaxie |
Also Published As
Publication number | Publication date |
---|---|
DE4446992B4 (de) | 2006-05-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8110 | Request for examination paragraph 44 | ||
8127 | New person/name/address of the applicant |
Owner name: AIXTRON AG, 52072 AACHEN, DE |
|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: AIXTRON AG, 52134 HERZOGENRATH, DE |
|
R082 | Change of representative |
Representative=s name: RIEDER & PARTNER PATENTANWAELTE - RECHTSANWALT, DE Representative=s name: RIEDER & PARTNER PATENTANWAELTE - RECHTSANWALT, 42 |
|
R081 | Change of applicant/patentee |
Owner name: AIXTRON SE, DE Free format text: FORMER OWNER: AIXTRON AG, 52134 HERZOGENRATH, DE Effective date: 20111104 |
|
R082 | Change of representative |
Representative=s name: RIEDER & PARTNER PATENTANWAELTE - RECHTSANWALT, DE Effective date: 20111104 |
|
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |
Effective date: 20130702 |