DE3751745T2 - Hochempfindliche Resiste mit Selbstzersetzungstemperatur grösser als etwa 160 Grad Celsius - Google Patents
Hochempfindliche Resiste mit Selbstzersetzungstemperatur grösser als etwa 160 Grad CelsiusInfo
- Publication number
- DE3751745T2 DE3751745T2 DE19873751745 DE3751745T DE3751745T2 DE 3751745 T2 DE3751745 T2 DE 3751745T2 DE 19873751745 DE19873751745 DE 19873751745 DE 3751745 T DE3751745 T DE 3751745T DE 3751745 T2 DE3751745 T2 DE 3751745T2
- Authority
- DE
- Germany
- Prior art keywords
- self
- degrees celsius
- decomposition temperature
- highly sensitive
- temperature greater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US92265786A | 1986-10-23 | 1986-10-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3751745D1 DE3751745D1 (de) | 1996-04-25 |
DE3751745T2 true DE3751745T2 (de) | 1996-09-26 |
Family
ID=25447393
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19873751745 Expired - Fee Related DE3751745T2 (de) | 1986-10-23 | 1987-10-20 | Hochempfindliche Resiste mit Selbstzersetzungstemperatur grösser als etwa 160 Grad Celsius |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0264908B1 (ja) |
JP (1) | JPS63139343A (ja) |
DE (1) | DE3751745T2 (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE68926019T2 (de) * | 1988-10-28 | 1996-10-02 | Ibm | Positiv arbeitende hochempfindliche Photolack-Zusammensetzung |
EP0378156A3 (en) * | 1989-01-09 | 1992-02-26 | Nitto Denko Corporation | Positively photosensitive polyimide composition |
US5219711A (en) * | 1990-04-10 | 1993-06-15 | E. I. Du Pont De Nemours And Company | Positive image formation utilizing resist material with carbazole diazonium salt acid generator |
US5212047A (en) * | 1990-04-10 | 1993-05-18 | E. I. Du Pont De Nemours And Company | Resist material and process for use |
US5071731A (en) * | 1990-04-10 | 1991-12-10 | E. I. Du Pont De Nemours And Company | Aqueous processable photosensitive element with an elastomeric layer |
US5262281A (en) * | 1990-04-10 | 1993-11-16 | E. I. Du Pont De Nemours And Company | Resist material for use in thick film resists |
US5093221A (en) * | 1990-04-10 | 1992-03-03 | E. I. Du Pont De Nemours And Company | Process of making colored images using aqueous processable photosensitive elements |
US4985332A (en) * | 1990-04-10 | 1991-01-15 | E. I. Du Pont De Nemours And Company | Resist material with carbazole diazonium salt acid generator and process for use |
US5206317A (en) * | 1990-04-10 | 1993-04-27 | E. I. Du Pont De Nemours And Company | Resist material and process for use |
US5120633A (en) * | 1990-04-10 | 1992-06-09 | E. I. Du Pont De Nemours And Company | Resist material for use in thick film resists |
US5252427A (en) * | 1990-04-10 | 1993-10-12 | E. I. Du Pont De Nemours And Company | Positive photoresist compositions |
US5145764A (en) * | 1990-04-10 | 1992-09-08 | E. I. Du Pont De Nemours And Company | Positive working resist compositions process of exposing, stripping developing |
JPH04149445A (ja) * | 1990-10-12 | 1992-05-22 | Mitsubishi Electric Corp | ポジ型感光性組成物 |
EP0659781A3 (de) * | 1993-12-21 | 1995-09-27 | Ciba Geigy Ag | Maleinimidcopolymere, insbesonder für Photoresists. |
DE4414896A1 (de) * | 1994-04-28 | 1995-11-02 | Hoechst Ag | Positiv arbeitendes strahlungempfindliches Gemisch |
WO1996012216A1 (fr) * | 1994-10-13 | 1996-04-25 | Nippon Zeon Co., Ltd. | Composition de reserve |
WO1997027515A1 (fr) | 1996-01-26 | 1997-07-31 | Nippon Zeon Co., Ltd. | Composition de resist |
JP6213135B2 (ja) * | 2013-10-17 | 2017-10-18 | 東ソー株式会社 | trans−スチルベン−N−置換マレイミド共重合体及びそれを用いた位相差フィルム |
US11698586B2 (en) | 2018-03-23 | 2023-07-11 | Merck Patent Gmbh | Negative-working ultra thick film photoresist |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5868743A (ja) * | 1981-10-21 | 1983-04-23 | Hitachi Ltd | 放射線感応性有機高分子材料 |
US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
US4469774A (en) * | 1983-03-28 | 1984-09-04 | E. I. Du Pont De Nemours And Company | Positive-working photosensitive benzoin esters |
JPS6336240A (ja) * | 1986-07-28 | 1988-02-16 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | レジスト構造の作成方法 |
-
1987
- 1987-10-20 EP EP19870115343 patent/EP0264908B1/en not_active Expired - Lifetime
- 1987-10-20 DE DE19873751745 patent/DE3751745T2/de not_active Expired - Fee Related
- 1987-10-22 JP JP62265554A patent/JPS63139343A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0519139B2 (ja) | 1993-03-15 |
EP0264908A3 (en) | 1990-07-11 |
JPS63139343A (ja) | 1988-06-11 |
EP0264908A2 (en) | 1988-04-27 |
EP0264908B1 (en) | 1996-03-20 |
DE3751745D1 (de) | 1996-04-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |