DE3884036T2 - Thyristor des Überspannungsselbstschutztyps. - Google Patents

Thyristor des Überspannungsselbstschutztyps.

Info

Publication number
DE3884036T2
DE3884036T2 DE88106048T DE3884036T DE3884036T2 DE 3884036 T2 DE3884036 T2 DE 3884036T2 DE 88106048 T DE88106048 T DE 88106048T DE 3884036 T DE3884036 T DE 3884036T DE 3884036 T2 DE3884036 T2 DE 3884036T2
Authority
DE
Germany
Prior art keywords
overvoltage protection
protection type
type thyristor
thyristor
overvoltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88106048T
Other languages
English (en)
Other versions
DE3884036D1 (de
Inventor
Kazuyoshi Kanda
Katsumi Akabane
Tadashi Sakaue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3884036D1 publication Critical patent/DE3884036D1/de
Application granted granted Critical
Publication of DE3884036T2 publication Critical patent/DE3884036T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Thyristors (AREA)
DE88106048T 1987-04-17 1988-04-15 Thyristor des Überspannungsselbstschutztyps. Expired - Fee Related DE3884036T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62093072A JPS63260078A (ja) 1987-04-17 1987-04-17 過電圧自己保護型サイリスタ

Publications (2)

Publication Number Publication Date
DE3884036D1 DE3884036D1 (de) 1993-10-21
DE3884036T2 true DE3884036T2 (de) 1994-04-07

Family

ID=14072308

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88106048T Expired - Fee Related DE3884036T2 (de) 1987-04-17 1988-04-15 Thyristor des Überspannungsselbstschutztyps.

Country Status (4)

Country Link
US (1) US5003369A (de)
EP (1) EP0287114B1 (de)
JP (1) JPS63260078A (de)
DE (1) DE3884036T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5243205A (en) * 1989-10-16 1993-09-07 Kabushiki Kaisha Toshiba Semiconductor device with overvoltage protective function
JP3155797B2 (ja) * 1991-12-26 2001-04-16 株式会社日立製作所 過電圧自己保護型半導体装置、及び、それを使用した半導体回路
DE19826022C1 (de) * 1998-06-10 1999-06-17 Siemens Ag Vorrichtung und Verfahren zur Ansteuerung von Thyristoren
US6917727B2 (en) 2001-09-10 2005-07-12 California Institute Of Technology Strip loaded waveguide integrated with electronics components
JP5446103B2 (ja) * 2008-03-07 2014-03-19 サンケン電気株式会社 双方向サイリスタ
US9633998B2 (en) * 2012-09-13 2017-04-25 General Electric Company Semiconductor device and method for making the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH567803A5 (de) * 1974-01-18 1975-10-15 Bbc Brown Boveri & Cie
CH594984A5 (de) * 1976-06-02 1978-01-31 Bbc Brown Boveri & Cie
DE2951916A1 (de) * 1979-12-21 1981-07-02 Siemens AG, 1000 Berlin und 8000 München Lichtsteuerbarer thyristor
DE3369234D1 (en) * 1982-11-15 1987-02-19 Toshiba Kk Thyristor device protected from an overvoltage
US4514898A (en) * 1983-02-18 1985-05-07 Westinghouse Electric Corp. Method of making a self protected thyristor
US4516315A (en) * 1983-05-09 1985-05-14 Westinghouse Electric Corp. Method of making a self-protected thyristor
DE3465222D1 (en) * 1983-05-26 1987-09-10 Gen Electric Voltage breakover protected thyristor having field-containing layer in avalanche voltage breakover zone
EP0178387B1 (de) * 1984-10-19 1992-10-07 BBC Brown Boveri AG Abschaltbares Leistungshalbleiterbauelement

Also Published As

Publication number Publication date
JPS63260078A (ja) 1988-10-27
EP0287114B1 (de) 1993-09-15
EP0287114A1 (de) 1988-10-19
DE3884036D1 (de) 1993-10-21
JPH0581192B2 (de) 1993-11-11
US5003369A (en) 1991-03-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee