DE3866444D1 - Verfahren zum verbinden eines leiters mit einem dotierten gebiet eines integrierten schaltungssubstrates mittels eines lasers und gemaess diesem verfahren hergestellte integrierte schaltung. - Google Patents

Verfahren zum verbinden eines leiters mit einem dotierten gebiet eines integrierten schaltungssubstrates mittels eines lasers und gemaess diesem verfahren hergestellte integrierte schaltung.

Info

Publication number
DE3866444D1
DE3866444D1 DE8888401625T DE3866444T DE3866444D1 DE 3866444 D1 DE3866444 D1 DE 3866444D1 DE 8888401625 T DE8888401625 T DE 8888401625T DE 3866444 T DE3866444 T DE 3866444T DE 3866444 D1 DE3866444 D1 DE 3866444D1
Authority
DE
Germany
Prior art keywords
integrated circuit
conductor
laser
doped area
circuit substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888401625T
Other languages
English (en)
Inventor
Alain Boudou
Marie-Francoise Bonnal
Martine Rouillon-Martin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bull SAS
Original Assignee
Bull SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bull SAS filed Critical Bull SAS
Application granted granted Critical
Publication of DE3866444D1 publication Critical patent/DE3866444D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
    • H01L21/76894—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern using a laser, e.g. laser cutting, laser direct writing, laser repair
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H01L23/5254—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE8888401625T 1987-07-02 1988-06-27 Verfahren zum verbinden eines leiters mit einem dotierten gebiet eines integrierten schaltungssubstrates mittels eines lasers und gemaess diesem verfahren hergestellte integrierte schaltung. Expired - Lifetime DE3866444D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8709383A FR2617638B1 (fr) 1987-07-02 1987-07-02 Procede de connexion par laser d'un conducteur a une region dopee du substrat d'un circuit integre, et circuit integre mettant en oeuvre le procede

Publications (1)

Publication Number Publication Date
DE3866444D1 true DE3866444D1 (de) 1992-01-09

Family

ID=9352795

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888401625T Expired - Lifetime DE3866444D1 (de) 1987-07-02 1988-06-27 Verfahren zum verbinden eines leiters mit einem dotierten gebiet eines integrierten schaltungssubstrates mittels eines lasers und gemaess diesem verfahren hergestellte integrierte schaltung.

Country Status (5)

Country Link
EP (1) EP0297963B1 (de)
JP (1) JPH079942B2 (de)
DE (1) DE3866444D1 (de)
ES (1) ES2027398T3 (de)
FR (1) FR2617638B1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5281553A (en) * 1987-07-02 1994-01-25 Bull, S.A. Method for controlling the state of conduction of an MOS transistor of an integrated circuit
US5498850A (en) * 1992-09-11 1996-03-12 Philip Morris Incorporated Semiconductor electrical heater and method for making same
US5316803A (en) * 1992-12-10 1994-05-31 International Business Machines Corporation Method for forming electrical interconnections in laminated vias

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5797644A (en) * 1980-12-09 1982-06-17 Ricoh Co Ltd Wiring connection method of semiconductor device
JPS58182851A (ja) * 1982-04-21 1983-10-25 Mitsubishi Electric Corp 冗長回路接続用半導体装置
JPH0760853B2 (ja) * 1984-07-18 1995-06-28 テキサス インスツルメンツ インコ−ポレイテツド レ−ザ・ビ−ムでプログラムし得る半導体装置と半導体装置の製法

Also Published As

Publication number Publication date
EP0297963B1 (de) 1991-11-27
EP0297963A1 (de) 1989-01-04
JPS6489538A (en) 1989-04-04
FR2617638A1 (fr) 1989-01-06
FR2617638B1 (fr) 1989-10-27
JPH079942B2 (ja) 1995-02-01
ES2027398T3 (es) 1992-06-01

Similar Documents

Publication Publication Date Title
DE69002828D1 (de) Verfahren zum nachweis von elektrischen leitern.
DE3750169D1 (de) Verfahren zum Ebnen eines Halbleitersubstrates.
DE3582556D1 (de) Verfahren zum herstellen von kontakten fuer integrierte schaltungen.
DE68912783D1 (de) Verfahren zum induzieren einer überproduktion von lysin in pflanzen.
IT7825618A0 (it) Metodo ed apparecchio per produrre cablaggi elettrici.
ATE24816T1 (de) Verfahren zur kontaktierung der klebstoffseitigen elektrode eines elektrischen bauteiles.
DE3381509D1 (de) Verfahren zum herstellen von halbleiteranordnungen.
ATA817076A (de) Verfahren und vorrichtung zum flussmittellosen loeten
ATE64516T1 (de) Verfahren zur herstellung von miteinander verbundenen gedruckten schaltungen.
DE3778976D1 (de) Verfahren zum kalibrieren von reflexions-messgeraeten.
DE3668111D1 (de) Verfahren zur herstellung ebener elektrischer schaltungen.
DE3382563D1 (de) Verfahren zum unterscheiden zwischen komplexen zeichenvorraeten.
DE69009259D1 (de) Verfahren zum Zusammensetzen von Halbleiteranordnungen.
DE3865426D1 (de) Verfahren zum verbinden einer leitenden schicht mit einer elektrodenstruktur.
DE3671583D1 (de) Verfahren zum herstellen eines halbleiter-speicherbauelementes.
DE68918306D1 (de) Verfahren zum Herstellen einer integrierten optoelektronischen Schaltung.
DE3673850D1 (de) Verfahren zum loeten von verbindungssteckerstiften an metallischen kontaktflecken.
DE68917695D1 (de) Verfahren zum Herstellen von Leiterbahnen innerhalb eines isolierenden Substrates Isolierendensubstrat.
DE3680190D1 (de) Verfahren zur herstellung von halbleiterlasern.
DE3866444D1 (de) Verfahren zum verbinden eines leiters mit einem dotierten gebiet eines integrierten schaltungssubstrates mittels eines lasers und gemaess diesem verfahren hergestellte integrierte schaltung.
DE3581276D1 (de) Verfahren zum herstellen von halbleiterbauelementen unter verwendung eines dual-peak-laserstrahls.
DE3685279D1 (de) Verfahren zur waermebehandlung eines verbindungshalbleitersubstrats.
DE3774687D1 (de) Verfahren zum vermehren von zwiebelpflanzen.
DE3784989D1 (de) Verfahren und vorrichtung zum pruefen der oberflaeche von halbleiterwafern mittels laserabtastung.
ATA120788A (de) Verfahren zum herstellen von elektrisch leitfähigen polymer-metallverbindungen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee