DE3917425A1 - Prodn. of roughened capacitor foil - involving electrolytic pretreatment before foil roughening - Google Patents
Prodn. of roughened capacitor foil - involving electrolytic pretreatment before foil rougheningInfo
- Publication number
- DE3917425A1 DE3917425A1 DE19893917425 DE3917425A DE3917425A1 DE 3917425 A1 DE3917425 A1 DE 3917425A1 DE 19893917425 DE19893917425 DE 19893917425 DE 3917425 A DE3917425 A DE 3917425A DE 3917425 A1 DE3917425 A1 DE 3917425A1
- Authority
- DE
- Germany
- Prior art keywords
- roughening
- bath
- foils
- foil
- roughened
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011888 foil Substances 0.000 title claims abstract description 20
- 238000007788 roughening Methods 0.000 title claims abstract description 10
- 239000003990 capacitor Substances 0.000 title claims abstract description 5
- 238000005530 etching Methods 0.000 claims abstract description 18
- 239000008367 deionised water Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 239000003792 electrolyte Substances 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 235000011007 phosphoric acid Nutrition 0.000 abstract 2
- 239000005030 aluminium foil Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000009827 uniform distribution Methods 0.000 abstract 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- 244000052616 bacterial pathogen Species 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/04—Etching of light metals
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
Die Erfindung betrifft ein Verfahren zum Herstellen von Elektro denfolien für insbesondere Hochvolt-Elektrolytkondensatoren, in dem thermisch behandelte Aluminiumfolien elektrolytisch und/oder chemisch aufgerauht werden.The invention relates to a method for producing electrical foils for in particular high-voltage electrolytic capacitors, in the thermally treated aluminum foils electrolytically and / or be chemically roughened.
Derartige Verfahren werden zur Erhöhung der Volumenkapazität bei der Herstellung von aufgerauhten Aluminiumfolien für Elek trolytkondensatoren eingesetzt. Als vorteilhafte Rauhstruktur hat sich bei Hochvolt-Anodenfolien die sogenannte Langtunnel struktur erwiesen. Hierbei werden hohe Aufrauhgrade mit ther misch behandelten (geglühten) Aluminiumfolien der Reinheit 99,99% mit einem hohen Anteil kubischer Textur (≧ 80% bei 100 µm Folien) erreicht.Such methods are used to increase volume capacity in the production of roughened aluminum foils for elec trolytic capacitors used. As an advantageous rough structure has the so-called long tunnel for high-voltage anode foils proven structure. Here, high degrees of roughening with ther mixed treated (annealed) aluminum foils of purity 99.99% with a high proportion of cubic texture (≧ 80% at 100 µm foils) reached.
Die Ätzung erfolgt meist in mehreren Stufen in chloridhaltigen Ätzelektrolyten. Bei manchen Verfahren hat es sich als vorteil haft erwiesen, die Folienoberfläche in einer ersten Stufe in HCl- oder AlCl3-Elektrolyten chemisch vorzuätzen. Anschließend folgt in einer oder zwei Stufen die eigentliche elektrolytische Tunnelätzung in chloridhaltigen Elektrolyten. Das Aufweiten der gebildeten Tunnel auf den optimalen Durchmesser erfolgt elektro lytisch in chloridhaltigen Elektrolyten oder chemisch in z. B. HNO3-Lösungen. Auch eine Kombination beider Erweiterungsver fahren ist bekannt.The etching usually takes place in several stages in chloride-containing etching electrolytes. In some processes, it has proven to be advantageous to chemically pre-etch the film surface in a first stage in HCl or AlCl 3 electrolytes. The actual electrolytic tunnel etching in chloride-containing electrolytes then follows in one or two stages. The widening of the tunnels formed to the optimal diameter is carried out electrolytically in chloride-containing electrolytes or chemically in z. B. ENT 3 solutions. A combination of both expansion processes is known.
Beim Prozeß der Hochvolt-Langtunnelätzung starten die Ätztunnel ausgehend von Ätzkeimen in der Folienoberfläche.The etching tunnels start during the high-voltage long tunnel etching process based on etching germs in the film surface.
Aufgabe der Erfindung ist es, durch eine geeignete Vorbehandlung der Oberfläche der geglühten Folie die Atzkeime zu beeinflussen und damit eine höhere Anzahl und eine gleichmäßigere Verteilung der Ätztunnel zu erreichen, so daß eine möglichst hohe Auf rauhung der Aluminiumfolie erreicht wird.The object of the invention is by a suitable pretreatment to influence the etching seeds on the surface of the annealed foil and thus a higher number and a more even distribution to reach the etching tunnel, so that the highest possible roughening of the aluminum foil is achieved.
Diese Aufgabe wird erfindungsgemäß dadurch gelöst, daß die Fo lien vor dem Aufrauhen in einem wäßrigen, halogenidfreien Bad als Anode geschaltet elektrolytisch vorbehandelt werden.This object is achieved in that the Fo before roughening in an aqueous, halide-free bath can be electrolytically pretreated as an anode.
Zweckmäßigerweise geschieht dies in einem Bad mit einer Leit fähigkeit von 1 µS/cm bis 50 mS/cm, wobei bevorzugterweise Lösungen von SiO2 und/oder H3PO4 in entionisiertem Wasser ver wendet werden.This is expediently done in a bath with a conductivity of 1 μS / cm to 50 mS / cm, preferably using solutions of SiO 2 and / or H 3 PO 4 in deionized water.
Bei Verwendung eines Bades, das H3PO4 enthält, ist es zweck mäßig bei Konzentration von 0,1 bis 5 mmol/l zu behandeln.When using a bath containing H 3 PO 4 , it is advisable to treat at a concentration of 0.1 to 5 mmol / l.
Die Temperatur des Bades beträgt zwischen 20 und 85°C bei einer Behandlungsdauer von 5 bis 60 Sekunden.The temperature of the bath is between 20 and 85 ° C at one Treatment duration from 5 to 60 seconds.
Spannung und Strom bei der elektrolytischen Vorbehandlung werden derart eingestellt, daß sich ein Ladungsumsatz von 0,1 bis 8 mAs je cm2 Folienoberfläche ergibt.Voltage and current in the electrolytic pretreatment are set in such a way that a charge conversion of 0.1 to 8 mAs per cm 2 of film surface results.
Die vorbehandelten Folien können in einem Chloridionen enthal tenden Bad elektrolytisch aufgerauht werden, wobei zweckmäßiger weise in einer ersten Atzstufe zur Tunnelätzung eine Lösung von HCl und AlCl3 verwendet wird.The pretreated foils can be electrolytically roughened in a bath containing chloride ions, a solution of HCl and AlCl 3 being expediently used in a first etching step for tunnel etching.
Bevorzugterweise sollte der HCl-Ätzelektrolyt entionisiertes Wasser als Lösungsmittel enthalten, da das Verfahren empfindlich auf Verunreinigungen im Wasser reagiert.The HCl etching electrolyte should preferably be deionized Contain water as a solvent because the process is sensitive reacts to impurities in the water.
Zur Erläuterung des Gegenstandes der Erfindung dienen die fol genden Ausführungsbeispiele.The fol ing embodiments.
Als Ausgangsmaterial wurde von zwei verschiedenen Herstellern A und B Aluminiumfolie der Reinheit 99,99% entfettet und geglüht. Die Vorbehandlung erfolgte in 0,002 M H3PO4 bei 60°C mit einer angelegten Spannung von 1,9 V während einer Zeit von 30 Sekunden. The starting material was degreased and annealed from 99.99% pure aluminum foil by two different manufacturers A and B. The pretreatment was carried out in 0.002 MH 3 PO 4 at 60 ° C with an applied voltage of 1.9 V for a period of 30 seconds.
Die Tunnelätzung in einer Lösung von HCl/AlCl3 in entionisiertem Wasser bei 80°C wurde während 35 Sekunden mit einer Stromdichte von 1800 A/m2 durchgeführt, und die Tunnelerweiterungsätzung er folgte in chloridhaltigem Elektrolyt. Der elektrische Gesamtla dungsumsatz betrug 7,4×105 As je m2 Folie.The tunnel etching in a solution of HCl / AlCl 3 in deionized water at 80 ° C was carried out for 35 seconds with a current density of 1800 A / m 2 , and the tunnel expansion etching was carried out in chloride-containing electrolyte. The total electrical charge conversion was 7.4 × 10 5 As per m 2 of film.
Vergleichsweise wurden Rohfolien nach dem zuvor beschriebenen Standard-Ätzverfahren geätzt, ohne die anodische Vorbehandlung gemäß der Erfindung vorzunehmen.Comparatively, raw foils were made after the one previously described Standard etching process without the anodic pretreatment to make according to the invention.
In der folgenden Tabelle sind die nach herkömmlicher Spülung und Formierung auf 400 V an den derart hergestellten Aluminium anodenfolien gemessenen spezifischen Kapazitäten dargestellt.The following table shows those after conventional rinsing and formation to 400 V on the aluminum thus produced specific capacities measured.
Der Tabelle ist zu entnehmen, daß durch das Verfahren mit anodischer Vorbehandlung eine Kapazitätssteigerung im Ver gleich zum Standard-Ätzverfahren von 11 bis 22% erhalten wird. Auch mit Rohfolie vom Hersteller A, mit der nach dem Standard- HCl-Ätzverfahren nur eine relativ geringe Aufrauhung erzielt wurde, wird mit dem Verfahren nach der Erfindung die annähernd gleiche Aufrauhung wie mit Rohfolie vom Hersteller B erreicht.The table shows that the procedure with anodic pretreatment an increase in capacity in Ver 11 to 22% is obtained directly from the standard etching process. Also with raw film from manufacturer A, with the according to the standard HCl etching process only achieved a relatively small roughening was, with the method according to the invention is approximately same roughening as achieved with raw film from manufacturer B.
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19893917425 DE3917425A1 (en) | 1989-05-29 | 1989-05-29 | Prodn. of roughened capacitor foil - involving electrolytic pretreatment before foil roughening |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19893917425 DE3917425A1 (en) | 1989-05-29 | 1989-05-29 | Prodn. of roughened capacitor foil - involving electrolytic pretreatment before foil roughening |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3917425A1 true DE3917425A1 (en) | 1990-12-06 |
DE3917425C2 DE3917425C2 (en) | 1993-07-01 |
Family
ID=6381589
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19893917425 Granted DE3917425A1 (en) | 1989-05-29 | 1989-05-29 | Prodn. of roughened capacitor foil - involving electrolytic pretreatment before foil roughening |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE3917425A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4232636A1 (en) * | 1992-09-29 | 1994-03-31 | Siemens Ag | Roughening of surface of aluminium@ foil - in which etching tunnels are formed |
EP0665310A1 (en) * | 1994-01-26 | 1995-08-02 | KDK Corporation | Method of etching metal foil |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3127161A1 (en) * | 1981-07-09 | 1983-01-20 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR PRODUCING AN ELECTRODE FILM, IN PARTICULAR LOW-VOLTAGE ELECTROLYTE CAPACITORS |
DE3619890A1 (en) * | 1986-06-13 | 1987-12-17 | Siemens Ag | Process for producing anode foils for electrolyte capacitors from aluminium |
-
1989
- 1989-05-29 DE DE19893917425 patent/DE3917425A1/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3127161A1 (en) * | 1981-07-09 | 1983-01-20 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR PRODUCING AN ELECTRODE FILM, IN PARTICULAR LOW-VOLTAGE ELECTROLYTE CAPACITORS |
DE3619890A1 (en) * | 1986-06-13 | 1987-12-17 | Siemens Ag | Process for producing anode foils for electrolyte capacitors from aluminium |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4232636A1 (en) * | 1992-09-29 | 1994-03-31 | Siemens Ag | Roughening of surface of aluminium@ foil - in which etching tunnels are formed |
EP0665310A1 (en) * | 1994-01-26 | 1995-08-02 | KDK Corporation | Method of etching metal foil |
Also Published As
Publication number | Publication date |
---|---|
DE3917425C2 (en) | 1993-07-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8120 | Willingness to grant licenses paragraph 23 | ||
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: EPCOS AG, 81541 MUENCHEN, DE |
|
8339 | Ceased/non-payment of the annual fee |