DE3856186D1 - Verfahren zur Herstellung von Kristallen auf einem Lichtdurchlässigen Substrat - Google Patents
Verfahren zur Herstellung von Kristallen auf einem Lichtdurchlässigen SubstratInfo
- Publication number
- DE3856186D1 DE3856186D1 DE3856186T DE3856186T DE3856186D1 DE 3856186 D1 DE3856186 D1 DE 3856186D1 DE 3856186 T DE3856186 T DE 3856186T DE 3856186 T DE3856186 T DE 3856186T DE 3856186 D1 DE3856186 D1 DE 3856186D1
- Authority
- DE
- Germany
- Prior art keywords
- crystals
- production
- translucent substrate
- translucent
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metallurgy (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62047033A JP2651146B2 (ja) | 1987-03-02 | 1987-03-02 | 結晶の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3856186D1 true DE3856186D1 (de) | 1998-06-25 |
DE3856186T2 DE3856186T2 (de) | 1998-10-08 |
Family
ID=12763859
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3856186T Expired - Fee Related DE3856186T2 (de) | 1987-03-02 | 1988-02-26 | Verfahren zur Herstellung von Kristallen auf einem Lichtdurchlässigen Substrat |
Country Status (5)
Country | Link |
---|---|
US (1) | US5463975A (de) |
EP (1) | EP0289114B1 (de) |
JP (1) | JP2651146B2 (de) |
CA (1) | CA1332342C (de) |
DE (1) | DE3856186T2 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0451789B1 (de) * | 1990-04-10 | 1996-01-10 | Canon Kabushiki Kaisha | Verfahren zur Herstellung einer Halbleiterdünnschicht |
JP4310076B2 (ja) * | 2001-05-31 | 2009-08-05 | キヤノン株式会社 | 結晶性薄膜の製造方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL260072A (de) * | 1960-01-15 | |||
US3620833A (en) * | 1966-12-23 | 1971-11-16 | Texas Instruments Inc | Integrated circuit fabrication |
US4059461A (en) * | 1975-12-10 | 1977-11-22 | Massachusetts Institute Of Technology | Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof |
US4180618A (en) * | 1977-07-27 | 1979-12-25 | Corning Glass Works | Thin silicon film electronic device |
JPS55160443A (en) * | 1979-05-22 | 1980-12-13 | Semiconductor Res Found | Manufacture of semiconductor integrated circuit device |
JPS6011453B2 (ja) * | 1979-05-23 | 1985-03-26 | 超エル・エス・アイ技術研究組合 | 半導体装置の製造方法 |
JPS5821818B2 (ja) * | 1979-08-31 | 1983-05-04 | 株式会社東芝 | 半導体単結晶膜の製造方法 |
JPS5821824B2 (ja) * | 1979-08-31 | 1983-05-04 | 株式会社東芝 | 半導体装置の製造方法 |
JPS57194517A (en) * | 1981-05-27 | 1982-11-30 | Toshiba Corp | Manufacture of semiconductor crystal film |
US4637127A (en) * | 1981-07-07 | 1987-01-20 | Nippon Electric Co., Ltd. | Method for manufacturing a semiconductor device |
EP0092405B1 (de) * | 1982-04-15 | 1986-07-23 | Matsushita Electric Industrial Co., Ltd. | Verfahren zur Herstellung von Kristallen |
US4522662A (en) * | 1983-08-12 | 1985-06-11 | Hewlett-Packard Company | CVD lateral epitaxial growth of silicon over insulators |
JPS60145629A (ja) * | 1984-01-10 | 1985-08-01 | Nec Corp | 熱処理法 |
US4585512A (en) * | 1984-01-27 | 1986-04-29 | Sony Corporation | Method for making seed crystals for single-crystal semiconductor devices |
JPS60224282A (ja) * | 1984-04-20 | 1985-11-08 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
US4592792A (en) * | 1985-01-23 | 1986-06-03 | Rca Corporation | Method for forming uniformly thick selective epitaxial silicon |
CA1330191C (en) * | 1986-03-31 | 1994-06-14 | Jinsho Matsuyama | Method for forming crystal and crystal article obtained by said method |
-
1987
- 1987-03-02 JP JP62047033A patent/JP2651146B2/ja not_active Expired - Fee Related
-
1988
- 1988-02-26 EP EP88301700A patent/EP0289114B1/de not_active Expired - Lifetime
- 1988-02-26 DE DE3856186T patent/DE3856186T2/de not_active Expired - Fee Related
- 1988-03-01 CA CA000560251A patent/CA1332342C/en not_active Expired - Fee Related
-
1993
- 1993-07-12 US US08/090,626 patent/US5463975A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPS63213337A (ja) | 1988-09-06 |
JP2651146B2 (ja) | 1997-09-10 |
US5463975A (en) | 1995-11-07 |
DE3856186T2 (de) | 1998-10-08 |
EP0289114A3 (de) | 1989-03-08 |
CA1332342C (en) | 1994-10-11 |
EP0289114A2 (de) | 1988-11-02 |
EP0289114B1 (de) | 1998-05-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3856483T2 (de) | Verfahren zur Herstellung von Dünnschichten | |
DE69010857D1 (de) | Verfahren zur Herstellung dünner Schichten von hoher Reinheit. | |
DE3888048D1 (de) | Verfahren zur Herstellung von durchsichtigen Polysiloxanelastomeren. | |
DE58906873D1 (de) | Verfahren zur Herstellung eines flexiblen Trägersubstrates. | |
DE3850285D1 (de) | Verfahren zur Herstellung von dünnen supraleitenden Schichten. | |
DE3886605D1 (de) | Verfahren zur Herstellung eines keramischen Mehrschichtsubstrats. | |
DE3889290D1 (de) | Verfahren zur Herstellung von Polyketonen. | |
DE68913429D1 (de) | Verfahren zur Herstellung von Silicium-Einkristallen. | |
DE68921565D1 (de) | Verfahren zur Herstellung von Phosphoren. | |
ATA226886A (de) | Verfahren zur herstellung von bauteilen mit nur einem einzigen grundschalsteinelement | |
DE68916393D1 (de) | Verfahren zur Herstellung von ebenen Wafern. | |
DE69034012D1 (de) | Verfahren zur Herstellung von verzweigten Polycarbonaten | |
DE3889398D1 (de) | Verfahren zur Herstellung eines Supraleiters. | |
DE68928398D1 (de) | Verfahren zur Herstellung von Polybuten | |
DE69032340D1 (de) | Verfahren zur Herstellung einer Halbleiterdünnschicht | |
DE3782389D1 (de) | "lift-off" verfahren zur herstellung von leiterbahnen auf einem substrat. | |
DE3851364D1 (de) | Verfahren zur Herstellung von supraleitendem Material. | |
DE68918050D1 (de) | Verfahren zur Herstellung von Windschutzscheiben. | |
DE58908205D1 (de) | Verfahren zur Herstellung von opaken Chinacridonen. | |
DE68912638D1 (de) | Verfahren zur Herstellung einer Kristallschicht auf einem Substrat. | |
DE3885634D1 (de) | Verfahren zur Herstellung eines keramischen Supraleiters. | |
DE58906122D1 (de) | Verfahren zur Herstellung von Phenylethanolen. | |
DE68920087D1 (de) | Verfahren zur Herstellung von Neuraminidase. | |
DE3889068D1 (de) | Verfahren zur Herstellung von Polyketonen. | |
DE68924502D1 (de) | Verfahren zur Herstellung von Einzelsubstraten. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |