DE3751745T2 - Hochempfindliche Resiste mit Selbstzersetzungstemperatur grösser als etwa 160 Grad Celsius - Google Patents

Hochempfindliche Resiste mit Selbstzersetzungstemperatur grösser als etwa 160 Grad Celsius

Info

Publication number
DE3751745T2
DE3751745T2 DE19873751745 DE3751745T DE3751745T2 DE 3751745 T2 DE3751745 T2 DE 3751745T2 DE 19873751745 DE19873751745 DE 19873751745 DE 3751745 T DE3751745 T DE 3751745T DE 3751745 T2 DE3751745 T2 DE 3751745T2
Authority
DE
Germany
Prior art keywords
self
degrees celsius
decomposition temperature
highly sensitive
temperature greater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19873751745
Other languages
German (de)
English (en)
Other versions
DE3751745D1 (de
Inventor
William Ross Brunsvold
Willard Earl Conley
Dale Murray Crockatt
Nancy Ellen Iwamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3751745D1 publication Critical patent/DE3751745D1/de
Publication of DE3751745T2 publication Critical patent/DE3751745T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE19873751745 1986-10-23 1987-10-20 Hochempfindliche Resiste mit Selbstzersetzungstemperatur grösser als etwa 160 Grad Celsius Expired - Fee Related DE3751745T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US92265786A 1986-10-23 1986-10-23

Publications (2)

Publication Number Publication Date
DE3751745D1 DE3751745D1 (de) 1996-04-25
DE3751745T2 true DE3751745T2 (de) 1996-09-26

Family

ID=25447393

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19873751745 Expired - Fee Related DE3751745T2 (de) 1986-10-23 1987-10-20 Hochempfindliche Resiste mit Selbstzersetzungstemperatur grösser als etwa 160 Grad Celsius

Country Status (3)

Country Link
EP (1) EP0264908B1 (ja)
JP (1) JPS63139343A (ja)
DE (1) DE3751745T2 (ja)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68926019T2 (de) * 1988-10-28 1996-10-02 Ibm Positiv arbeitende hochempfindliche Photolack-Zusammensetzung
EP0378156A3 (en) * 1989-01-09 1992-02-26 Nitto Denko Corporation Positively photosensitive polyimide composition
US5219711A (en) * 1990-04-10 1993-06-15 E. I. Du Pont De Nemours And Company Positive image formation utilizing resist material with carbazole diazonium salt acid generator
US5212047A (en) * 1990-04-10 1993-05-18 E. I. Du Pont De Nemours And Company Resist material and process for use
US5071731A (en) * 1990-04-10 1991-12-10 E. I. Du Pont De Nemours And Company Aqueous processable photosensitive element with an elastomeric layer
US5262281A (en) * 1990-04-10 1993-11-16 E. I. Du Pont De Nemours And Company Resist material for use in thick film resists
US5093221A (en) * 1990-04-10 1992-03-03 E. I. Du Pont De Nemours And Company Process of making colored images using aqueous processable photosensitive elements
US4985332A (en) * 1990-04-10 1991-01-15 E. I. Du Pont De Nemours And Company Resist material with carbazole diazonium salt acid generator and process for use
US5206317A (en) * 1990-04-10 1993-04-27 E. I. Du Pont De Nemours And Company Resist material and process for use
US5120633A (en) * 1990-04-10 1992-06-09 E. I. Du Pont De Nemours And Company Resist material for use in thick film resists
US5252427A (en) * 1990-04-10 1993-10-12 E. I. Du Pont De Nemours And Company Positive photoresist compositions
US5145764A (en) * 1990-04-10 1992-09-08 E. I. Du Pont De Nemours And Company Positive working resist compositions process of exposing, stripping developing
JPH04149445A (ja) * 1990-10-12 1992-05-22 Mitsubishi Electric Corp ポジ型感光性組成物
EP0659781A3 (de) * 1993-12-21 1995-09-27 Ciba Geigy Ag Maleinimidcopolymere, insbesonder für Photoresists.
DE4414896A1 (de) * 1994-04-28 1995-11-02 Hoechst Ag Positiv arbeitendes strahlungempfindliches Gemisch
WO1996012216A1 (fr) * 1994-10-13 1996-04-25 Nippon Zeon Co., Ltd. Composition de reserve
WO1997027515A1 (fr) 1996-01-26 1997-07-31 Nippon Zeon Co., Ltd. Composition de resist
JP6213135B2 (ja) * 2013-10-17 2017-10-18 東ソー株式会社 trans−スチルベン−N−置換マレイミド共重合体及びそれを用いた位相差フィルム
US11698586B2 (en) 2018-03-23 2023-07-11 Merck Patent Gmbh Negative-working ultra thick film photoresist

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5868743A (ja) * 1981-10-21 1983-04-23 Hitachi Ltd 放射線感応性有機高分子材料
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4469774A (en) * 1983-03-28 1984-09-04 E. I. Du Pont De Nemours And Company Positive-working photosensitive benzoin esters
JPS6336240A (ja) * 1986-07-28 1988-02-16 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン レジスト構造の作成方法

Also Published As

Publication number Publication date
JPH0519139B2 (ja) 1993-03-15
EP0264908A3 (en) 1990-07-11
JPS63139343A (ja) 1988-06-11
EP0264908A2 (en) 1988-04-27
EP0264908B1 (en) 1996-03-20
DE3751745D1 (de) 1996-04-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee