DE3782599D1 - Laser mit monolitisch integrierten, planaren elementen und verfahren zu deren herstellung. - Google Patents
Laser mit monolitisch integrierten, planaren elementen und verfahren zu deren herstellung.Info
- Publication number
- DE3782599D1 DE3782599D1 DE8787112176T DE3782599T DE3782599D1 DE 3782599 D1 DE3782599 D1 DE 3782599D1 DE 8787112176 T DE8787112176 T DE 8787112176T DE 3782599 T DE3782599 T DE 3782599T DE 3782599 D1 DE3782599 D1 DE 3782599D1
- Authority
- DE
- Germany
- Prior art keywords
- laser
- production
- planar elements
- monolitically
- integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0205—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth during growth of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/908,743 US4891093A (en) | 1986-09-18 | 1986-09-18 | Processes for the manufacture of laser including monolithically integrated planar devices |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3782599D1 true DE3782599D1 (de) | 1992-12-17 |
DE3782599T2 DE3782599T2 (de) | 1993-06-03 |
Family
ID=25426183
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787112176T Expired - Fee Related DE3782599T2 (de) | 1986-09-18 | 1987-08-21 | Laser mit monolitisch integrierten, planaren elementen und verfahren zu deren herstellung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4891093A (de) |
EP (1) | EP0261408B1 (de) |
JP (1) | JPS6387783A (de) |
CA (1) | CA1279920C (de) |
DE (1) | DE3782599T2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5013682A (en) * | 1986-10-22 | 1991-05-07 | Texas Instruments Incorporated | Method for selective epitaxy using a WSI mask |
US5145807A (en) * | 1988-05-11 | 1992-09-08 | Mitsubishi Kasei Corporation | Method of making semiconductor laser devices |
DE58906978D1 (de) * | 1988-09-22 | 1994-03-24 | Siemens Ag | Abstimmbarer DFB-Laser. |
DE3910288A1 (de) * | 1989-03-30 | 1990-10-04 | Standard Elektrik Lorenz Ag | Verfahren zur herstellung monolithisch integrierter optoelektronischer module |
US4971928A (en) * | 1990-01-16 | 1990-11-20 | General Motors Corporation | Method of making a light emitting semiconductor having a rear reflecting surface |
US5625636A (en) * | 1991-10-11 | 1997-04-29 | Bryan; Robert P. | Integration of photoactive and electroactive components with vertical cavity surface emitting lasers |
EP0704913B1 (de) * | 1994-09-28 | 1999-09-01 | Nippon Telegraph And Telephone Corporation | Optische Halbleitervorrichtung und Herstellungsverfahren |
JPH10255645A (ja) * | 1997-03-11 | 1998-09-25 | Agency Of Ind Science & Technol | 冷電子放出素子 |
US6670211B2 (en) * | 2000-06-08 | 2003-12-30 | The Furukawa Electric Co., Ltd. | Semiconductor laser device |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3579055A (en) * | 1968-08-05 | 1971-05-18 | Bell & Howell Co | Semiconductor laser device and method for it{3 s fabrication |
US4033796A (en) * | 1975-06-23 | 1977-07-05 | Xerox Corporation | Method of making buried-heterostructure diode injection laser |
JPS5826834B2 (ja) * | 1979-09-28 | 1983-06-06 | 株式会社日立製作所 | 半導体レ−ザ−装置 |
JPS56164587A (en) * | 1980-05-21 | 1981-12-17 | Fujitsu Ltd | Semiconductor device |
US4532694A (en) * | 1981-06-11 | 1985-08-06 | Honeywell Inc. | Method of fabricating emitter/detector-in-a-well for the integration of electronic and optoelectronic components |
US4484332A (en) * | 1982-06-02 | 1984-11-20 | The United States Of America As Represented By The Secretary Of The Air Force | Multiple double heterojunction buried laser device |
JPS5941317A (ja) * | 1982-08-31 | 1984-03-07 | Mitsui Toatsu Chem Inc | プロピレン―エチレンブロック共重合体の製造法 |
JPS5944887A (ja) * | 1982-09-07 | 1984-03-13 | Fujitsu Ltd | 半導体発光装置 |
US4509996A (en) * | 1982-11-05 | 1985-04-09 | International Standard Electric Corporation | Injection laser manufacture |
US4566171A (en) * | 1983-06-20 | 1986-01-28 | At&T Bell Laboratories | Elimination of mask undercutting in the fabrication of InP/InGaAsP BH devices |
EP0132408A3 (de) * | 1983-07-26 | 1986-04-16 | Jim Auclair | Verfahren und Vorrichtung zur Züchtung von Schichten und zur Herstellung von Überzügen auf einem Substrat |
JPS6045083A (ja) * | 1983-08-23 | 1985-03-11 | Agency Of Ind Science & Technol | 平面型半導体レ−ザ集積回路装置 |
US4577321A (en) * | 1983-09-19 | 1986-03-18 | Honeywell Inc. | Integrated quantum well lasers for wavelength division multiplexing |
US4645687A (en) * | 1983-11-10 | 1987-02-24 | At&T Laboratories | Deposition of III-V semiconductor materials |
US4660208A (en) * | 1984-06-15 | 1987-04-21 | American Telephone And Telegraph Company, At&T Bell Laboratories | Semiconductor devices employing Fe-doped MOCVD InP-based layer for current confinement |
-
1986
- 1986-09-18 US US06/908,743 patent/US4891093A/en not_active Expired - Fee Related
-
1987
- 1987-07-30 CA CA000543400A patent/CA1279920C/en not_active Expired - Fee Related
- 1987-08-21 EP EP87112176A patent/EP0261408B1/de not_active Expired - Lifetime
- 1987-08-21 DE DE8787112176T patent/DE3782599T2/de not_active Expired - Fee Related
- 1987-09-18 JP JP62234730A patent/JPS6387783A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US4891093A (en) | 1990-01-02 |
EP0261408B1 (de) | 1992-11-11 |
DE3782599T2 (de) | 1993-06-03 |
CA1279920C (en) | 1991-02-05 |
EP0261408A3 (en) | 1989-01-11 |
EP0261408A2 (de) | 1988-03-30 |
JPS6387783A (ja) | 1988-04-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |