DE3881525T2 - Züchtung von halbleiter-einkristallen. - Google Patents

Züchtung von halbleiter-einkristallen.

Info

Publication number
DE3881525T2
DE3881525T2 DE88905927T DE3881525T DE3881525T2 DE 3881525 T2 DE3881525 T2 DE 3881525T2 DE 88905927 T DE88905927 T DE 88905927T DE 3881525 T DE3881525 T DE 3881525T DE 3881525 T2 DE3881525 T2 DE 3881525T2
Authority
DE
Germany
Prior art keywords
breeding
single crystals
semiconductor single
semiconductor
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88905927T
Other languages
English (en)
Other versions
DE3881525D1 (de
Inventor
Donald Thomas James Hurle
Gordon Charles Joyce
Kathryn Elizabeth Mckell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BTG International Ltd
Original Assignee
British Technology Group Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Technology Group Ltd filed Critical British Technology Group Ltd
Publication of DE3881525D1 publication Critical patent/DE3881525D1/de
Application granted granted Critical
Publication of DE3881525T2 publication Critical patent/DE3881525T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/28—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE88905927T 1987-06-30 1988-06-27 Züchtung von halbleiter-einkristallen. Expired - Fee Related DE3881525T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB878715327A GB8715327D0 (en) 1987-06-30 1987-06-30 Growth of semiconductor singel crystals

Publications (2)

Publication Number Publication Date
DE3881525D1 DE3881525D1 (de) 1993-07-08
DE3881525T2 true DE3881525T2 (de) 1993-10-28

Family

ID=10619816

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88905927T Expired - Fee Related DE3881525T2 (de) 1987-06-30 1988-06-27 Züchtung von halbleiter-einkristallen.

Country Status (6)

Country Link
US (1) US6294017B1 (de)
EP (1) EP0366698B1 (de)
JP (1) JP2614298B2 (de)
DE (1) DE3881525T2 (de)
GB (2) GB8715327D0 (de)
WO (1) WO1989000211A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4209082B2 (ja) * 2000-06-20 2009-01-14 コバレントマテリアル株式会社 単結晶引上げ装置および引上げ方法
US20050146671A1 (en) * 2003-12-24 2005-07-07 Khavrounyak Igor V. Method of manufacturing thin crystal films
JP4701738B2 (ja) * 2005-02-17 2011-06-15 株式会社Ｓｕｍｃｏ 単結晶の引上げ方法
KR100700082B1 (ko) * 2005-06-14 2007-03-28 주식회사 실트론 결정 성장된 잉곳의 품질평가 방법
RU2549411C2 (ru) * 2013-04-11 2015-04-27 Общество с ограниченной ответственностью "СИЭМЭЛ" Способ регулирования площади поперечного сечения кристалла в процессе его выращивания вытягиванием из расплава
CN112831830B (zh) * 2020-12-31 2022-05-10 徐州晶睿半导体装备科技有限公司 用于晶体生长设备的坩埚升降机构和晶体生长设备

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2908004A (en) * 1957-05-10 1959-10-06 Levinson John Temperature control for crystal pulling
US3013721A (en) * 1959-08-18 1961-12-19 Industrial Nucleonics Corp Automatic control system
DE1816068B2 (de) * 1967-12-21 1971-06-03 Selbstoptimierendes regelsystem vorzugsweise zur optimie rung des wirkungsgrades von produktions oder kraftmaschinen anlagen
US3621213A (en) * 1969-11-26 1971-11-16 Ibm Programmed digital-computer-controlled system for automatic growth of semiconductor crystals
US3761692A (en) * 1971-10-01 1973-09-25 Texas Instruments Inc Automated crystal pulling system
GB1434527A (en) * 1972-09-08 1976-05-05 Secr Defence Growth of crystalline material
GB1465191A (en) * 1974-03-29 1977-02-23 Nat Res Dev Automatically controlled crystal growth
GB1494342A (en) * 1974-04-03 1977-12-07 Nat Res Dev Automatic control of crystal growth
US3980438A (en) * 1975-08-28 1976-09-14 Arthur D. Little, Inc. Apparatus for forming semiconductor crystals of essentially uniform diameter
JPS57123892A (en) * 1981-01-17 1982-08-02 Toshiba Corp Preparation and apparatus of single crystal
EP0097676A4 (de) 1982-01-04 1985-11-11 Commw Of Australia Steuerung des diameters im czochralski-kristallwachstum.
JPS6020360B2 (ja) 1982-02-17 1985-05-21 住友金属鉱山株式会社 単結晶の製造方法
JPS58145694A (ja) 1982-02-22 1983-08-30 Toshiba Corp 化合物半導体の製造方法
JPS58145693A (ja) 1982-02-22 1983-08-30 Toshiba Corp 単結晶製造方法
JPS59102896A (ja) * 1982-11-30 1984-06-14 Toshiba Corp 単結晶の形状制御方法
JPS59184796A (ja) * 1983-04-04 1984-10-20 Agency Of Ind Science & Technol ３−５族化合物半導体単結晶の製造方法
JPS59184797A (ja) * 1983-04-04 1984-10-20 Agency Of Ind Science & Technol ３−５族化合物半導体単結晶の製造方法
GB2140704B (en) * 1983-04-04 1986-05-14 Agency Ind Science Techn Control of crystal pulling
FR2553793B1 (fr) * 1983-10-19 1986-02-14 Crismatec Procede de commande d'une machine de tirage de monocristaux
JPS60226492A (ja) * 1984-04-23 1985-11-11 Toshiba Corp 化合物半導体単結晶の製造装置
US4857278A (en) * 1987-07-13 1989-08-15 Massachusetts Institute Of Technology Control system for the czochralski process

Also Published As

Publication number Publication date
DE3881525D1 (de) 1993-07-08
EP0366698B1 (de) 1993-06-02
JPH04504838A (ja) 1992-08-27
GB8715327D0 (en) 1987-08-05
JP2614298B2 (ja) 1997-05-28
WO1989000211A1 (en) 1989-01-12
GB2206424A (en) 1989-01-05
EP0366698A1 (de) 1990-05-09
US6294017B1 (en) 2001-09-25
GB8815266D0 (en) 1988-08-03
GB2206424B (en) 1991-07-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee