DE3774729D1 - Lichtempfangselement zur verwendung in der elektrophotographie. - Google Patents

Lichtempfangselement zur verwendung in der elektrophotographie.

Info

Publication number
DE3774729D1
DE3774729D1 DE8787301764T DE3774729T DE3774729D1 DE 3774729 D1 DE3774729 D1 DE 3774729D1 DE 8787301764 T DE8787301764 T DE 8787301764T DE 3774729 T DE3774729 T DE 3774729T DE 3774729 D1 DE3774729 D1 DE 3774729D1
Authority
DE
Germany
Prior art keywords
electrophotography
light receiving
receiving element
light
receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787301764T
Other languages
English (en)
Inventor
Shigeru Shirai
Keishi Saito
Takayoshi Arai
Minoru Kato
Yasushi Fujioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61045914A external-priority patent/JPH0713746B2/ja
Priority claimed from JP61046701A external-priority patent/JPH0713747B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE3774729D1 publication Critical patent/DE3774729D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • G03G5/08242—Silicon-based comprising three or four silicon-based layers at least one with varying composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/0825—Silicon-based comprising five or six silicon-based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/0825—Silicon-based comprising five or six silicon-based layers
    • G03G5/08257—Silicon-based comprising five or six silicon-based layers at least one with varying composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)
DE8787301764T 1986-03-03 1987-02-27 Lichtempfangselement zur verwendung in der elektrophotographie. Expired - Lifetime DE3774729D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61045914A JPH0713746B2 (ja) 1986-03-03 1986-03-03 電子写真用光受容部材
JP61046701A JPH0713747B2 (ja) 1986-03-04 1986-03-04 電子写真用光受容部材

Publications (1)

Publication Number Publication Date
DE3774729D1 true DE3774729D1 (de) 1992-01-09

Family

ID=26386012

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787301764T Expired - Lifetime DE3774729D1 (de) 1986-03-03 1987-02-27 Lichtempfangselement zur verwendung in der elektrophotographie.

Country Status (5)

Country Link
US (1) US4818655A (de)
EP (1) EP0236093B1 (de)
CN (1) CN1014184B (de)
CA (1) CA1303893C (de)
DE (1) DE3774729D1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5087542A (en) * 1988-12-27 1992-02-11 Canon Kabushiki Kaisha Electrophotographic image-forming method wherein an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and fine particle insulating toner are used
JP2775272B2 (ja) * 1988-12-27 1998-07-16 キヤノン株式会社 改良された非単結晶シリコン系光受容部材を用いた電子写真装置による画像形成方法
US6855436B2 (en) * 2003-05-30 2005-02-15 International Business Machines Corporation Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172344A (en) * 1981-04-17 1982-10-23 Minolta Camera Co Ltd Electrophotographic photorecepter
DE3311835A1 (de) * 1982-03-31 1983-10-13 Canon K.K., Tokyo Fotoleitfaehiges aufzeichnungselement
JPH0614189B2 (ja) * 1983-04-14 1994-02-23 キヤノン株式会社 電子写真用光導電部材
JPS6032055A (ja) * 1983-08-03 1985-02-19 Canon Inc 像保持部材
US4609604A (en) * 1983-08-26 1986-09-02 Canon Kabushiki Kaisha Photoconductive member having a germanium silicon photoconductor
US4598032A (en) * 1983-12-29 1986-07-01 Canon Kabushiki Kaisha Photoconductive member with a-Si; a-(Si/Ge) and a-(Si/C) layers
DE3546544C2 (de) * 1984-02-28 1990-02-15 Sharp K.K., Osaka, Jp
US4705731A (en) * 1984-06-05 1987-11-10 Canon Kabushiki Kaisha Member having substrate with protruding surface light receiving layer of amorphous silicon and surface reflective layer
DE3580939D1 (de) * 1984-06-05 1991-01-31 Canon Kk Lichtempfangselement.
JPS6126054A (ja) * 1984-07-16 1986-02-05 Minolta Camera Co Ltd 電子写真感光体
US4675265A (en) * 1985-03-26 1987-06-23 Fuji Electric Co., Ltd. Electrophotographic light-sensitive element with amorphous C overlayer

Also Published As

Publication number Publication date
US4818655A (en) 1989-04-04
EP0236093A1 (de) 1987-09-09
CA1303893C (en) 1992-06-23
AU6960087A (en) 1987-09-10
AU616617B2 (en) 1991-10-31
CN87101639A (zh) 1987-11-25
EP0236093B1 (de) 1991-11-27
CN1014184B (zh) 1991-10-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee