DE3735818A1 - CAPSULE OF A LIGHTING ELEMENT WITH INTEGRATED RADIATOR AND OVERLOAD CURRENT PROTECTION CIRCUIT - Google Patents

CAPSULE OF A LIGHTING ELEMENT WITH INTEGRATED RADIATOR AND OVERLOAD CURRENT PROTECTION CIRCUIT

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Publication number
DE3735818A1
DE3735818A1 DE19873735818 DE3735818A DE3735818A1 DE 3735818 A1 DE3735818 A1 DE 3735818A1 DE 19873735818 DE19873735818 DE 19873735818 DE 3735818 A DE3735818 A DE 3735818A DE 3735818 A1 DE3735818 A1 DE 3735818A1
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Germany
Prior art keywords
capsule
lighting element
light emitting
zone
heat sink
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19873735818
Other languages
German (de)
Inventor
Bun-Joong Kim
Ki-Joon Kim
Choon-Woo Nahm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Semiconductor and Telecomunications Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Semiconductor and Telecomunications Co Ltd filed Critical Samsung Semiconductor and Telecomunications Co Ltd
Publication of DE3735818A1 publication Critical patent/DE3735818A1/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

A light emitting semi-conductive device 15 is mounted on an auxiliary semi-conductor chip 25 which acts both as an overload protection resistor 26 as well as a heat transfer member. The heat transfer member is thus integrated with the drive protection resistor of the light emitting device. A principle heat-sink 17 is mounted on main frame within a package and is coupled to the light emitting semi-conductor device 15. The auxiliary semi-conductor chip 25 is connected with both the heat sink and the light emitting device and has semi-conductive regions 26 defining the protective resistor electrically coupled with the light emitting device. The invention avoids the use of discrete resistors and substantially reduces the assembly processes of soldering and bonding to a printed circuit board. The device may be used in fibre optic communication. <IMAGE>

Description

Die Erfindung bezieht sich auf eine Kapsel für ein Licht­ emissions- oder Leuchtelement für Lichtleitfaser(daten)­ übertragung. Die Kapsel (package) enthält einen integrier­ ten Schaltkreis, der als Kühlkörper oder Wärmesenke sowie als Schutzwiderstand für Überlastungsstrom, d.h. Stoß­ strom, dienen kann.The invention relates to a capsule for a light emission or lighting element for optical fiber (data) transmission. The capsule (package) contains an integrier circuit that acts as a heat sink or heat sink as well as protective resistor for overload current, i.e. Shock electricity that can serve.

Lichtemissions- oder Leuchtelemente als Lichtquelle für Lichtleitfaser(daten)übertragung lassen sich aus Verbund­ halbleitern aus Elementen der Gruppen III und V des Periodensystems herstellen. Unter solchen lichtemittieren­ den Vorrichtungen werden insbesondere Laserdioden in Kurz- und Langstrecken-Lichtleitfaserverbindungen als kurz- bzw. langwellige Lichtquellen eingesetzt.Light emission or lighting elements as a light source for Optical fiber (data) transmission can be made from composite semiconductors from elements of groups III and V of the Establish the periodic table. Under such light emit the devices in particular laser diodes in Short and long distance optical fiber connections as short- or long-wave light sources used.

Für das Ansteuern dieser Laserdioden muß an diese ein oberhalb der Schwellenspannung liegender Arbeitsstrom angelegt werden. Da jedoch die Wärmeleitfähigkeit die­ ser Verbundhalbleiter gering ist, kann aufgrund der Schwankung der Schwellenspannung ohne die Verwendung von Kühlkörper- oder Wärmesenkenmaterialien keine sta­ bile Lichtintensität bzw. Leuchtstärke gewährleistet werden. Demzufolge muß in der Kapsel eine Schutzschal­ tung vorgesehen sein, um ein Durchbrennen dieser Dioden durch einen bei plötzlicher Änderung der angelegten Spannung induzierten Überlastungsstrom zu vermeiden.For driving these laser diodes, one must be on them Working current above the threshold voltage be created. However, since the thermal conductivity This compound semiconductor is low, can due to Fluctuation of the threshold voltage without using it no heat sink or heat sink materials bile light intensity or luminosity guaranteed will. Accordingly, a protective scarf must be in the capsule device should be provided to burn these diodes by a sudden change in the created Avoid voltage induced overload current.

Fig. 1 veranschaulicht eine herkömmliche Schutzschal­ tung einer Laserdiode und einen Schutzwiderstand. Eine Anschlußklemme 1 ist mit einem Widerstand 4 verbunden, und eine Laserdiode 3 liegt mit ihrer Anode am Wider­ stand 4 und mit ihrer Kathode an Masse. Der Widerstand 4, dessen Widerstandswert größer ist als der Durchlaßwider­ stand der Laserdiode 3, vermag einen Überlastungsstrom, der induziert wird, wenn die Spannung an der Klemme 1 über der absoluten maximalen Nenngröße liegt, erheblich zu verkleinern. Ohne diesen Widerstand 4 könnte die Laser­ diode 3 durchbrennen. Fig. 1 illustrates a conventional protective circuit device of a laser diode and a protective resistor. A terminal 1 is connected to a resistor 4 , and a laser diode 3 is with its anode on the opposing stand 4 and with its cathode to ground. The resistor 4 , the resistance value of which was greater than the forward resistance of the laser diode 3 , is capable of significantly reducing an overload current which is induced when the voltage at the terminal 1 is above the absolute maximum nominal size. Without this resistor 4 , the laser diode 3 could burn out.

Fig. 2 ist eine Schnittansicht einer bisherigen Kapsel, bei der ein Leuchtelement-Chip 15 mittels Leiterpaste 16 an einem Kühlkörper (heat sink) 17 angebracht ist. Die­ ser Kühlkörper 17 besteht aus Au-metallisiertem Cu oder Diamant, deren Wärmeleitfähigkeit wesentlich größer ist (als die des Chips). Dieser Kühlkörper 17 bildet einen Teil eines Haupt-Rahmens 40 der Kapsel 19, oder er ist durch elektrisches Schweißen oder auf mechanischem Wege mit der Oberfläche des Metall-Rahmens 40 der Kapsel 19 verbunden. Eine andere Elektrode 18 des Chips 15 ist über einen Au-Draht mit einem (Anschlußleiter-)Schaft 20 für Herausführung verbunden, der durch einen in den Metall- Rahmen 40 eingesetzten Isolator 22 gegenüber einem Schaft 21 elektrisch isoliert ist. Fig. 2 is a sectional view of a prior art capsule, in which a light-emitting element chip 15 is mounted by means of conductor paste 16 to a heat sink (heat sink) 17. The water heatsink 17 consists of Au-metallized Cu or diamond, the thermal conductivity of which is significantly greater (than that of the chip). This heat sink 17 forms part of a main frame 40 of the capsule 19 , or it is connected to the surface of the metal frame 40 of the capsule 19 by electrical welding or mechanically. Another electrode 18 of the chip 15 is connected via an Au wire to a (lead) shaft 20 for lead-out, which is electrically insulated from a shaft 21 by an insulator 22 inserted into the metal frame 40 .

Bei einem Stromfluß durch Schaft 20, Au-Draht 23, Leucht­ element-Chip 15, Leiterpaste 16, Kühlkörper 17 und Schaft 21 wird das am p-n-Übergang des Chips 15 erzeugte Licht über ein transparentes Glasfenster 24 (nach außen) abge­ strahlt, während die Wärme durch den Kühlkörper 17 von der Kapsel 19 zur Außenluft abgeführt wird.With a current flow through shaft 20 , Au wire 23 , lighting element chip 15 , conductor paste 16 , heat sink 17 and shaft 21 , the light generated at the pn junction of the chip 15 is emitted via a transparent glass window 24 (to the outside), while the heat is dissipated by the heat sink 17 from the capsule 19 to the outside air.

Für die Ausbildung der beschriebenen Anordnung mit Kühl­ körper und Überlastungsstromschutz müssen gemäß Fig. 3 ein Widerstand 9 und die den Kühlkörper 17 enthaltende Leuchtelement-Kapsel auf einer Schaltungsplatte 6 von­ einander entfernt angeordnet sein. Bei der herkömmlichen Anordnung liegt die Arbeitsspannung an einem Leiter(draht) 13 an, während der Widerstand 9 mit dem Anodenanschluß (lead) 8 des Leuchtelements (light-emitting device) verbunden ist und dessen Kathodenanschluß 10 über einen Leiter 14 an Masse liegt.For the formation of the described arrangement with cooling body and overload current protection, a resistor 9 and the lighting element capsule containing the heat sink 17 must be arranged on a circuit board 6 from each other according to FIG. 3. In the conventional arrangement, the working voltage is applied to a conductor (wire) 13 , while the resistor 9 is connected to the anode connection (lead) 8 of the light-emitting device and its cathode connection 10 is connected to ground via a conductor 14 .

Bei dieser Anordnung sind jedoch zahlreiche Montageschritte nötig, um Kühlkörper und Schutzwiderstand getrennt vonein­ ander anzuordnen, wobei die Kapsel ein großes Volumen er­ hält bzw. sperrig wird.With this arrangement, however, there are numerous assembly steps necessary to separate the heat sink and protective resistor to be arranged differently, the capsule having a large volume holds or becomes bulky.

Aufgabe der Erfindung ist damit die Schaffung einer einen Kühlkörper und eine integrierte Ansteuer-Schutzschaltung enthaltenden Kapsel für Leuchtelemente.The object of the invention is therefore to create a Heatsink and an integrated drive protection circuit containing capsule for lighting elements.

Diese Aufgabe wird bei einer Kapsel eines Lichtemissions­ oder Leuchtelements, umfassend einen Kühlkörper, der mono­ lithisch mit einem Hauptrahmen integriert ist, einen ersten (Anschlußleiter-)Schaft, einen zweiten Schaft, der durch einen elektrischen Isolator vom ersten Schaft elektrisch getrennt oder isoliert ist und in das Innere der Kapsel hineinragt, und eine Kappe mit einem transparenten Glas­ fenster, erfindungsgemäß gelöst durch eine leit­ fähige zweite Isolier- oder Trennzone, die von einer Mon­ tagefläche für das Leuchtelement in einem Substrat getrennt angeordnet ist, eine in der zweiten Zone ausgebildete leit­ fähige erste Widerstandszone, eine auf Isolier- oder Trenn­ zone und Widerstandszone aufgebrachte dünne Isolier- oder Trennschicht, durch Entfernung der Isolier- oder Trenn­ schicht nur im Kontaktbereich des Widerstands geformte erste und zweite Kontaktlöcher für den Schutzwiderstand, einen Si-Hilfs-Chip, der mit seiner metallisierten Rückseite am Kühlkörper angebracht ist, und ein mit der Montagefläche des Si-Chips verbundenes oder verlötetes Lichtemissions­ oder Leuchtelement, wobei erster und zweiter Schaft über Leiter mit erstem bzw. zweitem Kontaktloch des Schutzwider­ stands verbunden sind.This task is done with a capsule of a light emission or lighting element, comprising a heat sink, the mono lithically integrated with a main frame, a first (Connecting conductor) shaft, a second shaft through an electrical insulator from the first shaft is separated or isolated and inside the capsule protrudes, and a cap with a transparent glass window, solved according to the invention by a guide capable second isolation or separation zone, separated by a Mon day area for the lighting element separated in a substrate is arranged, a lead formed in the second zone capable first resistance zone, one on isolation or separation zone and resistance zone applied thin insulating or Separating layer, by removing the insulating or separating layer formed only in the contact area of the resistor first and second contact holes for the protective resistor, a silicon auxiliary chip with its metallized back is attached to the heat sink, and one with the mounting surface of the Si chip connected or soldered light emission or lighting element, the first and second shaft over Conductor with the first or second contact hole of the protective resistor stands are connected.

Im folgenden ist eine bevorzugte Ausführungsform der Er­ findung im Vergleich zum Stand der Technik anhand der Zeichnung näher erläutert. Es zeigen:The following is a preferred embodiment of the Er Compared to the prior art based on the Drawing explained in more detail. Show it:

Fig. 1 ein Schaltbild einer bisherigen Überlastungsstrom- Schutzschaltung für Lichtemissions- oder Leucht­ elemente, Fig. 1 is a diagram of elements of a previous Überlastungsstrom- protection circuit for light emitting or light,

Fig. 2 eine Schnittansicht einer bisherigen Kapsel (package) mit einem Leuchtelement, Fig. 2 is a sectional view of a prior art capsule (package) having a light-emitting element,

Fig. 3 eine schematische Darstellung einer Ausgestal­ tung nach Fig. 1 unter Verwendung der bisheri­ gen Kapsel gemäß Fig. 2, Fig. 3 is a schematic representation of a Ausgestal processing of FIG. 1 using the gene bisheri capsule according to Fig. 2,

Fig. 4 eine Schnittansicht eines Si-Hilfs-Chips gemäß der Erfindung und Fig. 4 is a sectional view of an auxiliary Si chip according to the invention and

Fig. 5 eine Schnittansicht einer den Si-Hilfs-Chip ent­ haltenden Kapsel gemäß der Erfindung. Fig. 5 is a sectional view of a capsule containing the Si auxiliary chip ent according to the invention.

Die Fig. 1 bis 3 sind eingangs bereits erläutert worden. Figs. 1 to 3 have been already explained.

Gemäß Fig. 4 ist ein Si-Einkristallsubstrat 25 eines hohen spezifischen Widerstands vorgesehen. Darauf wird zuerst eine leitende zweite Isolier- oder Trennzone 31 ausge­ bildet, deren Leitfähigkeitstyp demjenigen einer ersten leitfähigen Isolier- oder Trennzone entgegengesetzt ist. In der Trennzone 31 wird durch Diffusion eine Widerstands­ zone 32 desselben Leitfähigkeitstyps wie bei der ersten leitenden Zone ausgebildet. Auf der Gesamtoberfläche des Substrats 25 wird SiO2 (Siliziumdioxid) oder Si3N4 (Sili­ ziumnitrid) abgeschieden. SiO2-Zonen nur für einen Schutz­ widerstand sowie eine Montagefläche für ein Leuchtelement werden auf herkömmlichem Wege photolithographisch ausge­ ätzt. According to Fig. 4, a single crystal Si substrate 25 is of a high resistivity is provided. Thereupon a conductive second isolation or separation zone 31 is first formed, the conductivity type of which is opposite to that of a first conductive isolation or isolation zone. In the separation zone 31 , a resistance zone 32 of the same conductivity type as in the first conductive zone is formed by diffusion. SiO 2 (silicon dioxide) or Si 3 N 4 (silicon nitride) is deposited on the entire surface of the substrate 25 . SiO 2 zones only for protective resistance and a mounting surface for a light-emitting element are etched out in a conventional manner by photolithography.

Sodann wird Al oder Au nach der Vakuumabscheidungs- oder -aufdampfmethode auf den geätzten SiO2-Zonen abgeschieden. Mit Ausnahme von Kontaktlöchern 30, 30′ für den Schutz­ widerstand der Widerstandszone 32 und der Montagefläche 50 für das Leuchtelement wird die SiO2-Schicht vollstän­ dig weggeätzt; hierauf wird eine mit Al oder Au vakuum­ bedampfte Metallschicht 7 an der Rückseite des Substrats 25 angebracht. Hierbei ist darauf zu achten, daß die Mon­ tagefläche 50 für das Leuchtelement größer ist als das Leuchtelement selbst.Then Al or Au is deposited on the etched SiO 2 zones by the vacuum deposition or vapor deposition method. With the exception of contact holes 30 , 30 'for the protection resistance of the resistance zone 32 and the mounting surface 50 for the lighting element, the SiO 2 layer is completely etched away dig; thereupon a metal layer 7 vapor-deposited with Al or Au is attached to the back of the substrate 25 . It should be ensured that the Mon day surface 50 for the lighting element is larger than the lighting element itself.

Fig. 5 ist eine Schnittansicht einer einen Si-Hilfs-Chip enthaltenden Kapsel gemäß der Erfindung. Diese besitzt denselben Aufbau wie der herkömmliche TO 5- oder TO 18-Typ insofern als ein Kühlkörper 17 und ein Schaft 21 Teile des Kapsel-Hauptrahmens darstellen, ein durch einen Iso­ lator 22 vom Schaft 21 elektrisch getrennter Schaft 20 in die Kapsel hineinragt und eine Kappe 60 ein transparen­ tes Glasfenster 24, durch welches Licht abstrahlbar ist, aufweist. Fig. 5 is a sectional view of a capsule containing a Si auxiliary chip according to the invention. This has the same structure as the conventional TO 5 or TO 18 type in that a heat sink 17 and a shaft 21 represent parts of the capsule main frame, a shaft 20 which is electrically isolated from the shaft 21 by an insulator 22 and projects into the capsule Cap 60 has a transparent glass window 24 through which light can be emitted.

Nach der Herstellung wird der Si-Chip gemäß Fig. 4 bei nicht aufgesetzter Metallkappe 60 an seiner Rückseite 7 durch Ultraschallschweißung oder mittels eines eutekti­ schen Au-In-Vorformlings an der Seite des Kühlkörpers 17 angebracht, nachdem der Kapsel-Hauptrahmen 40 vorher er­ wärmt wurde. Sodann wird die Kathode des Lichtemissions­ oder Leuchtelements 15 mittels einer Leiterpaste 51 hoher thermischer und elektrischer Leitfähigkeit an der Montagefläche 50 (Fig. 4) angebracht. Anstelle der Lei­ terpaste kann ein Au-Vorformling benutzt werden. Nach der Anbringung des Leuchtelements am Si-Hilfs-Chip er­ folgt ein Verdrahtungs-Anschluß- oder -Lötvorgang.After manufacture, the Si chip according to FIG. 4 is attached to the rear side 7 by a metal cap 60 that is not attached by ultrasonic welding or by means of a eutectic Au-In preform on the side of the heat sink 17 after the capsule main frame 40 has previously warmed it has been. The cathode of the light emission or lighting element 15 is then attached to the mounting surface 50 ( FIG. 4) by means of a conductor paste 51 of high thermal and electrical conductivity. An Au preform can be used instead of the conductor paste. After attaching the light element to the Si auxiliary chip, he follows a wiring connection or soldering process.

Der Endteil 62 des Schafts 20 wird in der Kapsel 19 mit­ tels eines Au-Drahts 28 am ersten Kontaktloch 30 des Schutzwiderstands angeschlossen bzw. dort angelötet (vgl. Fig. 4). Die Anode des Leuchtelements 15 wird ebenfalls mittels eine Au-Drahts (-Leiters) 27 am zweiten Kontakt­ loch 30′ angeschlossen bzw. dort angelötet, worauf die Leiteranschlußvorgänge abgeschlossen sind. Hierauf wird die Kapsel mittels der Kappe 60 in einer Stickstoff­ atmosphäre so verkapselt, daß das in der Kapsel 19 ein­ geschlossene gasförmige N2 eine Oxidation der Metall- Leiter(drähte) verhindert.The end part 62 of the shaft 20 is connected in the capsule 19 by means of an Au wire 28 to the first contact hole 30 of the protective resistor or soldered there (see FIG. 4). The anode of the light-emitting element 15 is also connected by means of an Au wire (conductor) 27 to the second contact hole 30 'or soldered there, whereupon the conductor connection processes are completed. The capsule is then encapsulated by means of the cap 60 in a nitrogen atmosphere in such a way that the closed gaseous N 2 in the capsule 19 prevents oxidation of the metal conductors (wires).

Wenn dann die Arbeitsspannung an den Schaft 20 angelegt und der Schaft 21 mit Masse verbunden wird, wird das am p-n-Übergang des Leuchtelements 15 erzeugte Licht über das Glasfenster 24 abgestrahlt.If the working voltage is then applied to the shaft 20 and the shaft 21 is connected to ground, the light generated at the pn junction of the lighting element 15 is emitted via the glass window 24 .

Die Wärmeleitfähigkeiten von GaAs und InP als die Werk­ stoffe des Leuchtelements betragen 0,46 W/cm°C bzw. 0,68 W/ cm°C bei Raumtemperatur, während die Wärmeleitfähigkeit von Si 1,5 W/cm°C beträgt. Hierdurch wird belegt, daß die Verwendung von Si als Kühlkörper (oder Wärmesenke) vor­ teilhafter ist als die Verwendung von GaAs oder InP. Ein Läppen des Si-Substrats auf eine Dicke von 200-300 µm reicht für die Verwendung des Si-Hilfs-Chips hierfür aus.The thermal conductivity of GaAs and InP as the factory materials of the lighting element are 0.46 W / cm ° C or 0.68 W / cm ° C at room temperature while the thermal conductivity of Si is 1.5 W / cm ° C. This proves that the Use of Si as a heat sink (or heat sink) before is more partial than the use of GaAs or InP. A Lapping the Si substrate to a thickness of 200-300 µm is sufficient for the use of the Si auxiliary chip for this.

Der erfindungsgemäß verwendete Si-Hilfs-Chip kann als Kühlkörper für das Leuchtelement und außerdem auch als Schutzwiderstand dienen, so daß die Verwendung eines ge­ trennten Widerstands und der Anschluß- oder Lötvorgang an der Schaltungsplatte vermieden werden und damit der Zeitaufwand für die Montage verringert wird.The Si auxiliary chip used according to the invention can be used as Heatsink for the lighting element and also as Protective resistor are used so that the use of a ge separated resistance and the connection or soldering process be avoided on the circuit board and thus the Installation time is reduced.

Claims (1)

Kapsel eines Lichtemissions- oder Leuchtelements, um­ fassend einen Kühlkörper (17), der monolithisch mit einem Hauptrahmen (40) integriert ist, einen ersten (Anschluß­ leiter-)Schaft (21), einen zweiten Schaft (20), der durch einen elektrischen Isolator (22) vom ersten Schaft (21) elektrisch getrennt oder isoliert ist und in das Innere der Kapsel (19) hineinragt, und eine Kappe (60) mit einem transparenten Glasfenster (24), gekennzeichnet durch
eine leitfähige zweite Isolier- oder Trennzone (31), die von einer Montagefläche (50) für das Leuchtelement in einem Substrat getrennt angeordnet ist,
eine in der zweiten Zone (31) ausgebildete leitfähige erste Widerstandszone (32),
eine auf Isolier- oder Trennzone (31) und Widerstands­ zone (32) aufgebrachte dünne Isolier- oder Trennschicht (29),
durch Entfernung der Isolier- oder Trennschicht (29) nur im Kontaktbereich (32) des Widerstands geformte erste und zweite Kontaktlöcher (30, 30′) für den Schutzwider­ stand,
einen Si-Hilfs-Chip, der mit seiner metallisierten Rückseite (7) am Kühlkörper (17) angebracht ist, und
ein mit der Montagefläche (50) des Si-Chips verbunde­ nes oder verlötetes Lichtemissions- oder Leuchtelement (15),
wobei erster und zweiter Schaft (21, 20) über Leiter mit erstem bzw. zweitem Kontaktloch (30, 30′) des Schutz­ widerstands verbunden sind.Capsule of a light emission or lighting element, comprising a heat sink ( 17 ), which is monolithically integrated with a main frame ( 40 ), a first (connection conductor) shaft ( 21 ), a second shaft ( 20 ) through an electrical insulator ( 22 ) is electrically separated or insulated from the first shaft ( 21 ) and projects into the interior of the capsule ( 19 ), and a cap ( 60 ) with a transparent glass window ( 24 ), characterized by
a conductive second isolation or separation zone ( 31 ) which is arranged separately from a mounting surface ( 50 ) for the lighting element in a substrate,
a conductive first resistance zone ( 32 ) formed in the second zone ( 31 ),
a thin insulating or separating layer ( 29 ) applied to the insulating or separating zone ( 31 ) and resistance zone ( 32 ),
by removing the insulating or separating layer ( 29 ) only in the contact region ( 32 ) of the resistor formed first and second contact holes ( 30 , 30 ') stood for the protective resistor,
a Si auxiliary chip, which is attached with its metallized back ( 7 ) to the heat sink ( 17 ), and
a light-emitting or luminous element ( 15 ) connected or soldered to the mounting surface ( 50 ) of the Si chip,
wherein the first and second shafts ( 21 , 20 ) are connected via conductors to the first and second contact holes ( 30 , 30 ') of the protective resistor.
DE19873735818 1986-11-04 1987-10-22 CAPSULE OF A LIGHTING ELEMENT WITH INTEGRATED RADIATOR AND OVERLOAD CURRENT PROTECTION CIRCUIT Withdrawn DE3735818A1 (en)

Applications Claiming Priority (1)

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KR1019860009285A KR890002811B1 (en) 1986-11-04 1986-11-04 Laser diode

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KR (1) KR890002811B1 (en)
DE (1) DE3735818A1 (en)
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GB (1) GB2197126A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4019091A1 (en) * 1990-06-15 1991-12-19 Battelle Institut E V HEAT DISCHARGE DEVICE FOR SEMICONDUCTOR COMPONENTS AND METHOD FOR THE PRODUCTION THEREOF
DE4205789A1 (en) * 1992-02-26 1993-09-02 Abb Patent Gmbh Light source for indicating switching state - has protection for limiting current formed by trimmable layer resistor on alumina substrate, together with LED

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930015139A (en) * 1991-12-18 1993-07-23 이헌조 Manufacturing method of light emitting diode capable of changing light intensity
JPH08264898A (en) * 1995-03-23 1996-10-11 Mitsubishi Electric Corp Semiconductor laser device
DE19612388C2 (en) * 1996-03-28 1999-11-04 Siemens Ag Integrated semiconductor circuit, in particular an optoelectronic component with overvoltage protection
KR20030049211A (en) * 2001-12-14 2003-06-25 서오텔레콤(주) Led
DE102006015335B4 (en) * 2006-04-03 2013-05-02 Ivoclar Vivadent Ag Semiconductor radiation source and light curing device
GB2479120A (en) * 2010-03-26 2011-10-05 Cambridge Display Tech Ltd Organic electrolumunescent device having conductive layer connecting metal over well defining layer and cathode
FR3001357B1 (en) * 2013-01-22 2015-02-06 Sylumis MECHANICAL FASTENING AND ELECTRICAL CONNECTION BRACKET OF LIGHT EMITTING DIODES

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2542174A1 (en) * 1974-09-21 1976-07-22 Nippon Electric Co SEMI-CONDUCTOR LASER DEVICE
US4316208A (en) * 1977-06-17 1982-02-16 Matsushita Electric Industrial Company, Limited Light-emitting semiconductor device and method of fabricating same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL178376C (en) * 1978-06-19 1986-03-03 Philips Nv COUPLING ELEMENT WITH A LIGHT SOURCE AND A LENS.
FR2445617A1 (en) * 1978-12-28 1980-07-25 Ibm France IMPROVED BREAKDOWN VOLTAGE RESISTANCE ACHIEVED BY DOUBLE ION IMPLANTATION IN A SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF
GB2098714B (en) * 1980-06-04 1984-08-22 Tranilamp Ltd Led cluster assembly
JPS6081879A (en) * 1983-10-11 1985-05-09 Nec Corp Light emitting diode
JPS60186076A (en) * 1984-03-05 1985-09-21 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light emitting device
JPS61107783A (en) * 1984-10-30 1986-05-26 Matsushita Electric Ind Co Ltd Semiconductor laser device
DE3534744A1 (en) * 1985-09-28 1987-04-09 Standard Elektrik Lorenz Ag LASER DEVICE WITH STABILIZED OUTPUT

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2542174A1 (en) * 1974-09-21 1976-07-22 Nippon Electric Co SEMI-CONDUCTOR LASER DEVICE
US4316208A (en) * 1977-06-17 1982-02-16 Matsushita Electric Industrial Company, Limited Light-emitting semiconductor device and method of fabricating same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4019091A1 (en) * 1990-06-15 1991-12-19 Battelle Institut E V HEAT DISCHARGE DEVICE FOR SEMICONDUCTOR COMPONENTS AND METHOD FOR THE PRODUCTION THEREOF
US5223747A (en) * 1990-06-15 1993-06-29 Battelle-Institut E.V. Heat dissipating device
DE4205789A1 (en) * 1992-02-26 1993-09-02 Abb Patent Gmbh Light source for indicating switching state - has protection for limiting current formed by trimmable layer resistor on alumina substrate, together with LED

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JPS63122293A (en) 1988-05-26
FR2606211B1 (en) 1991-07-12
KR880006772A (en) 1988-07-25
KR890002811B1 (en) 1989-07-31
FR2606211A1 (en) 1988-05-06
GB2197126A (en) 1988-05-11
GB8725476D0 (en) 1987-12-02

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