DE3822502C1 - - Google Patents
Info
- Publication number
- DE3822502C1 DE3822502C1 DE3822502A DE3822502A DE3822502C1 DE 3822502 C1 DE3822502 C1 DE 3822502C1 DE 3822502 A DE3822502 A DE 3822502A DE 3822502 A DE3822502 A DE 3822502A DE 3822502 C1 DE3822502 C1 DE 3822502C1
- Authority
- DE
- Germany
- Prior art keywords
- layers
- temperature
- substrate
- substrate surface
- mbar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 230000036961 partial effect Effects 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000013077 target material Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000002887 superconductor Substances 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 3
- 239000002244 precipitate Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 6
- 229910002367 SrTiO Inorganic materials 0.000 description 4
- 238000000608 laser ablation Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/087—Oxides of copper or solid solutions thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5853—Oxidation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0521—Processes for depositing or forming copper oxide superconductor layers by pulsed laser deposition, e.g. laser sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Thermal Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Physical Vapour Deposition (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3822502A DE3822502C1 (US07902200-20110308-C00004.png) | 1988-07-03 | 1988-07-03 | |
EP19890111892 EP0349910A3 (de) | 1988-07-03 | 1989-06-30 | Verfahren zur Herstellung dünner Schichten aus oxidischem Hochtemperatur-Supraleiter |
JP1171759A JPH0288409A (ja) | 1988-07-03 | 1989-07-03 | 酸化物系高温超電導体より成る薄い層の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3822502A DE3822502C1 (US07902200-20110308-C00004.png) | 1988-07-03 | 1988-07-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3822502C1 true DE3822502C1 (US07902200-20110308-C00004.png) | 1989-08-24 |
Family
ID=6357868
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3822502A Expired DE3822502C1 (US07902200-20110308-C00004.png) | 1988-07-03 | 1988-07-03 |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0349910A3 (US07902200-20110308-C00004.png) |
JP (1) | JPH0288409A (US07902200-20110308-C00004.png) |
DE (1) | DE3822502C1 (US07902200-20110308-C00004.png) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3914476C1 (US07902200-20110308-C00004.png) * | 1989-05-02 | 1990-06-21 | Forschungszentrum Juelich Gmbh, 5170 Juelich, De | |
WO1993018200A1 (en) * | 1992-03-13 | 1993-09-16 | E.I. Du Pont De Nemours And Company | Process for producing thin films of inorganic oxides of controlled stoichiometry |
DE4210613A1 (de) * | 1992-03-31 | 1993-10-07 | Siemens Ag | Einrichtung zur Beschichtung eines Substrates mit einem metalloxidischen Hoch-T¶c¶-Supraleitermaterial |
DE4321817A1 (de) * | 1993-07-01 | 1995-01-12 | Forschungszentrum Juelich Gmbh | Verfahren zur Herstellung eines Schichtsystems mit wenigstens einer Schicht aus einem metalloxidischen supraleitenden Material |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04104903A (ja) * | 1990-08-21 | 1992-04-07 | Kokusai Chodendo Sangyo Gijutsu Kenkyu Center | 酸化物高温超電導薄膜の製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3816192A1 (de) * | 1988-05-11 | 1989-11-23 | Siemens Ag | Verfahren zur herstellung einer schicht aus einem metalloxidischen supraleitermaterial mittels laser-verdampfens |
-
1988
- 1988-07-03 DE DE3822502A patent/DE3822502C1/de not_active Expired
-
1989
- 1989-06-30 EP EP19890111892 patent/EP0349910A3/de not_active Withdrawn
- 1989-07-03 JP JP1171759A patent/JPH0288409A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3816192A1 (de) * | 1988-05-11 | 1989-11-23 | Siemens Ag | Verfahren zur herstellung einer schicht aus einem metalloxidischen supraleitermaterial mittels laser-verdampfens |
Non-Patent Citations (5)
Title |
---|
Appl. Physics Letters, 51, 1987, 8, S. 619-621 * |
Solid State Comm. Vol. 66, 1988, Nr. 6, S.661-665 * |
US-Z: Appl.Phys.Lett., 53, 17.10.88, S. 1557-1559, Abstr. auf S. 1557 * |
US-Z: Appl.Phys.Lett., Vol. 51, Nr. 26, Dez. 1987, S. 2263-2265 * |
US-Z: Appl.Phys.Lett., Vol. 52, Nr. 9, Febr. 1988, S. 754-756 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3914476C1 (US07902200-20110308-C00004.png) * | 1989-05-02 | 1990-06-21 | Forschungszentrum Juelich Gmbh, 5170 Juelich, De | |
WO1993018200A1 (en) * | 1992-03-13 | 1993-09-16 | E.I. Du Pont De Nemours And Company | Process for producing thin films of inorganic oxides of controlled stoichiometry |
DE4210613A1 (de) * | 1992-03-31 | 1993-10-07 | Siemens Ag | Einrichtung zur Beschichtung eines Substrates mit einem metalloxidischen Hoch-T¶c¶-Supraleitermaterial |
DE4321817A1 (de) * | 1993-07-01 | 1995-01-12 | Forschungszentrum Juelich Gmbh | Verfahren zur Herstellung eines Schichtsystems mit wenigstens einer Schicht aus einem metalloxidischen supraleitenden Material |
Also Published As
Publication number | Publication date |
---|---|
EP0349910A3 (de) | 1990-09-26 |
JPH0288409A (ja) | 1990-03-28 |
EP0349910A2 (de) | 1990-01-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8100 | Publication of patent without earlier publication of application | ||
D1 | Grant (no unexamined application published) patent law 81 | ||
8363 | Opposition against the patent | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: FORSCHUNGSZENTRUM JUELICH GMBH, 5170 JUELICH, DE |
|
8331 | Complete revocation |