DE3877456D1 - In vertikaler integrationstechnologie hergestellter integrierter monolitischer regulator des induktionsanregungsstromes eines wechselstromgenerators mittels einer wiederdurchflussdiode. - Google Patents
In vertikaler integrationstechnologie hergestellter integrierter monolitischer regulator des induktionsanregungsstromes eines wechselstromgenerators mittels einer wiederdurchflussdiode.Info
- Publication number
- DE3877456D1 DE3877456D1 DE8888402025T DE3877456T DE3877456D1 DE 3877456 D1 DE3877456 D1 DE 3877456D1 DE 8888402025 T DE8888402025 T DE 8888402025T DE 3877456 T DE3877456 T DE 3877456T DE 3877456 D1 DE3877456 D1 DE 3877456D1
- Authority
- DE
- Germany
- Prior art keywords
- monolitical
- regulator
- generator
- excitation current
- integration technology
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005284 excitation Effects 0.000 title 1
- 230000006698 induction Effects 0.000 title 1
- 230000010354 integration Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/14—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries for charging batteries from dynamo-electric generators driven at varying speed, e.g. on vehicle
- H02J7/16—Regulation of the charging current or voltage by variation of field
- H02J7/24—Regulation of the charging current or voltage by variation of field using discharge tubes or semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dc-Dc Converters (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Control Of Charge By Means Of Generators (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8711133A FR2619249B1 (fr) | 1987-08-05 | 1987-08-05 | Regulateur monolithique du courant d'excitation de l'inducteur d'un alternateur a diode de recirculation integree en technologie d'integration verticale |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3877456D1 true DE3877456D1 (de) | 1993-02-25 |
DE3877456T2 DE3877456T2 (de) | 1993-05-13 |
Family
ID=9353916
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888402025T Expired - Fee Related DE3877456T2 (de) | 1987-08-05 | 1988-08-03 | In vertikaler integrationstechnologie hergestellter integrierter monolitischer regulator des induktionsanregungsstromes eines wechselstromgenerators mittels einer wiederdurchflussdiode. |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0302789B1 (de) |
DE (1) | DE3877456T2 (de) |
FR (1) | FR2619249B1 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4146607B2 (ja) * | 2000-07-28 | 2008-09-10 | 三菱電機株式会社 | パワーモジュール |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2026778C3 (de) * | 1970-06-01 | 1978-12-21 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Halbleitervierschichtdiode |
DE2601140A1 (de) * | 1976-01-14 | 1977-07-21 | Pal Magneton N P | Elektronischer spannungs-regler elektrischer generatoren |
US4636705A (en) * | 1986-01-13 | 1987-01-13 | General Motors Corporation | Switching circuit utilizing a field effect transistor |
-
1987
- 1987-08-05 FR FR8711133A patent/FR2619249B1/fr not_active Expired
-
1988
- 1988-08-03 DE DE8888402025T patent/DE3877456T2/de not_active Expired - Fee Related
- 1988-08-03 EP EP88402025A patent/EP0302789B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0302789A1 (de) | 1989-02-08 |
FR2619249B1 (fr) | 1989-12-22 |
EP0302789B1 (de) | 1993-01-13 |
DE3877456T2 (de) | 1993-05-13 |
FR2619249A1 (fr) | 1989-02-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |