DE3789828D1 - Eine aus neuen Halbleiterstrukturen bestehende Halbleiterschaltung. - Google Patents

Eine aus neuen Halbleiterstrukturen bestehende Halbleiterschaltung.

Info

Publication number
DE3789828D1
DE3789828D1 DE3789828T DE3789828T DE3789828D1 DE 3789828 D1 DE3789828 D1 DE 3789828D1 DE 3789828 T DE3789828 T DE 3789828T DE 3789828 T DE3789828 T DE 3789828T DE 3789828 D1 DE3789828 D1 DE 3789828D1
Authority
DE
Germany
Prior art keywords
semiconductor
circuit consisting
new
structures
semiconductor circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3789828T
Other languages
English (en)
Other versions
DE3789828T2 (de
Inventor
Hisatsune Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3789828D1 publication Critical patent/DE3789828D1/de
Publication of DE3789828T2 publication Critical patent/DE3789828T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Recrystallisation Techniques (AREA)
DE19873789828 1986-05-20 1987-05-20 Eine aus neuen Halbleiterstrukturen bestehende Halbleiterschaltung. Expired - Lifetime DE3789828T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61116775A JP2508637B2 (ja) 1986-05-20 1986-05-20 半導体素子

Publications (2)

Publication Number Publication Date
DE3789828D1 true DE3789828D1 (de) 1994-06-23
DE3789828T2 DE3789828T2 (de) 1994-10-13

Family

ID=14695413

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19873789828 Expired - Lifetime DE3789828T2 (de) 1986-05-20 1987-05-20 Eine aus neuen Halbleiterstrukturen bestehende Halbleiterschaltung.

Country Status (3)

Country Link
EP (1) EP0246642B1 (de)
JP (1) JP2508637B2 (de)
DE (1) DE3789828T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2256313B (en) * 1991-01-04 1995-03-29 Hitachi Europ Ltd Semiconductor device
JP3527941B2 (ja) * 1999-05-31 2004-05-17 独立行政法人物質・材料研究機構 半導体スーパーアトムとその結合体の作製方法
WO2006035653A1 (ja) * 2004-09-30 2006-04-06 Universal Can Corporation 缶蓋

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4103312A (en) * 1977-06-09 1978-07-25 International Business Machines Corporation Semiconductor memory devices
US4503447A (en) * 1982-07-16 1985-03-05 The United States Of America As Represented By The Secretary Of The Army Multi-dimensional quantum well device
JPS607190A (ja) * 1983-06-24 1985-01-14 Nippon Telegr & Teleph Corp <Ntt> 多次元超格子及びその製法
US4912531A (en) * 1984-06-29 1990-03-27 Texas Instruments Incorporated Three-terminal quantum device
US4581621A (en) * 1984-07-02 1986-04-08 Texas Instruments Incorporated Quantum device output switch

Also Published As

Publication number Publication date
EP0246642A3 (en) 1989-10-18
DE3789828T2 (de) 1994-10-13
JP2508637B2 (ja) 1996-06-19
JPS62272519A (ja) 1987-11-26
EP0246642B1 (de) 1994-05-18
EP0246642A2 (de) 1987-11-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition