DE3806762C2 - - Google Patents
Info
- Publication number
- DE3806762C2 DE3806762C2 DE19883806762 DE3806762A DE3806762C2 DE 3806762 C2 DE3806762 C2 DE 3806762C2 DE 19883806762 DE19883806762 DE 19883806762 DE 3806762 A DE3806762 A DE 3806762A DE 3806762 C2 DE3806762 C2 DE 3806762C2
- Authority
- DE
- Germany
- Prior art keywords
- producing
- silicon membrane
- etching
- membrane according
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 33
- 239000012528 membrane Substances 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 10
- 238000003631 wet chemical etching Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 3
- 238000003860 storage Methods 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 1
- 239000002033 PVDF binder Substances 0.000 claims 1
- 229960000583 acetic acid Drugs 0.000 claims 1
- 239000012362 glacial acetic acid Substances 0.000 claims 1
- 230000000391 smoking effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000001015 X-ray lithography Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19883806762 DE3806762A1 (de) | 1988-03-02 | 1988-03-02 | Verfahren zur lokalen erhoehung der optischen transparenz von siliziummembranen |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19883806762 DE3806762A1 (de) | 1988-03-02 | 1988-03-02 | Verfahren zur lokalen erhoehung der optischen transparenz von siliziummembranen |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3806762A1 DE3806762A1 (de) | 1989-09-07 |
DE3806762C2 true DE3806762C2 (fr) | 1989-12-14 |
Family
ID=6348635
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19883806762 Granted DE3806762A1 (de) | 1988-03-02 | 1988-03-02 | Verfahren zur lokalen erhoehung der optischen transparenz von siliziummembranen |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE3806762A1 (fr) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2922416A1 (de) * | 1979-06-01 | 1980-12-11 | Ibm Deutschland | Schattenwurfmaske zum strukturieren von oberflaechenbereichen und verfahren zu ihrer herstellung |
DE3338717A1 (de) * | 1983-10-25 | 1985-05-02 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung einer roentgenmaske mit metalltraegerfolie |
-
1988
- 1988-03-02 DE DE19883806762 patent/DE3806762A1/de active Granted
Also Published As
Publication number | Publication date |
---|---|
DE3806762A1 (de) | 1989-09-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |