DE3873373D1 - Schaltkreis zur erzeugung von referenzspannungen fuer halbleitervorrichtung. - Google Patents

Schaltkreis zur erzeugung von referenzspannungen fuer halbleitervorrichtung.

Info

Publication number
DE3873373D1
DE3873373D1 DE8888102448T DE3873373T DE3873373D1 DE 3873373 D1 DE3873373 D1 DE 3873373D1 DE 8888102448 T DE8888102448 T DE 8888102448T DE 3873373 T DE3873373 T DE 3873373T DE 3873373 D1 DE3873373 D1 DE 3873373D1
Authority
DE
Germany
Prior art keywords
circuit
semiconductor device
reference voltage
generate reference
generate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888102448T
Other languages
English (en)
Other versions
DE3873373T2 (de
Inventor
Nobuaki C O Patent Div Ohtsuka
Sumio C O Patent Divisi Tanaka
Junichi C O Patent Di Miyamoto
Shigeru C O Patent Divi Atsumi
Keniti C O Patent Divi Imamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3873373D1 publication Critical patent/DE3873373D1/de
Publication of DE3873373T2 publication Critical patent/DE3873373T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H01L27/0285—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements bias arrangements for gate electrode of field effect transistors, e.g. RC networks, voltage partitioning circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
DE8888102448T 1987-02-20 1988-02-19 Schaltkreis zur erzeugung von referenzspannungen fuer halbleitervorrichtung. Expired - Fee Related DE3873373T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62035807A JPS63204598A (ja) 1987-02-20 1987-02-20 半導体記憶装置のレフアレンス電位発生回路

Publications (2)

Publication Number Publication Date
DE3873373D1 true DE3873373D1 (de) 1992-09-10
DE3873373T2 DE3873373T2 (de) 1993-01-07

Family

ID=12452200

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888102448T Expired - Fee Related DE3873373T2 (de) 1987-02-20 1988-02-19 Schaltkreis zur erzeugung von referenzspannungen fuer halbleitervorrichtung.

Country Status (4)

Country Link
EP (1) EP0279453B1 (de)
JP (1) JPS63204598A (de)
KR (1) KR910000651B1 (de)
DE (1) DE3873373T2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112310105B (zh) * 2020-10-30 2022-05-13 长江存储科技有限责任公司 半导体器件的制作方法及半导体器件

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3938108A (en) * 1975-02-03 1976-02-10 Intel Corporation Erasable programmable read-only memory
US4342102A (en) * 1980-06-18 1982-07-27 Signetics Corporation Semiconductor memory array
JPS59168992A (ja) * 1983-03-15 1984-09-22 Sanyo Electric Co Ltd 不揮発性メモリ及びそのアドレス方式
EP0136119B1 (de) * 1983-09-16 1988-06-29 Fujitsu Limited Festwertspeicherschaltung mit Multi-Bitzellen

Also Published As

Publication number Publication date
JPS63204598A (ja) 1988-08-24
KR880010419A (ko) 1988-10-08
KR910000651B1 (ko) 1991-01-31
EP0279453A1 (de) 1988-08-24
DE3873373T2 (de) 1993-01-07
EP0279453B1 (de) 1992-08-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee