DE3781389T2 - Indium-phosphide feldeffekttransistor mit hetero-mis-gate. - Google Patents
Indium-phosphide feldeffekttransistor mit hetero-mis-gate.Info
- Publication number
- DE3781389T2 DE3781389T2 DE8787118245T DE3781389T DE3781389T2 DE 3781389 T2 DE3781389 T2 DE 3781389T2 DE 8787118245 T DE8787118245 T DE 8787118245T DE 3781389 T DE3781389 T DE 3781389T DE 3781389 T2 DE3781389 T2 DE 3781389T2
- Authority
- DE
- Germany
- Prior art keywords
- mis
- hetero
- gate
- field effect
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/432—Heterojunction gate for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61293853A JPS63144580A (ja) | 1986-12-09 | 1986-12-09 | 電界効果トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3781389D1 DE3781389D1 (de) | 1992-10-01 |
DE3781389T2 true DE3781389T2 (de) | 1993-03-18 |
Family
ID=17800002
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787118245T Expired - Fee Related DE3781389T2 (de) | 1986-12-09 | 1987-12-09 | Indium-phosphide feldeffekttransistor mit hetero-mis-gate. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4837605A (de) |
EP (1) | EP0271080B1 (de) |
JP (1) | JPS63144580A (de) |
DE (1) | DE3781389T2 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH031547A (ja) * | 1989-05-29 | 1991-01-08 | Mitsubishi Electric Corp | 化合物半導体mis・fetおよびその製造方法 |
US6900481B2 (en) * | 2002-02-21 | 2005-05-31 | Intel Corporation | Non-silicon semiconductor and high-k gate dielectric metal oxide semiconductor field effect transistors |
EP1691152A1 (de) * | 2005-01-14 | 2006-08-16 | Electrolux Home Products Corporation N.V. | Modulare Kühleinheit und Verfahren zur Montage einer modularen Kühleinheit in ein Gehäuse eines Kühlgerätes |
KR102425892B1 (ko) * | 2020-09-09 | 2022-07-26 | 연세대학교 산학협력단 | 인듐과 인을 포함하는 층상구조 화합물, 나노시트 및 이를 이용한 전기 소자 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4117504A (en) * | 1976-08-06 | 1978-09-26 | Vadim Nikolaevich Maslov | Heterogeneous semiconductor structure with composition gradient and method for producing same |
US4160261A (en) * | 1978-01-13 | 1979-07-03 | Bell Telephone Laboratories, Incorporated | Mis heterojunction structures |
US4757358A (en) * | 1982-03-12 | 1988-07-12 | International Business Machines Corporation | MESFET semiconductor device fabrication with same metal contacting source, drain and gate regions |
US4745447A (en) * | 1985-06-14 | 1988-05-17 | American Telephone And Telegraph Company, At&T Bell Laboratories | Gallium arsenide on gallium indium arsenide Schottky barrier device |
-
1986
- 1986-12-09 JP JP61293853A patent/JPS63144580A/ja active Granted
-
1987
- 1987-12-09 EP EP87118245A patent/EP0271080B1/de not_active Expired - Lifetime
- 1987-12-09 DE DE8787118245T patent/DE3781389T2/de not_active Expired - Fee Related
- 1987-12-09 US US07/130,575 patent/US4837605A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0271080A3 (en) | 1990-03-14 |
EP0271080B1 (de) | 1992-08-26 |
JPH0261149B2 (de) | 1990-12-19 |
DE3781389D1 (de) | 1992-10-01 |
EP0271080A2 (de) | 1988-06-15 |
JPS63144580A (ja) | 1988-06-16 |
US4837605A (en) | 1989-06-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |