DE3869181D1 - Bipolare transistorstruktur mit selbstausrichtender anordnung und isolation und ihr herstellungsverfahren. - Google Patents
Bipolare transistorstruktur mit selbstausrichtender anordnung und isolation und ihr herstellungsverfahren.Info
- Publication number
- DE3869181D1 DE3869181D1 DE8888103370T DE3869181T DE3869181D1 DE 3869181 D1 DE3869181 D1 DE 3869181D1 DE 8888103370 T DE8888103370 T DE 8888103370T DE 3869181 T DE3869181 T DE 3869181T DE 3869181 D1 DE3869181 D1 DE 3869181D1
- Authority
- DE
- Germany
- Prior art keywords
- insulation
- self
- production process
- bipolar transistor
- transistor structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000009413 insulation Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/011—Bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/037,916 US4738624A (en) | 1987-04-13 | 1987-04-13 | Bipolar transistor structure with self-aligned device and isolation and fabrication process therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3869181D1 true DE3869181D1 (de) | 1992-04-23 |
Family
ID=21897044
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888103370T Expired - Fee Related DE3869181D1 (de) | 1987-04-13 | 1988-03-04 | Bipolare transistorstruktur mit selbstausrichtender anordnung und isolation und ihr herstellungsverfahren. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4738624A (de) |
EP (1) | EP0288691B1 (de) |
JP (1) | JPH0622240B2 (de) |
DE (1) | DE3869181D1 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4985744A (en) * | 1988-01-29 | 1991-01-15 | Texas Instruments Incorporated | Method for forming a recessed contact bipolar transistor and field effect transistor |
US4897703A (en) * | 1988-01-29 | 1990-01-30 | Texas Instruments Incorporated | Recessed contact bipolar transistor and method |
US4957875A (en) * | 1988-08-01 | 1990-09-18 | International Business Machines Corporation | Vertical bipolar transistor |
US5144403A (en) * | 1989-02-07 | 1992-09-01 | Hewlett-Packard Company | Bipolar transistor with trench-isolated emitter |
JPH0812865B2 (ja) * | 1989-06-06 | 1996-02-07 | 株式会社東芝 | バイポーラトランジスタとその製造方法 |
JPH0812866B2 (ja) * | 1989-07-07 | 1996-02-07 | 株式会社東芝 | バイポーラ型半導体装置 |
US5008207A (en) * | 1989-09-11 | 1991-04-16 | International Business Machines Corporation | Method of fabricating a narrow base transistor |
US5132765A (en) * | 1989-09-11 | 1992-07-21 | Blouse Jeffrey L | Narrow base transistor and method of fabricating same |
US5268314A (en) * | 1990-01-16 | 1993-12-07 | Philips Electronics North America Corp. | Method of forming a self-aligned bipolar transistor |
US5387813A (en) * | 1992-09-25 | 1995-02-07 | National Semiconductor Corporation | Transistors with emitters having at least three sides |
JPH06132298A (ja) * | 1992-10-14 | 1994-05-13 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US5389553A (en) * | 1993-06-30 | 1995-02-14 | National Semiconductor Corporation | Methods for fabrication of transistors |
US5583059A (en) * | 1994-06-01 | 1996-12-10 | International Business Machines Corporation | Fabrication of vertical SiGe base HBT with lateral collector contact on thin SOI |
DE69527031T2 (de) * | 1994-12-22 | 2002-11-14 | Motorola Inc | Hochleistungs-, Hochspannungs-, nicht-epitaxialer Bipolartransistor |
JP3263299B2 (ja) * | 1995-12-04 | 2002-03-04 | 株式会社東芝 | 半導体装置およびその製造方法 |
US6894328B2 (en) * | 2002-08-13 | 2005-05-17 | Newport Fab, Llc | Self-aligned bipolar transistor having recessed spacers and method for fabricating same |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US104102A (en) * | 1870-06-14 | Improvement in elevating apparatus | ||
US4135954A (en) * | 1977-07-12 | 1979-01-23 | International Business Machines Corporation | Method for fabricating self-aligned semiconductor devices utilizing selectively etchable masking layers |
US4238278A (en) * | 1979-06-14 | 1980-12-09 | International Business Machines Corporation | Polycrystalline silicon oxidation method for making shallow and deep isolation trenches |
US4252582A (en) * | 1980-01-25 | 1981-02-24 | International Business Machines Corporation | Self aligned method for making bipolar transistor having minimum base to emitter contact spacing |
US4338138A (en) * | 1980-03-03 | 1982-07-06 | International Business Machines Corporation | Process for fabricating a bipolar transistor |
US4392149A (en) * | 1980-03-03 | 1983-07-05 | International Business Machines Corporation | Bipolar transistor |
US4378630A (en) * | 1980-05-05 | 1983-04-05 | International Business Machines Corporation | Process for fabricating a high performance PNP and NPN structure |
US4508579A (en) * | 1981-03-30 | 1985-04-02 | International Business Machines Corporation | Lateral device structures using self-aligned fabrication techniques |
US4333794A (en) * | 1981-04-07 | 1982-06-08 | International Business Machines Corporation | Omission of thick Si3 N4 layers in ISA schemes |
US4433470A (en) * | 1981-05-19 | 1984-02-28 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing semiconductor device utilizing selective etching and diffusion |
US4428111A (en) * | 1981-12-07 | 1984-01-31 | Bell Telephone Laboratories, Incorporated | Microwave transistor |
US4521952A (en) * | 1982-12-02 | 1985-06-11 | International Business Machines Corporation | Method of making integrated circuits using metal silicide contacts |
US4572765A (en) * | 1983-05-02 | 1986-02-25 | Fairchild Camera & Instrument Corporation | Method of fabricating integrated circuit structures using replica patterning |
US4593305A (en) * | 1983-05-17 | 1986-06-03 | Kabushiki Kaisha Toshiba | Heterostructure bipolar transistor |
US4617724A (en) * | 1983-06-30 | 1986-10-21 | Fujitsu Limited | Process for fabricating heterojunction bipolar transistor with low base resistance |
FR2549293B1 (fr) * | 1983-07-13 | 1986-10-10 | Silicium Semiconducteur Ssc | Transistor bipolaire haute frequence et son procede de fabrication |
GB2148593B (en) * | 1983-10-14 | 1987-06-10 | Hitachi Ltd | Process for manufacturing the isolating regions of a semiconductor integrated circuit device |
US4571817A (en) * | 1985-03-15 | 1986-02-25 | Motorola, Inc. | Method of making closely spaced contacts to PN-junction using stacked polysilicon layers, differential etching and ion implantations |
GB2179792B (en) * | 1985-08-28 | 1988-10-12 | Mitsubishi Electric Corp | Method for fabricating bipolar transistor in integrated circuit |
US4696097A (en) * | 1985-10-08 | 1987-09-29 | Motorola, Inc. | Poly-sidewall contact semiconductor device method |
-
1987
- 1987-04-13 US US07/037,916 patent/US4738624A/en not_active Expired - Fee Related
-
1988
- 1988-02-16 JP JP63032010A patent/JPH0622240B2/ja not_active Expired - Lifetime
- 1988-03-04 DE DE8888103370T patent/DE3869181D1/de not_active Expired - Fee Related
- 1988-03-04 EP EP88103370A patent/EP0288691B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS63263766A (ja) | 1988-10-31 |
JPH0622240B2 (ja) | 1994-03-23 |
EP0288691B1 (de) | 1992-03-18 |
EP0288691A1 (de) | 1988-11-02 |
US4738624A (en) | 1988-04-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |