DE3787542T2 - Verfahren und Vorrichtung zum Niederschlagen aus der Gasphase. - Google Patents

Verfahren und Vorrichtung zum Niederschlagen aus der Gasphase.

Info

Publication number
DE3787542T2
DE3787542T2 DE19873787542 DE3787542T DE3787542T2 DE 3787542 T2 DE3787542 T2 DE 3787542T2 DE 19873787542 DE19873787542 DE 19873787542 DE 3787542 T DE3787542 T DE 3787542T DE 3787542 T2 DE3787542 T2 DE 3787542T2
Authority
DE
Germany
Prior art keywords
precipitation
gas phase
phase
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19873787542
Other languages
English (en)
Other versions
DE3787542D1 (de
Inventor
Hiroji Kawai
Syunji Imanaga
Ichiro Hase
Kunio Kaneko
Naozo Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61031100A external-priority patent/JPH0722132B2/ja
Priority claimed from JP3110186A external-priority patent/JPH0722133B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE3787542D1 publication Critical patent/DE3787542D1/de
Application granted granted Critical
Publication of DE3787542T2 publication Critical patent/DE3787542T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE19873787542 1986-02-15 1987-02-13 Verfahren und Vorrichtung zum Niederschlagen aus der Gasphase. Expired - Fee Related DE3787542T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61031100A JPH0722132B2 (ja) 1986-02-15 1986-02-15 気相成長方法
JP3110186A JPH0722133B2 (ja) 1986-02-15 1986-02-15 気相成長装置

Publications (2)

Publication Number Publication Date
DE3787542D1 DE3787542D1 (de) 1993-11-04
DE3787542T2 true DE3787542T2 (de) 1994-04-28

Family

ID=26369555

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19873787542 Expired - Fee Related DE3787542T2 (de) 1986-02-15 1987-02-13 Verfahren und Vorrichtung zum Niederschlagen aus der Gasphase.

Country Status (4)

Country Link
EP (1) EP0233610B1 (de)
CN (1) CN87102726A (de)
CA (1) CA1302803C (de)
DE (1) DE3787542T2 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10104684A1 (de) * 2001-02-02 2002-08-08 Creat Stefan Kipp Kg Schichtdickenmeßverfahren an einem Werkstück
DE10124609B4 (de) * 2001-05-17 2012-12-27 Aixtron Se Verfahren zum Abscheiden aktiver Schichten auf Substraten

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0306069A3 (de) * 1987-08-31 1990-12-27 Koninklijke Philips Electronics N.V. Verfahren zur Bildung einer Oxidschicht auf einem Substrat
US4915476A (en) * 1988-05-31 1990-04-10 Hughes Aircraft Company Single-notch rugate filters and a controlled method of manufacture thereof
US5688565A (en) * 1988-12-27 1997-11-18 Symetrix Corporation Misted deposition method of fabricating layered superlattice materials
US5614252A (en) * 1988-12-27 1997-03-25 Symetrix Corporation Method of fabricating barium strontium titanate
US5138520A (en) * 1988-12-27 1992-08-11 Symetrix Corporation Methods and apparatus for material deposition
US5456945A (en) * 1988-12-27 1995-10-10 Symetrix Corporation Method and apparatus for material deposition
WO1990007390A1 (en) * 1988-12-27 1990-07-12 Symetrix Corporation Methods and apparatus for material deposition
US4959244A (en) * 1989-03-27 1990-09-25 General Electric Company Temperature measurement and control for photohermal processes
JPH0751478B2 (ja) * 1989-11-24 1995-06-05 新技術事業団 化合物結晶のエピタキシャル成長方法
US5962085A (en) * 1991-02-25 1999-10-05 Symetrix Corporation Misted precursor deposition apparatus and method with improved mist and mist flow
JP2987379B2 (ja) * 1991-11-30 1999-12-06 科学技術振興事業団 半導体結晶のエピタキシャル成長方法
JPH0790593A (ja) * 1993-09-17 1995-04-04 Hitachi Ltd 成膜装置および成膜方法
US8603839B2 (en) * 2010-07-23 2013-12-10 First Solar, Inc. In-line metrology system
CN103194730A (zh) * 2013-04-09 2013-07-10 上海华力微电子有限公司 氮化钛化学气相沉积设备
CN105506733A (zh) * 2015-12-23 2016-04-20 圆融光电科技股份有限公司 外延生长设备
CN110656322A (zh) * 2019-09-11 2020-01-07 厦门三安光电有限公司 连续生长外延片的方法、装置、设备及存储介质
CN115807219B (zh) * 2023-02-13 2023-05-30 南昌大学 一种光电薄膜材料制备控制系统及方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5365276A (en) * 1976-11-25 1978-06-10 Toshiba Corp Rotary chemical evaporation apparatus for forming thin film
US4525376A (en) * 1982-03-16 1985-06-25 Energy Conversion Devices, Inc. Optical methods for controlling layer thickness
FR2531774A1 (fr) * 1982-08-12 1984-02-17 Cit Alcatel Dispositif de controle d'epaisseur de couches minces faiblement absorbantes

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10104684A1 (de) * 2001-02-02 2002-08-08 Creat Stefan Kipp Kg Schichtdickenmeßverfahren an einem Werkstück
DE10124609B4 (de) * 2001-05-17 2012-12-27 Aixtron Se Verfahren zum Abscheiden aktiver Schichten auf Substraten

Also Published As

Publication number Publication date
CN87102726A (zh) 1987-12-16
DE3787542D1 (de) 1993-11-04
EP0233610A2 (de) 1987-08-26
EP0233610B1 (de) 1993-09-29
CA1302803C (en) 1992-06-09
EP0233610A3 (en) 1989-09-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee