JPS6081879A - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- JPS6081879A JPS6081879A JP58189494A JP18949483A JPS6081879A JP S6081879 A JPS6081879 A JP S6081879A JP 58189494 A JP58189494 A JP 58189494A JP 18949483 A JP18949483 A JP 18949483A JP S6081879 A JPS6081879 A JP S6081879A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- diode
- chip
- series
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/40—Details of LED load circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Led Device Packages (AREA)
Abstract
Description
【発明の詳細な説明】 本発明は発光ダイオードに関する。[Detailed description of the invention] The present invention relates to light emitting diodes.
発光ダイオードはエネルギーギャップの大きいGaPや
GaAsPなどの化合物半導体のp−n接合に順電流を
流し、接合を越えて注入された少数キャリアが再結合す
る際放出されるエネルギーがE、、、hiの関係から可
視領域の光子となることを利用するもので、長寿命、篩
信頼度であるとともに。In a light emitting diode, a forward current is passed through a p-n junction of a compound semiconductor such as GaP or GaAsP, which has a large energy gap, and the energy released when minority carriers injected across the junction recombine is E,...hi. It utilizes the fact that photons are in the visible range due to the relationship, and has a long life and high sieve reliability.
小型で発熱が少ないため、他の半導体部品と高密度に実
装することが可能であるなどの特長により、各種電子機
器に多用されている。使用に際しては数mA程匿の直流
電流をダイオードの順方向に流し、p−n接合からの可
視光の発光全利用する。Because they are small and generate little heat, they can be mounted in high density with other semiconductor components, so they are widely used in various electronic devices. In use, a direct current of several mA is passed in the forward direction of the diode, and all visible light emitted from the pn junction is utilized.
用途は多様であるが大手がパイロ、トランプのような動
作表示である。したがって、従来の豆電球によるパイロ
ットランプの置換が主となるため。It has a variety of uses, but the major ones are pyro and action displays like playing cards. Therefore, the main purpose is to replace the pilot lamp with a conventional miniature light bulb.
交流電源への直結が可能であること金強くめられる。It is highly recommended that it can be directly connected to an AC power source.
しかし、発光ダイオードでは最適な発光特性を得られる
ことに重点を置くため、一般に逆方向耐圧が数ボルトと
低いうえ、逆電#、全流すとp−n接合が劣化し、寿命
が著しく短縮される。そのため、交流電源に直接接続し
、発光ダイオード自身の整流特性により順電流だけt通
流するよう動作させることには無理がある。However, because light-emitting diodes focus on obtaining optimal light-emitting characteristics, their reverse breakdown voltage is generally as low as a few volts, and the p-n junction deteriorates when full reverse current flows, resulting in a significantly shortened lifespan. Ru. Therefore, it is impossible to directly connect the light emitting diode to an alternating current power source and operate it so that only t of forward current flows through the light emitting diode due to its own rectifying characteristics.
これらのことから、一般には直流電源全準備するかまた
は逆阻止能力を与えるためシリコン整流ダイオードを順
方向に直列に接続するなどの方法がとられている。しか
し、これでは従来の豆電球を手がるに置換する目的に沿
わず、発光ダイオード全点灯するための余剰な手段を要
する欠点があった・
不発明はこのような余剰な手段を講することなく、交流
電源で点灯する豆電球を直接置換することのできる発光
ダイオード全提供することにある。For these reasons, methods are generally used such as preparing a full DC power supply or connecting silicon rectifier diodes in series in the forward direction to provide reverse blocking capability. However, this did not meet the purpose of replacing conventional miniature light bulbs, and had the disadvantage of requiring extra means to turn on all of the light emitting diodes.The inventiveness is to take such extra means. The purpose is to provide all light emitting diodes that can directly replace miniature light bulbs that are lit using AC power.
本発明によれば発光ダイオードチップと整流ダイオード
チップと抵抗器とを直列に接続し、1個の容器に収容す
ることにxL交流電源には接接続して動作させることが
できること全特徴とする発光ダイオードが得られる。According to the present invention, a light emitting diode chip, a rectifier diode chip, and a resistor are connected in series, housed in one container, and can be operated by being connected to an xL AC power source. A diode is obtained.
以下図面に従い不発明につき詳細に説明する。The invention will be described in detail below with reference to the drawings.
第1図は従来から用いられている発光ダイオード点灯回
路である。交流電源4の電圧がシリコン整流ダイオード
3お工び発光ダイオード5の順方同電圧となる1/2サ
イクル間は、電源電圧、シリコン整流ダイオード3およ
び発光ダイオード5の順電圧降下並びに電流制限抵抗2
の数値によって定まるI@電流が発光ダイオード5に流
れ1発光6を得る。また、交#、電源4の電圧がシリコ
ン整流ダイオード3および発光ダイオード5の逆方同電
圧となる1/2サイクル間は、この電圧に対して十分な
阻止特性を有するシリコン整流ダイオード3の逆阻止特
性により電流は阻止され、発光ダイオード5は逆電流か
ら保護される。この場合、電流制限抵抗2およびシリコ
ン整流ダイオード3は発光ダイオード5とは独立の部品
として外付けされなければならず、組立などの余剰な工
数全必要とする。FIG. 1 shows a conventionally used light emitting diode lighting circuit. During the 1/2 cycle in which the voltage of the AC power supply 4 becomes the same forward voltage of the silicon rectifier diode 3 and the light emitting diode 5, the power supply voltage, the forward voltage drop of the silicon rectifier diode 3 and the light emitting diode 5, and the current limiting resistor 2
An I@ current determined by the value of flows through the light emitting diode 5 to obtain one light emission 6. In addition, during the 1/2 cycle in which the voltage of the AC power source 4 becomes the same voltage in the reverse direction of the silicon rectifier diode 3 and the light emitting diode 5, the reverse blocking of the silicon rectifier diode 3, which has sufficient blocking characteristics against this voltage, is applied. Due to the characteristic, the current is blocked and the light emitting diode 5 is protected from reverse current. In this case, the current limiting resistor 2 and the silicon rectifier diode 3 must be externally attached as components independent of the light emitting diode 5, which requires all the unnecessary man-hours such as assembly.
第2図は不発明の構成図である0発元ダイオード5とシ
リコン整流ダイオード3とは互いに順方向に直列に接続
され、さらに電流制限抵抗2がこれらと直列に接続され
ている。またこれらは1つの容器7に収容されている。FIG. 2 is a block diagram of a non-inventive structure. A zero source diode 5 and a silicon rectifier diode 3 are connected in series with each other in the forward direction, and a current limiting resistor 2 is further connected in series with them. Further, these are housed in one container 7.
つ′−1′り、容器7に収容された発光ダイオード5を
含む2端子の素子は第1図と同様、面接交流電源に接続
し点灯させることのできる発光素子を提供する。Similarly to FIG. 1, the two-terminal element including the light emitting diode 5 housed in the container 7 provides a light emitting element that can be connected to an AC power source and turned on.
第4図は本発明による発光ダイオード全構成するための
構造の一実施例である。FIG. 4 shows an embodiment of a structure for composing the entire light emitting diode according to the present invention.
発光ダイオードの容器7は一般に比較的小型である0発
光分布特性を良好に保つためには発光ダイオードチップ
5は容器7の断面の中心に設置しなければならないが、
その結果、シリコン整流ダイオ−トチ、ブ3の設置でき
る゛場所の確保が困難な場合がある。そこで、第4図の
実施例においては、カソード・リード8の上にまずシリ
コン整流ダイオードチップ3を設置し、さらにその上に
発光ダイオードチップ5を設置したものである。The light emitting diode container 7 is generally relatively small. In order to maintain good emission distribution characteristics, the light emitting diode chip 5 must be placed at the center of the cross section of the container 7.
As a result, it may be difficult to secure a place where the silicon rectifier diode circuit 3 can be installed. Therefore, in the embodiment shown in FIG. 4, a silicon rectifier diode chip 3 is first placed on the cathode lead 8, and then a light emitting diode chip 5 is placed on top of it.
しかし、不発明の要旨葡吾わないかぎり、第4図と異な
る構造としても差支えないことは改めて説明f、要しな
い0以上、詳述した通り、不発明によれば電流制限抵抗
、シリコン整流ダイオードおよびこれら全取付けるため
の基板並びにこれらの組立などの余剰な手段?講するこ
とな〈従来の豆電球e[接かつ手軽に発光ダイオードで
置換することができ組立上数並びにコスト低減に効果を
上げることができるのである。However, as long as the gist of non-invention does not go away, it is acceptable to have a structure different from that shown in Figure 4, which is unnecessary. And redundant means such as a board to attach all of these and assembly of these? It is possible to directly and easily replace the conventional miniature light bulb with a light-emitting diode, which is effective in reducing the number of assembly steps and costs.
なお、第3図は従来の発行ダイオードの構造を示す参考
図である。Note that FIG. 3 is a reference diagram showing the structure of a conventional light emitting diode.
5−5-
第1図は交流電源で発光ダイオード全点灯させるための
辿常の基本回路図、第2図は不発明の構成を示す回路図
、第3図は従来の発光ダイオードの構造全7バす参考概
略図、第4図は不発明による発光ダイオードを構成する
だめの構造の一実施例を示す概略図。
l・・・・・・スイッチ、2・・・・・・電流制限抵抗
、30.・、・・シリコン整流ダイオード、4・・・・
・・交流電源、5・・・・・・Kffiダイオード%6
・・・・・・発光ダイオードからの発光、7・・・・・
・開光ダイオード容器、8・・・・・・カソードリード
、9・・・・・・アノードリード% 10・・・・・・
結線。
6 −
第3図
第4図Figure 1 is a conventional basic circuit diagram for lighting up all of the light emitting diodes using an AC power supply, Figure 2 is a circuit diagram showing an uninvented configuration, and Figure 3 is a reference outline of all 7 conventional light emitting diode structures. FIG. 4 is a schematic diagram showing an embodiment of the structure of a light emitting diode according to the invention. l...Switch, 2...Current limiting resistor, 30. ...Silicon rectifier diode, 4...
...AC power supply, 5...Kffi diode%6
...Light emission from a light emitting diode, 7...
- Light-opening diode container, 8...Cathode lead, 9...Anode lead% 10...
Wire connection. 6 - Figure 3 Figure 4
Claims (1)
と全直列に接続し、これら’に1個の容器に収容したこ
とを特徴とする発光ダイオード。A light emitting diode characterized in that a light emitting diode chip, a rectifier diode chip, and a resistor are all connected in series and housed in one container.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58189494A JPS6081879A (en) | 1983-10-11 | 1983-10-11 | Light emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58189494A JPS6081879A (en) | 1983-10-11 | 1983-10-11 | Light emitting diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6081879A true JPS6081879A (en) | 1985-05-09 |
Family
ID=16242200
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58189494A Pending JPS6081879A (en) | 1983-10-11 | 1983-10-11 | Light emitting diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6081879A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2606211A1 (en) * | 1986-11-04 | 1988-05-06 | Samsung Semiconductor Tele | Housing for electroluminescent component with integrated radiator circuit affording protection against overcurrent |
-
1983
- 1983-10-11 JP JP58189494A patent/JPS6081879A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2606211A1 (en) * | 1986-11-04 | 1988-05-06 | Samsung Semiconductor Tele | Housing for electroluminescent component with integrated radiator circuit affording protection against overcurrent |
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