DE3880029T2 - Verfahren zum Entfernen von Teilen aus Siliciumnitrid oder Siliciumoxynitrid. - Google Patents
Verfahren zum Entfernen von Teilen aus Siliciumnitrid oder Siliciumoxynitrid.Info
- Publication number
- DE3880029T2 DE3880029T2 DE88420222T DE3880029T DE3880029T2 DE 3880029 T2 DE3880029 T2 DE 3880029T2 DE 88420222 T DE88420222 T DE 88420222T DE 3880029 T DE3880029 T DE 3880029T DE 3880029 T2 DE3880029 T2 DE 3880029T2
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- removing parts
- silicon nitride
- silicon oxynitride
- oxynitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Formation Of Insulating Films (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8709174A FR2617333B1 (fr) | 1987-06-25 | 1987-06-25 | Procede d'elimination de zones de nitrure ou d'oxynitrure de silicium |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3880029D1 DE3880029D1 (de) | 1993-05-13 |
DE3880029T2 true DE3880029T2 (de) | 1993-10-21 |
Family
ID=9352651
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE88420222T Expired - Fee Related DE3880029T2 (de) | 1987-06-25 | 1988-06-24 | Verfahren zum Entfernen von Teilen aus Siliciumnitrid oder Siliciumoxynitrid. |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0298879B1 (de) |
DE (1) | DE3880029T2 (de) |
FR (1) | FR2617333B1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01274457A (ja) * | 1988-04-26 | 1989-11-02 | Seiko Instr Inc | 半導体装置の製造方法 |
US7977249B1 (en) * | 2007-03-07 | 2011-07-12 | Novellus Systems, Inc. | Methods for removing silicon nitride and other materials during fabrication of contacts |
US8187486B1 (en) | 2007-12-13 | 2012-05-29 | Novellus Systems, Inc. | Modulating etch selectivity and etch rate of silicon nitride thin films |
US9431268B2 (en) | 2015-01-05 | 2016-08-30 | Lam Research Corporation | Isotropic atomic layer etch for silicon and germanium oxides |
US9425041B2 (en) | 2015-01-06 | 2016-08-23 | Lam Research Corporation | Isotropic atomic layer etch for silicon oxides using no activation |
WO2019226341A1 (en) | 2018-05-25 | 2019-11-28 | Lam Research Corporation | Thermal atomic layer etch with rapid temperature cycling |
EP3821457A4 (de) | 2018-07-09 | 2022-04-13 | Lam Research Corporation | Ätzen von atomschichtätzen mittels elektronenanregung |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2555360B1 (fr) * | 1983-11-17 | 1986-10-10 | Berenguer Marc | Dispositif pour la realisation de couches dielectriques minces a la surface de corps solides |
-
1987
- 1987-06-25 FR FR8709174A patent/FR2617333B1/fr not_active Expired - Lifetime
-
1988
- 1988-06-24 DE DE88420222T patent/DE3880029T2/de not_active Expired - Fee Related
- 1988-06-24 EP EP88420222A patent/EP0298879B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0298879A1 (de) | 1989-01-11 |
DE3880029D1 (de) | 1993-05-13 |
FR2617333A1 (fr) | 1988-12-30 |
EP0298879B1 (de) | 1993-04-07 |
FR2617333B1 (fr) | 1990-01-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3887812T2 (de) | Verfahren zum Entfernen von Pyrogenen. | |
DE69020802T2 (de) | Verfahren zum Ausheilen von Halbleitern. | |
DE3889849T2 (de) | Verfahren zum bevorzugten Ätzen von polykristallinem Silicium. | |
DE3751333T2 (de) | Verfahren zum Entfernen von Photoresists auf Halbleitersubstraten. | |
DE3485800T2 (de) | Verfahren zur behandlung grosser objekte. | |
DE3882862D1 (de) | Verfahren zum extrahieren von atp. | |
DE3854561D1 (de) | Verfahren zum Trockenätzen. | |
DE3765596D1 (de) | Verfahren zum sprengplattieren. | |
DE59106977D1 (de) | Verfahren zum Bearbeiten von Tiefdruckformen. | |
DE69020200D1 (de) | Verfahren zum Entfernen von Titannitrid. | |
DE3779169D1 (de) | Verfahren zum entfernen von verunreinigenden stoffen aus bohrungen. | |
DE69015841T2 (de) | Verfahren zum Entfernen von Zwiebelgewächswurzeln. | |
DE3764026D1 (de) | Verfahren zum aufbereiten von gebrauchten primaerzellen. | |
DE3861527D1 (de) | Verfahren zur behandlung von photolacken. | |
DE3880029T2 (de) | Verfahren zum Entfernen von Teilen aus Siliciumnitrid oder Siliciumoxynitrid. | |
DE3382683T2 (de) | Verfahren zum Umschmelzen von Polyamiden. | |
DE3885135D1 (de) | Verfahren zum Entfernen von Sägehilfsmittelresten von Scheiben. | |
DE3771679D1 (de) | Verfahren zum rueckgewinnen von galliumtrichlorid aus gallium enthaltenden abfallstoffen. | |
DE3778163D1 (de) | Verfahren zum trennen fluessiger gemische. | |
DE3775853D1 (de) | Verfahren zur behandlung von kontaktlinsen. | |
DE69221453D1 (de) | Verfahren zum Extrahieren von Endotoxinen | |
DE69013065T2 (de) | Verfahren zum Polieren von Halbleiterplättchen. | |
DE69001099D1 (de) | Verfahren zum entfernen von mercaptanen. | |
DE3778327D1 (de) | Verfahren zum verkleben. | |
DE3889830D1 (de) | Verfahren zum Ätzen von (100) Silizium. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |