DE3852430D1 - Magnetron-Zerstäubungsgerät und Verfahren zur Anwendung desselben zur Schichtenherstellung. - Google Patents

Magnetron-Zerstäubungsgerät und Verfahren zur Anwendung desselben zur Schichtenherstellung.

Info

Publication number
DE3852430D1
DE3852430D1 DE3852430T DE3852430T DE3852430D1 DE 3852430 D1 DE3852430 D1 DE 3852430D1 DE 3852430 T DE3852430 T DE 3852430T DE 3852430 T DE3852430 T DE 3852430T DE 3852430 D1 DE3852430 D1 DE 3852430D1
Authority
DE
Germany
Prior art keywords
layers
production
same
magnetron sputtering
sputtering device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3852430T
Other languages
English (en)
Other versions
DE3852430T2 (de
Inventor
Yukio Nakagawa
Ken-Ichi Natsui
Youichi Ohshita
Tadashi Sato
Eiji Setoyama
Mitsuhiro Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62147867A external-priority patent/JPH0718005B2/ja
Priority claimed from JP62249834A external-priority patent/JP2690909B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3852430D1 publication Critical patent/DE3852430D1/de
Application granted granted Critical
Publication of DE3852430T2 publication Critical patent/DE3852430T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE3852430T 1987-06-16 1988-06-15 Magnetron-Zerstäubungsgerät und Verfahren zur Anwendung desselben zur Schichtenherstellung. Expired - Fee Related DE3852430T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62147867A JPH0718005B2 (ja) 1987-06-16 1987-06-16 スパッタ装置
JP62249834A JP2690909B2 (ja) 1987-10-05 1987-10-05 マグネトロンスパッタ装置、及びその装置による成膜方法

Publications (2)

Publication Number Publication Date
DE3852430D1 true DE3852430D1 (de) 1995-01-26
DE3852430T2 DE3852430T2 (de) 1995-05-04

Family

ID=26478285

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3852430T Expired - Fee Related DE3852430T2 (de) 1987-06-16 1988-06-15 Magnetron-Zerstäubungsgerät und Verfahren zur Anwendung desselben zur Schichtenherstellung.

Country Status (4)

Country Link
US (1) US4865709A (de)
EP (1) EP0295649B1 (de)
KR (1) KR890000692A (de)
DE (1) DE3852430T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5186854A (en) * 1990-05-21 1993-02-16 The United States Of America As Represented By The Secretary Of The Navy Composites having high magnetic permeability and method of making
JP2789806B2 (ja) * 1990-09-28 1998-08-27 松下電器産業株式会社 軟磁性窒化合金膜の作製方法
US5403457A (en) * 1992-08-24 1995-04-04 Matsushita Electric Industrial Co., Ltd. Method for making soft magnetic film
US6491802B2 (en) 1992-10-28 2002-12-10 Hitachi, Ltd. Magnetic film forming system
US6290824B1 (en) * 1992-10-28 2001-09-18 Hitachi, Ltd. Magnetic film forming system
US5328582A (en) * 1992-12-04 1994-07-12 Honeywell Inc. Off-axis magnetron sputter deposition of mirrors
US5630916A (en) * 1993-03-02 1997-05-20 Cvc Products, Inc. Magnetic orienting device for thin film deposition and method of use
JP2592217B2 (ja) * 1993-11-11 1997-03-19 株式会社フロンテック 高周波マグネトロンプラズマ装置
GB9606920D0 (en) * 1996-04-02 1996-06-05 Applied Vision Ltd Magnet array for magnetrons
DE19643841A1 (de) * 1996-10-30 1998-05-07 Balzers Prozess Systeme Gmbh Vorrichtung zum Beschichten von Substraten, insbesondere mit magnetisierbaren Werkstoffen
US6254747B1 (en) * 1996-12-25 2001-07-03 Nihon Shinku Gijutsu Kabushiki Kaisha Magnetron sputtering source enclosed by a mirror-finished metallic cover
JPH11172432A (ja) * 1997-12-16 1999-06-29 Hitachi Ltd 磁性膜形成装置
US6106682A (en) 1998-05-22 2000-08-22 Cvc Products, Inc. Thin-film processing electromagnet for low-skew magnetic orientation
US6042707A (en) * 1998-05-22 2000-03-28 Cvc Products, Inc. Multiple-coil electromagnet for magnetically orienting thin films
US7294242B1 (en) * 1998-08-24 2007-11-13 Applied Materials, Inc. Collimated and long throw magnetron sputtering of nickel/iron films for magnetic recording head applications
US6579421B1 (en) 1999-01-07 2003-06-17 Applied Materials, Inc. Transverse magnetic field for ionized sputter deposition
US8696875B2 (en) * 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US10047430B2 (en) 1999-10-08 2018-08-14 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US6373364B1 (en) 2000-02-03 2002-04-16 Cvc Products, Inc. Electromagnet for thin-film processing with winding pattern for reducing skew
SE521095C2 (sv) * 2001-06-08 2003-09-30 Cardinal Cg Co Förfarande för reaktiv sputtring
US7504006B2 (en) * 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
CA2626073A1 (en) * 2005-11-01 2007-05-10 Cardinal Cg Company Reactive sputter deposition processes and equipment
DE102010049329A1 (de) * 2010-10-22 2012-04-26 Forschungszentrum Jülich GmbH Sputterquellen für Hochdrucksputtern mit großen Targets und Sputterverfahren
JP6042196B2 (ja) * 2011-12-22 2016-12-14 キヤノンアネルバ株式会社 スパッタ装置、スパッタ装置の制御装置、および成膜方法
CN104342621B (zh) * 2013-07-25 2017-03-22 北京北方微电子基地设备工艺研究中心有限责任公司 磁场调节装置及等离子体加工设备

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4025410A (en) * 1975-08-25 1977-05-24 Western Electric Company, Inc. Sputtering apparatus and methods using a magnetic field
JPS5953679A (ja) * 1982-09-18 1984-03-28 Nippon Sheet Glass Co Ltd マグネトロンスパツタリング装置
US4581118A (en) * 1983-01-26 1986-04-08 Materials Research Corporation Shaped field magnetron electrode
DE3331707A1 (de) * 1983-09-02 1985-03-21 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum reaktiven aufstaeuben von verbindungen von metallen und halbleitern
ATE47253T1 (de) * 1983-12-05 1989-10-15 Leybold Ag Magnetronkatode zum zerstaeuben ferromagnetischer targets.
JPS61288067A (ja) * 1985-06-13 1986-12-18 Hitachi Ltd スパツタ装置
JPS62119907A (ja) * 1985-11-20 1987-06-01 Hitachi Ltd 磁性薄膜作製用スパツタリング装置

Also Published As

Publication number Publication date
EP0295649A2 (de) 1988-12-21
EP0295649A3 (en) 1990-05-09
US4865709A (en) 1989-09-12
DE3852430T2 (de) 1995-05-04
EP0295649B1 (de) 1994-12-14
KR890000692A (ko) 1989-03-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee