DE4437484A1 - Component contact bonding reducing thermal stress on components during bonding - Google Patents

Component contact bonding reducing thermal stress on components during bonding

Info

Publication number
DE4437484A1
DE4437484A1 DE4437484A DE4437484A DE4437484A1 DE 4437484 A1 DE4437484 A1 DE 4437484A1 DE 4437484 A DE4437484 A DE 4437484A DE 4437484 A DE4437484 A DE 4437484A DE 4437484 A1 DE4437484 A1 DE 4437484A1
Authority
DE
Germany
Prior art keywords
bonding
component
thermal stress
components during
component contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE4437484A
Other languages
German (de)
Inventor
Manfred Dr Rauch
Michael Prof Hoesel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMS MIKROSYSTEME GMBH CHEMNITZ, 09125 CHEMNITZ, DE
Original Assignee
CMS Mikrosysteme GmbH Chemnitz
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Filing date
Publication date
Application filed by CMS Mikrosysteme GmbH Chemnitz filed Critical CMS Mikrosysteme GmbH Chemnitz
Priority to DE4437484A priority Critical patent/DE4437484A1/en
Publication of DE4437484A1 publication Critical patent/DE4437484A1/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
    • H01R43/02—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for soldered or welded connections
    • H01R43/0221—Laser welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/32—Wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/42—Printed circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H01L2224/85207—Thermosonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/8521—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/85214—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Abstract

The appts. to bring wires of components and component groups into contact has an energy supply (5) additionally over the appts. to apply thermocompression or thermosonic bonding. At least one tilting mirror (2) is at the beam path from the energy supply (5) to deflect the beam (1) to contact path (3) of the component or component group. The energy supply (5) is a semiconductor laser module.

Description

Die Erfindung betrifft eine Vorrichtung zur Drahtkontaktierung von Bauelementen oder Baugruppen.The invention relates to a device for wire contacting components or Assemblies.

Das Thermosonicdrahtbinden ist das am häufigsten benutzte Verfahren zur Chipanschlußkontaktierung elektronischer Schaltkreise, während das Thermokompressionsdrahtbonden vor allem bei der Kontaktierung ultraschallempfindlicher Bauelemente, z. B. mit mikromechanischen Schwingungselementen versehenen Mikrosystemen, von Bedeutung ist.Thermosonic wire binding is the most commonly used method for Chip connection contacting of electronic circuits, while that Thermocompression wire bonding is particularly sensitive to ultrasound when making contact Components, e.g. B. microsystems provided with micromechanical vibration elements, is important.

Als Nachteil beider Verfahren ist, insbesondere in Hinsicht auf wärmeempfindliche Strukturen und Systeme, die Notwendigkeit der Aufheizung durch eine Substratheizung auf typische Bereiche von 150°C (Thermosonic) bzw. 400°C (Thermokompression) zu werten.The disadvantage of both methods is, particularly with regard to heat-sensitive structures and systems, the need for heating by typical substrate heating Ranges of 150 ° C (Thermosonic) or 400 ° C (Thermocompression).

Mit der Umgehung dieses Nachteils befassen sich folgende Schriften:The following writings deal with the circumvention of this disadvantage:

In DE 39 33 982 und in DE 40 22 664 werden Bondwerkzeuge vorgeschlagen, die durch einen speziellen Aufbau eine Hochfrequenz- bzw. eine Widerstandserwärmung des am Kontakt beteiligten Drahtstückes vorschlagen. Nachteilig ist hier die Notwendigkeit spezieller Kapillaren und Eingriffe in den üblichen Bondablauf.DE 39 33 982 and DE 40 22 664 propose bonding tools which are characterized by a special structure a high frequency or resistance heating of the contact suggest the piece of wire involved. The disadvantage here is the need for special capillaries and interventions in the usual bond process.

In DE 29 19 998 wird partielle Wärmebehandlung der Trägerstrukturen, d. h. nicht der Chipanschlüsse, unter Schutzgas vorgeschlagen, um die ansonst für die Thermokompression notwendige Edelmetallisierung der Anschlußstrukturen zu umgehen. Die vorgeschlagene Lösung ist jedoch hinsichtlich ihrer konstruktiven Realisierung noch präzisiert.DE 29 19 998 describes partial heat treatment of the support structures, i. H. not the Chip connections, under protective gas, are suggested to the otherwise for thermocompression to circumvent the necessary noble metallization of the connection structures. The proposed solution is, however, still specified in terms of its constructive implementation.

Zur Verminderung des notwendigen Wärmeeintrages wird in DD 2 05 296 eine niederfrequente Drehbewegung der Bondkapillare um ihre Längsachse vorgeschlagen, jedoch stellt diese Vorgehensweise eine starke Veränderung des eigentlichen Bondprozesses dar, verlangt einen hohen konstruktiven Aufwand und ist beim Ball-Wedge-Bonden nur am Ball anwendbar.To reduce the necessary heat input, a low frequency is used in DD 2 05 296 Rotational movement of the bond capillary about its longitudinal axis is proposed, but this represents Procedure represents a major change in the actual bond process requires one high construction effort and can only be used on the ball with ball wedge bonding.

Ein relativ neuer Weg ist die Erhöhung der Ultraschallfrequenz von bisher typischen 60 kHz auf 125 kHz, wie er in EP 0535433 vorgeschlagen wird, jedoch beinhaltet diese Vorgehensweise das Verwerfen der bisherigen Bondmaschinen.A relatively new way is to increase the ultrasound frequency from the typical 60 kHz 125 kHz, as proposed in EP 0535433, but this procedure includes this Discard the previous bond machines.

Der im Patentanspruch 1 angegebenen Erfindung liegt das Problem zugrunde, eine Kontaktierungseinrichtung zu schaffen, die den Nachteil der hohen Temperaturbelastung des zu kontaktierenden Gesamtsystems beim Thermosonic- und Thermokopressionsdrahtbinden auf eine einfache Art und Weise umgeht und an bestehenden Bondeinrichtungen verwendet werden kann. The invention specified in claim 1 is based on the problem, a To create contacting device, which has the disadvantage of high temperature stress contacting overall system for thermosonic and thermocompression wire binding bypasses in a simple manner and can be used on existing bonding devices can.  

Dieses Problem wird durch die im Patentanspruch 1 aufgeführten Merkmale gelöst.This problem is solved by the features listed in claim 1.

Die mit der Erfindung erzielten Vorteile bestehen insbesondere darin, daß die zur Kontaktierung notwendige Temperaturerhöhung nicht durch Wärmezufuhr durch das Substrat, sondern durch die Absorption eines Energiestrahls in der Kontaktstelle selbst realisiert wird. Die Auslenkung des Strahls in die entsprechende Kontaktebene erfolgt trägheitslos durch mindestens einen schwenkbaren Kippspiegel.The advantages achieved with the invention are, in particular, that for contacting necessary temperature increase not by supplying heat through the substrate, but by the absorption of an energy beam is realized in the contact point itself. The deflection of the beam into the corresponding contact plane takes place without inertia by at least one swiveling tilting mirror.

Eine vorteilhafte Ausgestaltung der Erfindung ist im Patentanspruch 2 angegeben. Als Energiequelle kommt dabei ein Halbleiterlasermodul zum Einsatz.An advantageous embodiment of the invention is specified in claim 2. As A semiconductor laser module is used as the energy source.

Ein Ausführungsbeispiel der Erfindung ist in der Zeichnung dargestellt und wird im folgenden näher beschrieben.An embodiment of the invention is shown in the drawing and is in the following described in more detail.

Die Figur zeigt den prinzipiellen Aufbau.The figure shows the basic structure.

Der Aufbau der Vorrichtung kann an einer handelsüblichen Bondmaschine vorgenommen werden. Zur Erzeugung des Energiestrahls 1 ist an der Bondmaschine eine Energiequelle, z. B. ein Halbleiterlasermodul 5 vorzusehen. Der fokussierte Energiestrahl 1 wird durch den mikromechanischen Aktuator 2 genau auf das Kontaktpad 3 gelenkt und führt dort durch Absorptionsvorgänge zu einer für die Kontaktierung notwendigen Temperaturerhöhung des Kontaktpads 3, so daß unmittelbar nach Erreichen der Temperatur durch die Bondkapillare 4 der Bondvorgang ausgeführt werden kann.The device can be constructed on a commercially available bonding machine. To generate the energy beam 1 , an energy source, for. B. provide a semiconductor laser module 5 . The focused energy beam 1 is directed precisely onto the contact pad 3 by the micromechanical actuator 2 and there leads through absorption processes to a temperature increase of the contact pad 3 necessary for contacting, so that the bonding process can be carried out immediately after the temperature through the bonding capillary 4 .

Claims (2)

1. Vorrichtung zur Drahtkontaktierung von Bauelementen oder Baugruppen gekennzeichnet dadurch, daß an bekannte Vorrichtungen zum Thermokompressions- oder Thermosonicbinden zusätzlich oberhalb des zu kontaktierenden Bauelements oder Baugruppe eine Energiequelle (5) befestigt und daß im Strahlengang der Energiequelle (5) mindestens ein schwenkbarer Kippspiegel (2) so angeordnet ist, daß der Strahl (1) auf das Kontaktpad (3) des zu kontaktierenden Bauelements oder Baugruppe abgelenkt wird.1. Device for wire contacting components or assemblies, characterized in that an additional energy source ( 5 ) is attached to known devices for thermocompression or thermosonic bonding above the component or assembly to be contacted, and that in the beam path of the energy source ( 5 ) at least one pivotable tilting mirror ( 2 ) is arranged so that the beam ( 1 ) is deflected onto the contact pad ( 3 ) of the component or assembly to be contacted. 2. Vorrichtung nach Patentanspruch 1, gekennzeichnet dadurch, daß als Energiequelle (5) ein Halbleiterlasermodul verwendet wird.2. Device according to claim 1, characterized in that a semiconductor laser module is used as the energy source ( 5 ).
DE4437484A 1994-10-20 1994-10-20 Component contact bonding reducing thermal stress on components during bonding Withdrawn DE4437484A1 (en)

Priority Applications (1)

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DE4437484A DE4437484A1 (en) 1994-10-20 1994-10-20 Component contact bonding reducing thermal stress on components during bonding

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DE4437484A DE4437484A1 (en) 1994-10-20 1994-10-20 Component contact bonding reducing thermal stress on components during bonding

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DE4437484A1 true DE4437484A1 (en) 1996-04-25

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19814118A1 (en) * 1998-03-30 1999-10-14 F&K Delvotec Bondtechnik Gmbh Device for thermocompression bonding, and thermocompression bonding
WO2003068445A1 (en) * 2002-02-11 2003-08-21 Infineon Technologies Ag Arrangement for wire bonding and method for producing a bonding connection

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19814118A1 (en) * 1998-03-30 1999-10-14 F&K Delvotec Bondtechnik Gmbh Device for thermocompression bonding, and thermocompression bonding
WO2003068445A1 (en) * 2002-02-11 2003-08-21 Infineon Technologies Ag Arrangement for wire bonding and method for producing a bonding connection

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Owner name: CMS MIKROSYSTEME GMBH CHEMNITZ, 09125 CHEMNITZ, DE

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