DE3703582C1 - Bestrahlungsmaske zur lithographischen Erzeugung von Mustern - Google Patents

Bestrahlungsmaske zur lithographischen Erzeugung von Mustern

Info

Publication number
DE3703582C1
DE3703582C1 DE3703582A DE3703582A DE3703582C1 DE 3703582 C1 DE3703582 C1 DE 3703582C1 DE 3703582 A DE3703582 A DE 3703582A DE 3703582 A DE3703582 A DE 3703582A DE 3703582 C1 DE3703582 C1 DE 3703582C1
Authority
DE
Germany
Prior art keywords
carrier layer
radiation
irradiation mask
patterns
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3703582A
Other languages
German (de)
English (en)
Inventor
Heinz Kraus
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dr Johannes Heidenhain GmbH
Original Assignee
Dr Johannes Heidenhain GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dr Johannes Heidenhain GmbH filed Critical Dr Johannes Heidenhain GmbH
Priority to DE3703582A priority Critical patent/DE3703582C1/de
Priority to DE8717448U priority patent/DE8717448U1/de
Priority to DE8787117249T priority patent/DE3785331D1/de
Priority to EP87117249A priority patent/EP0278076B1/de
Priority to JP63024066A priority patent/JPS63202022A/ja
Priority to US07/155,070 priority patent/US4950568A/en
Application granted granted Critical
Publication of DE3703582C1 publication Critical patent/DE3703582C1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
DE3703582A 1987-02-06 1987-02-06 Bestrahlungsmaske zur lithographischen Erzeugung von Mustern Expired DE3703582C1 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE3703582A DE3703582C1 (de) 1987-02-06 1987-02-06 Bestrahlungsmaske zur lithographischen Erzeugung von Mustern
DE8717448U DE8717448U1 (de) 1987-02-06 1987-02-06 Bestrahlungsmaske zur lithographischen Erzeugung von Mustern
DE8787117249T DE3785331D1 (de) 1987-02-06 1987-11-24 Bestrahlungsmaske zur lithographischen erzeugung von mustern.
EP87117249A EP0278076B1 (de) 1987-02-06 1987-11-24 Bestrahlungsmaske zur lithographischen Erzeugung von Mustern
JP63024066A JPS63202022A (ja) 1987-02-06 1988-02-05 リゾグラフイによるパターンの形成のための露光マスク
US07/155,070 US4950568A (en) 1987-02-06 1988-02-08 Radiation mask for the lithographic production of patterns

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3703582A DE3703582C1 (de) 1987-02-06 1987-02-06 Bestrahlungsmaske zur lithographischen Erzeugung von Mustern

Publications (1)

Publication Number Publication Date
DE3703582C1 true DE3703582C1 (de) 1988-04-07

Family

ID=6320354

Family Applications (3)

Application Number Title Priority Date Filing Date
DE3703582A Expired DE3703582C1 (de) 1987-02-06 1987-02-06 Bestrahlungsmaske zur lithographischen Erzeugung von Mustern
DE8717448U Expired DE8717448U1 (de) 1987-02-06 1987-02-06 Bestrahlungsmaske zur lithographischen Erzeugung von Mustern
DE8787117249T Expired - Fee Related DE3785331D1 (de) 1987-02-06 1987-11-24 Bestrahlungsmaske zur lithographischen erzeugung von mustern.

Family Applications After (2)

Application Number Title Priority Date Filing Date
DE8717448U Expired DE8717448U1 (de) 1987-02-06 1987-02-06 Bestrahlungsmaske zur lithographischen Erzeugung von Mustern
DE8787117249T Expired - Fee Related DE3785331D1 (de) 1987-02-06 1987-11-24 Bestrahlungsmaske zur lithographischen erzeugung von mustern.

Country Status (4)

Country Link
US (1) US4950568A (enExample)
EP (1) EP0278076B1 (enExample)
JP (1) JPS63202022A (enExample)
DE (3) DE3703582C1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1089128A3 (en) * 1999-09-30 2001-05-02 Kabushiki Kaisha Toshiba Exposure mask, exposure mask manufacturing method, and semiconductor device manufacturing method using exposure mask
US7063921B2 (en) 2002-09-27 2006-06-20 Infineon Technologies Ag Photomask, in particular alternating phase shift mask, with compensation structure

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2796552B2 (ja) * 1988-12-12 1998-09-10 日本電信電話株式会社 Ｘ線リソグラフィー用マスク
US5155749A (en) * 1991-03-28 1992-10-13 International Business Machines Corporation Variable magnification mask for X-ray lithography
JPH0567561A (ja) * 1991-09-10 1993-03-19 Canon Inc Ｘ線マスク基板とその製造方法およびｘ線マスク
JP2746098B2 (ja) * 1994-01-19 1998-04-28 日本電気株式会社 電子ビーム描画用アパーチャおよび電子ビーム描画方法
US5951881A (en) * 1996-07-22 1999-09-14 President And Fellows Of Harvard College Fabrication of small-scale cylindrical articles
US6753131B1 (en) 1996-07-22 2004-06-22 President And Fellows Of Harvard College Transparent elastomeric, contact-mode photolithography mask, sensor, and wavefront engineering element
JP2007024589A (ja) * 2005-07-13 2007-02-01 Hitachi Ltd 気体流量計測装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3150056A1 (de) * 1980-12-17 1982-07-15 Westinghouse Electric Corp., 15222 Pittsburgh, Pa. "maske zur verwendung bei lithopraphischen verfahren"
DE3232499A1 (de) * 1982-09-01 1984-03-01 Philips Patentverwaltung Gmbh, 2000 Hamburg Maske fuer die mustererzeugung in lackschichten mittels roentgenstrahllithographie und verfahren zu ihrer herstellung
DE3427449A1 (de) * 1983-07-27 1985-02-07 Mitsubishi Denki K.K., Tokio/Tokyo Maske fuer die roentgenstrahllithographie
DE3425063A1 (de) * 1984-07-07 1986-02-06 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Maske fuer die roentgenlithographie

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5321271B2 (enExample) * 1972-09-14 1978-07-01
JPS54141571A (en) * 1978-04-26 1979-11-02 Dainippon Printing Co Ltd Mask for soft xxray lithograph
US4260670A (en) * 1979-07-12 1981-04-07 Western Electric Company, Inc. X-ray mask
JPS59191332A (ja) * 1983-04-14 1984-10-30 Seiko Epson Corp Ｘ線マスク
GB8723000D0 (en) * 1987-09-30 1987-11-04 Antibioticos Sa Expression vectors

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3150056A1 (de) * 1980-12-17 1982-07-15 Westinghouse Electric Corp., 15222 Pittsburgh, Pa. "maske zur verwendung bei lithopraphischen verfahren"
DE3232499A1 (de) * 1982-09-01 1984-03-01 Philips Patentverwaltung Gmbh, 2000 Hamburg Maske fuer die mustererzeugung in lackschichten mittels roentgenstrahllithographie und verfahren zu ihrer herstellung
DE3427449A1 (de) * 1983-07-27 1985-02-07 Mitsubishi Denki K.K., Tokio/Tokyo Maske fuer die roentgenstrahllithographie
DE3425063A1 (de) * 1984-07-07 1986-02-06 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Maske fuer die roentgenlithographie

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1089128A3 (en) * 1999-09-30 2001-05-02 Kabushiki Kaisha Toshiba Exposure mask, exposure mask manufacturing method, and semiconductor device manufacturing method using exposure mask
US7063921B2 (en) 2002-09-27 2006-06-20 Infineon Technologies Ag Photomask, in particular alternating phase shift mask, with compensation structure
DE10245159B4 (de) * 2002-09-27 2006-10-12 Infineon Technologies Ag Photomaske, insbesondere alternierende Phasenmaske, mit Kompensationsstruktur

Also Published As

Publication number Publication date
JPH0351287B2 (enExample) 1991-08-06
JPS63202022A (ja) 1988-08-22
EP0278076A2 (de) 1988-08-17
DE3785331D1 (de) 1993-05-13
US4950568A (en) 1990-08-21
DE8717448U1 (de) 1988-12-29
EP0278076A3 (en) 1990-04-25
EP0278076B1 (de) 1993-04-07

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Legal Events

Date Code Title Description
8100 Publication of the examined application without publication of unexamined application
D1 Grant (no unexamined application published) patent law 81
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee