DE3874582T2 - Verfahren zum angreifen der oberflaeche eines gegenstandes aus indium-phosphid. - Google Patents

Verfahren zum angreifen der oberflaeche eines gegenstandes aus indium-phosphid.

Info

Publication number
DE3874582T2
DE3874582T2 DE8888104981T DE3874582T DE3874582T2 DE 3874582 T2 DE3874582 T2 DE 3874582T2 DE 8888104981 T DE8888104981 T DE 8888104981T DE 3874582 T DE3874582 T DE 3874582T DE 3874582 T2 DE3874582 T2 DE 3874582T2
Authority
DE
Germany
Prior art keywords
attacking
indium phosphide
phosphide
indium
phosphide object
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888104981T
Other languages
English (en)
Other versions
DE3874582D1 (de
Inventor
Claude Carriere
Jean Renard
Thierry Lavolee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel CIT SA
Original Assignee
Alcatel CIT SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel CIT SA filed Critical Alcatel CIT SA
Application granted granted Critical
Publication of DE3874582D1 publication Critical patent/DE3874582D1/de
Publication of DE3874582T2 publication Critical patent/DE3874582T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
DE8888104981T 1987-04-01 1988-03-28 Verfahren zum angreifen der oberflaeche eines gegenstandes aus indium-phosphid. Expired - Fee Related DE3874582T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8704575A FR2613381B1 (fr) 1987-04-01 1987-04-01 Procede d'attaque d'une surface d'une piece en phosphure d'indium

Publications (2)

Publication Number Publication Date
DE3874582D1 DE3874582D1 (de) 1992-10-22
DE3874582T2 true DE3874582T2 (de) 1993-04-01

Family

ID=9349674

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888104981T Expired - Fee Related DE3874582T2 (de) 1987-04-01 1988-03-28 Verfahren zum angreifen der oberflaeche eines gegenstandes aus indium-phosphid.

Country Status (6)

Country Link
US (1) US4861423A (de)
EP (1) EP0285066B1 (de)
JP (1) JPS63262483A (de)
CA (1) CA1283885C (de)
DE (1) DE3874582T2 (de)
FR (1) FR2613381B1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2633451B1 (fr) * 1988-06-24 1990-10-05 Labo Electronique Physique Procede de realisation de dispositifs semiconducteurs incluant au moins une etape de gravure ionique reactive
DE3837487A1 (de) * 1988-11-04 1990-05-10 Leybold Ag Verfahren und vorrichtung zum aetzen von substraten mit einer magnetfeldunterstuetzten niederdruck-entladung
NL9500004A (nl) * 1995-01-02 1996-08-01 Nederland Ptt Geintegreerd optische golflengte-demultiplexer.
CN107723802A (zh) * 2017-11-10 2018-02-23 北京鼎泰芯源科技发展有限公司 一种磷化铟单晶片的腐蚀方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4326911A (en) * 1980-01-29 1982-04-27 Bell Telephone Laboratories, Incorporated Reactive ion etching of III-V compounds including InP, GaAs-InP and GaAlAs
JPS5749234A (en) * 1980-09-08 1982-03-23 Semiconductor Energy Lab Co Ltd Plasma etching method
US4749440A (en) * 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
US4671847A (en) * 1985-11-18 1987-06-09 The United States Of America As Represented By The Secretary Of The Navy Thermally-activated vapor etchant for InP
US4705760A (en) * 1986-01-16 1987-11-10 Rca Corporation Preparation of a surface for deposition of a passinating layer
US4714518A (en) * 1987-01-14 1987-12-22 Polaroid Corporation Dual layer encapsulation coating for III-V semiconductor compounds

Also Published As

Publication number Publication date
FR2613381A1 (fr) 1988-10-07
FR2613381B1 (fr) 1989-06-23
CA1283885C (fr) 1991-05-07
US4861423A (en) 1989-08-29
DE3874582D1 (de) 1992-10-22
EP0285066B1 (de) 1992-09-16
EP0285066A1 (de) 1988-10-05
JPS63262483A (ja) 1988-10-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee