DE3929847A1 - Verfahren zur herstellung eines elektronischen schaltelementes - Google Patents
Verfahren zur herstellung eines elektronischen schaltelementesInfo
- Publication number
- DE3929847A1 DE3929847A1 DE3929847A DE3929847A DE3929847A1 DE 3929847 A1 DE3929847 A1 DE 3929847A1 DE 3929847 A DE3929847 A DE 3929847A DE 3929847 A DE3929847 A DE 3929847A DE 3929847 A1 DE3929847 A1 DE 3929847A1
- Authority
- DE
- Germany
- Prior art keywords
- dielectric
- tantalum
- pref
- counter electrode
- switching element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052715 tantalum Inorganic materials 0.000 title claims description 12
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims description 12
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 title claims description 7
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 title claims description 7
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 title claims description 7
- 239000013078 crystal Substances 0.000 title abstract 3
- 230000008878 coupling Effects 0.000 title description 2
- 238000010168 coupling process Methods 0.000 title description 2
- 238000005859 coupling reaction Methods 0.000 title description 2
- 238000000034 method Methods 0.000 claims abstract description 26
- 230000008569 process Effects 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 10
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 7
- 238000000137 annealing Methods 0.000 claims abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 5
- 239000001301 oxygen Substances 0.000 claims abstract description 5
- 238000004544 sputter deposition Methods 0.000 claims abstract 2
- 238000005496 tempering Methods 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 230000001154 acute effect Effects 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 230000001419 dependent effect Effects 0.000 abstract description 2
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 239000003989 dielectric material Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000002144 chemical decomposition reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
Landscapes
- Liquid Crystal (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3929847A DE3929847A1 (de) | 1989-09-08 | 1989-09-08 | Verfahren zur herstellung eines elektronischen schaltelementes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3929847A DE3929847A1 (de) | 1989-09-08 | 1989-09-08 | Verfahren zur herstellung eines elektronischen schaltelementes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3929847A1 true DE3929847A1 (de) | 1991-05-08 |
| DE3929847C2 DE3929847C2 (enrdf_load_stackoverflow) | 1993-08-19 |
Family
ID=6388890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3929847A Granted DE3929847A1 (de) | 1989-09-08 | 1989-09-08 | Verfahren zur herstellung eines elektronischen schaltelementes |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3929847A1 (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4337849A1 (de) * | 1992-11-07 | 1994-05-11 | Gold Star Co | Signalleitungsstruktur für eine Dünnfilmtransistor-Flüssigkristallanzeige (TFT-LCD) und Verfahren zur Herstellung derselben |
| DE19538128C1 (de) * | 1995-10-13 | 1997-02-27 | Lueder Ernst | Verfahren zur Herstellung eines elektronischen Schaltelementes |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1252818B (enrdf_load_stackoverflow) * | 1962-03-22 | 1900-01-01 | ||
| DE2259682A1 (de) * | 1971-12-30 | 1973-07-05 | Ibm | Verfahren zur herstellung eines elektrisch schaltbaren bistabilen widerstandselementes |
| EP0271291A2 (en) * | 1986-12-08 | 1988-06-15 | General Electric Company | MIM-diode having mixed oxide insulator |
-
1989
- 1989-09-08 DE DE3929847A patent/DE3929847A1/de active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1252818B (enrdf_load_stackoverflow) * | 1962-03-22 | 1900-01-01 | ||
| DE2259682A1 (de) * | 1971-12-30 | 1973-07-05 | Ibm | Verfahren zur herstellung eines elektrisch schaltbaren bistabilen widerstandselementes |
| EP0271291A2 (en) * | 1986-12-08 | 1988-06-15 | General Electric Company | MIM-diode having mixed oxide insulator |
Non-Patent Citations (2)
| Title |
|---|
| DE-Z: PAGNIA, H. * |
| SOTNIK, N.: Bistable Switching in Electroformed Metal-Insulator-Metal Devices. In: Review Article phys. stat.sol. (a) Bd. 108, 1988, H.11, S.11-15 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4337849A1 (de) * | 1992-11-07 | 1994-05-11 | Gold Star Co | Signalleitungsstruktur für eine Dünnfilmtransistor-Flüssigkristallanzeige (TFT-LCD) und Verfahren zur Herstellung derselben |
| DE19538128C1 (de) * | 1995-10-13 | 1997-02-27 | Lueder Ernst | Verfahren zur Herstellung eines elektronischen Schaltelementes |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3929847C2 (enrdf_load_stackoverflow) | 1993-08-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69418283T2 (de) | TFT mit niedriger parasitärer Kapazität | |
| DE69110563T2 (de) | Flüssigkristall-Anzeigevorrichtung. | |
| DE68923727T2 (de) | Verfahren zur Herstellung eines aktiven Matrixsubstrats. | |
| DE2755151C3 (de) | Flüssigkristall-Bildschirm mit Matrix-Ansteuerung | |
| DE4318028B4 (de) | Flüssigkristallanzeigeeinrichtung und Verfahren zu deren Herstellung | |
| DE69803713T2 (de) | Herstellungsmethode eines Dünnfilm-Transistors | |
| DE102009044337B4 (de) | Arraysubstrat für ein Display sowie Verfahren zum Herstellen desselben | |
| DE3486325T2 (de) | Verfahren zur Herstellung von Rückwänden für Flachbildschirme. | |
| DE69111906T2 (de) | Verfahren zur Herstellung von Matrixen von MIM-Anordnungen und solche Matrixen enthaltende Anzeigevorrichtungen. | |
| DE69017262T2 (de) | Aktiv-Matrix-Anzeigevorrichtung und Verfahren zu ihrer Herstellung. | |
| DE69218092T2 (de) | Elektrodenstruktur einer Flüssigkristall-Anzeigevorrichtung und Verfahren zur Herstellung der Flüssigkristall-Anzeigevorrichtung | |
| DE69021513T2 (de) | Anzeigevorrichtung mit aktiver Matrix. | |
| DE19610283A1 (de) | Verfahren zum Herstellen einer Flüssigkristallanzeigevorrichtung mit Speicherkondensatoren erhöhter Kapazität und Flüssigkristallvorrichtung | |
| DE69122162T2 (de) | Anzeigevorrichtung mit aktiver Matrix und Methode zu ihrer Herstellung | |
| DE3201122A1 (de) | Nicht-linearer widerstand und verfahren zur herstellung eines solche verwendenden matrix-fk-anzeigefeldes | |
| DE3886198T2 (de) | Flüssigkristall-Anzeigevorrichtung. | |
| DE69430792T2 (de) | Anzeigevorrichtung mit aktiver Matrix und Verfahren zu ihrer Herstellung | |
| DE4219665A1 (de) | Fluessigkristallanzeige | |
| DE3118674A1 (de) | Duennfilm-transistor | |
| DE19710248C2 (de) | Flüssigkristallanzeige mit aktiver Matrix und Herstellungsverfahren dafür | |
| DE3832991A1 (de) | Zellstruktur fuer matrix-adressierte fluessigkristallanzeigen und verfahren zu deren herstellung | |
| DE10297732T5 (de) | Mehrdomänen-Flüssigkristallanzeige und ein Dünnfilmtransistorsubstrat derselben | |
| DE3347489C2 (enrdf_load_stackoverflow) | ||
| DE69025228T2 (de) | MIM-Anordnung, Verfahren zu deren Herstellung und eine solche Anordnung enthaltende Anzeigevorrichtung | |
| DE3636232A1 (de) | Duennfilm-feldeffekttransistor und verfahren zu seiner herstellung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OM8 | Search report available as to paragraph 43 lit. 1 sentence 1 patent law | ||
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |