DE3701488C2 - - Google Patents

Info

Publication number
DE3701488C2
DE3701488C2 DE3701488A DE3701488A DE3701488C2 DE 3701488 C2 DE3701488 C2 DE 3701488C2 DE 3701488 A DE3701488 A DE 3701488A DE 3701488 A DE3701488 A DE 3701488A DE 3701488 C2 DE3701488 C2 DE 3701488C2
Authority
DE
Germany
Prior art keywords
layer
recording material
barrier layer
photoconductor
properties
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3701488A
Other languages
German (de)
English (en)
Other versions
DE3701488A1 (de
Inventor
Shuji Tokio/Tokyo Jp Yoshizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61040705A external-priority patent/JPS62198865A/ja
Priority claimed from JP61040707A external-priority patent/JPS62198867A/ja
Priority claimed from JP61040708A external-priority patent/JPS62198868A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3701488A1 publication Critical patent/DE3701488A1/de
Application granted granted Critical
Publication of DE3701488C2 publication Critical patent/DE3701488C2/de
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/14—Inert intermediate or cover layers for charge-receiving layers
    • G03G5/142—Inert intermediate layers
    • G03G5/144—Inert intermediate layers comprising inorganic material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
DE19873701488 1986-02-26 1987-01-20 Elektrophotographisches lichtempfindliches element Granted DE3701488A1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61040705A JPS62198865A (ja) 1986-02-26 1986-02-26 電子写真感光体
JP61040707A JPS62198867A (ja) 1986-02-26 1986-02-26 電子写真感光体
JP61040708A JPS62198868A (ja) 1986-02-26 1986-02-26 電子写真感光体

Publications (2)

Publication Number Publication Date
DE3701488A1 DE3701488A1 (de) 1987-08-27
DE3701488C2 true DE3701488C2 (https=) 1990-04-05

Family

ID=27290576

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19873701488 Granted DE3701488A1 (de) 1986-02-26 1987-01-20 Elektrophotographisches lichtempfindliches element

Country Status (2)

Country Link
US (1) US4704343A (https=)
DE (1) DE3701488A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4845001A (en) * 1986-04-30 1989-07-04 Canon Kabushiki Kaisha Light receiving member for use in electrophotography with a surface layer comprising non-single-crystal material containing tetrahedrally bonded boron nitride
JP3861069B2 (ja) * 2003-05-02 2006-12-20 有限会社真空実験室 加熱装置及び加熱方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57177156A (en) * 1981-04-24 1982-10-30 Canon Inc Photoconductive material
US4560634A (en) * 1981-05-29 1985-12-24 Tokyo Shibaura Denki Kabushiki Kaisha Electrophotographic photosensitive member using microcrystalline silicon
US4582773A (en) * 1985-05-02 1986-04-15 Energy Conversion Devices, Inc. Electrophotographic photoreceptor and method for the fabrication thereof

Also Published As

Publication number Publication date
US4704343A (en) 1987-11-03
DE3701488A1 (de) 1987-08-27

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee