DE407415C - Process for the production of single crystal wires and sheets of any cross section - Google Patents

Process for the production of single crystal wires and sheets of any cross section

Info

Publication number
DE407415C
DE407415C DEA41820D DEA0041820D DE407415C DE 407415 C DE407415 C DE 407415C DE A41820 D DEA41820 D DE A41820D DE A0041820 D DEA0041820 D DE A0041820D DE 407415 C DE407415 C DE 407415C
Authority
DE
Germany
Prior art keywords
cross
single crystal
section
production
sheets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEA41820D
Other languages
German (de)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OTTO V AUWERS DR
Original Assignee
OTTO V AUWERS DR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by OTTO V AUWERS DR filed Critical OTTO V AUWERS DR
Priority to DEA41820D priority Critical patent/DE407415C/en
Application granted granted Critical
Publication of DE407415C publication Critical patent/DE407415C/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Description

Verfahren zur Herstellung von Einkristalldrähten und -blechen beliebigen Querschnitts. Das zur Herstellung von Einkristallen bisher angewandte Ziehverfahren besteht darin, daß ein Ansatzstab aus der Schmelze des in einem Thermostaten befindlichen zu kristallisierenden Metalls in einer geeigneten Atmosphäre so langsam herausgezogen wird, daß der durch die Oberflächenkräfte über die Oberfläche der Schmelze herausgehobene Tropfen durch die Wärmeableitung des ziehenden Stabes fortlaufend zur .Kristallisation gebracht wird, während er mit seinem untersten Teil noch mit der Schmelze in Berührung bleibt. Das Verfahren hat den Nachteil, daß je nach der Konstanz der Thermostatentemperatur und je nach der Wärmeleitfähigkeit des ziehenden Ansatzstabes und des zu ziehenden Einkristalls erstens die Drähte leicht wechselnden Querschnitt bekommen und zweitens leicht abreißen.Process for the production of single crystal wires and sheets any Cross-sectional. The pulling process used to date for the production of single crystals consists in the fact that an attachment rod from the melt is located in a thermostat metal to be crystallized so slowly pulled out in a suitable atmosphere is that the lifted out by the surface forces above the surface of the melt Drops continue to crystallize through the heat dissipation of the pulling rod is brought while its lowest part is still in contact with the melt remain. The method has the disadvantage that, depending on the constancy of the thermostat temperature and depending on the thermal conductivity of the pulling rod and the one to be pulled Single crystal firstly the wires get slightly changing cross-section and secondly tear off easily.

Das neue Verfahren ersetzt durch Verwendung eines Ziehgefäßes die von Temperaturkonstanz, Wärmeableitung und Ziehgeschwindigkeitskonstanz gleich empfindlich abhängigen Oberflächenkräfte durch die Hubkraft eines Gefäßes. Man taucht einen Hohlkörper von den für das Kristall gewünschten inneren Ausmaßen, eine Kapillare oder einen solchen von flachem Querschnitt, in die Schmelze und hebt diesen, wenn er sich mit der Schmelze gefüllt hat und oben geschlossen ist, langsam aus der Schmelze heraus. Dabei ist die Konstanz der Hubgeschwindigkeit so wie die der Schmelztemperatur weitgehend belanglos, da das Abreißen des sich bildenden Einkristallwerkstückes beim Kristallisationsvorgang hierbei durch die natürlichen Hubkräfte des eingetauchten Hohlkörpers verhindert wird, so daß es gleichgültig wird, wie hoch jeweils der fortschreitende Kristallisationsort über der Schmelze liegt.The new process replaces the by using a drawing vessel equally sensitive to temperature constancy, heat dissipation and drawing speed constancy dependent surface forces caused by the lifting force of a vessel. You dive one Hollow body of the internal dimensions required for the crystal, a capillary or one with a flat cross-section, into the melt and lifts it, if it has filled with the melt and is closed at the top, slowly out of the melt out. The constancy of the lifting speed is the same as that of the melting temperature largely irrelevant, as the single crystal workpiece tearing off during the crystallization process due to the natural lifting forces of the immersed Hollow body is prevented, so that it is indifferent how high each of the advancing The place of crystallization is above the melt.

Durch das neue Verfahren wird die Herstellbarkeit von Einkristallen beliebig vorgegebener Form und Querschnitts unabhängig von Schmelztemperatur, Wärmeleitfähigkeit und Ziehdauer auf jede beliebige kristallisierende Substanz ausgedehnt.The new process makes it possible to produce single crystals any given shape and cross-section independent of melting temperature, thermal conductivity and drawing time extended to any crystallizing substance.

Claims (1)

PATENTANSPRUCH: Verfahren zur Herstellung von Einkristalldrähten und -blechen beliebigen Querschnitts, dadurch gekennzeichnet, daß der zu kristallisierende Werkstoff aus der Schmelze von einem in die Schmelze eingetauchten und nach dem Eintauchen oben zu, schließenden Hohlkörper in seinem Volumen begrenzt und fortlaufend aus der Schmelze herausgehoben wird. Claim: Process for the production of single crystal wires and sheets of any cross-section, characterized in that the material to be crystallized from the melt is limited in volume by a hollow body immersed in the melt and closed at the top after immersion and continuously lifted out of the melt .
DEA41820D 1924-03-18 1924-03-18 Process for the production of single crystal wires and sheets of any cross section Expired DE407415C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DEA41820D DE407415C (en) 1924-03-18 1924-03-18 Process for the production of single crystal wires and sheets of any cross section

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEA41820D DE407415C (en) 1924-03-18 1924-03-18 Process for the production of single crystal wires and sheets of any cross section

Publications (1)

Publication Number Publication Date
DE407415C true DE407415C (en) 1924-12-16

Family

ID=6932754

Family Applications (1)

Application Number Title Priority Date Filing Date
DEA41820D Expired DE407415C (en) 1924-03-18 1924-03-18 Process for the production of single crystal wires and sheets of any cross section

Country Status (1)

Country Link
DE (1) DE407415C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2549744A1 (en) * 1983-07-29 1985-02-01 Commissariat Energie Atomique PROCESS FOR THE PREPARATION OF THIN OR MASSIVE METALLIC OR SEMI-METALLIC FORMS, IN PARTICULAR SILICON

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2549744A1 (en) * 1983-07-29 1985-02-01 Commissariat Energie Atomique PROCESS FOR THE PREPARATION OF THIN OR MASSIVE METALLIC OR SEMI-METALLIC FORMS, IN PARTICULAR SILICON
EP0136196A1 (en) * 1983-07-29 1985-04-03 Commissariat à l'Energie Atomique Process for making thin or massive, metallic or semimetallic objects, especially of silicium
US4617084A (en) * 1983-07-29 1986-10-14 Commissariat A L'energie Atomique Process for the production of metallic or semimetallic shaped elements

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