DE3685449D1 - - Google Patents
Info
- Publication number
- DE3685449D1 DE3685449D1 DE86400551T DE3685449T DE3685449D1 DE 3685449 D1 DE3685449 D1 DE 3685449D1 DE 86400551 T DE86400551 T DE 86400551T DE 3685449 T DE3685449 T DE 3685449T DE 3685449 D1 DE3685449 D1 DE 3685449D1
- Authority
- DE
- Germany
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H10W20/063—
-
- H10W20/056—
-
- H10W20/092—
-
- H10W20/4441—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US71258985A | 1985-03-15 | 1985-03-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3685449D1 true DE3685449D1 (enExample) | 1992-07-02 |
Family
ID=24862764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE86400551T Expired - Fee Related DE3685449D1 (enExample) | 1985-03-15 | 1986-03-14 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0194950B1 (enExample) |
| JP (1) | JPS61263159A (enExample) |
| CA (1) | CA1265258A (enExample) |
| DE (1) | DE3685449D1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0680682B2 (ja) * | 1986-06-16 | 1994-10-12 | アメリカン テレフォン アンド テレグラフ カムパニー | デバイスの製造法 |
| US4968644A (en) * | 1986-06-16 | 1990-11-06 | At&T Bell Laboratories | Method for fabricating devices and devices formed thereby |
| JP2658019B2 (ja) * | 1986-07-03 | 1997-09-30 | ソニー株式会社 | 半導体装置の製造方法 |
| EP0296718A3 (en) * | 1987-06-26 | 1990-05-02 | Hewlett-Packard Company | A coplanar and self-aligned contact structure |
| EP0326956A3 (en) * | 1988-02-02 | 1991-03-13 | National Semiconductor Corporation | Method for connecting devices on an integrated circuit substrate to a metallization layer |
| US5264302A (en) * | 1988-02-26 | 1993-11-23 | Stork Screens B.V. | Electrode material for use in a storage battery |
| NL8800500A (nl) * | 1988-02-26 | 1989-09-18 | Stork Screens Bv | Electrodemateriaal voor toepassing in een suspensie accumulator-halfcel, accumulatorhalfcel met een electrode uit dergelijk materiaal en een dergelijke accumulatorhalfcel omvattende accumulator. |
| EP0343269B1 (en) * | 1988-05-26 | 1993-05-12 | Fairchild Semiconductor Corporation | High performance interconnect system for an integrated circuit |
| US4933743A (en) * | 1989-03-11 | 1990-06-12 | Fairchild Semiconductor Corporation | High performance interconnect system for an integrated circuit |
| US5117276A (en) * | 1989-08-14 | 1992-05-26 | Fairchild Camera And Instrument Corp. | High performance interconnect system for an integrated circuit |
| US5000818A (en) * | 1989-08-14 | 1991-03-19 | Fairchild Semiconductor Corporation | Method of fabricating a high performance interconnect system for an integrated circuit |
| US5086016A (en) * | 1990-10-31 | 1992-02-04 | International Business Machines Corporation | Method of making semiconductor device contact including transition metal-compound dopant source |
| US5250465A (en) * | 1991-01-28 | 1993-10-05 | Fujitsu Limited | Method of manufacturing semiconductor devices |
| JPH0794448A (ja) * | 1993-09-27 | 1995-04-07 | Nec Corp | 半導体装置の製造方法 |
| US5795820A (en) * | 1996-07-01 | 1998-08-18 | Advanced Micro Devices | Method for simplifying the manufacture of an interlayer dielectric stack |
| JP3094914B2 (ja) * | 1996-07-17 | 2000-10-03 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP2001511318A (ja) * | 1997-12-10 | 2001-08-07 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 半導体デバイス及びその製造方法 |
| CN108134208B (zh) * | 2017-12-18 | 2020-11-24 | 中国科学院长春光学精密机械与物理研究所 | 复合贴片型曲面频率选择表面阵列的制作方法 |
| CN108134209B (zh) * | 2017-12-18 | 2020-12-01 | 中国科学院长春光学精密机械与物理研究所 | 一种环形单元曲面频率选择表面阵列的制作方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5136497B2 (enExample) * | 1972-04-22 | 1976-10-08 | ||
| FR2238249A1 (en) * | 1973-07-16 | 1975-02-14 | Western Electric Co | Metallic nitride conductor layers on semiconductor - for improved compat-ability with substrate |
| CH648692A5 (en) * | 1979-09-05 | 1985-03-29 | Bbc Brown Boveri & Cie | Contact arrangement on a semiconductor component |
| WO1982003948A1 (en) * | 1981-05-04 | 1982-11-11 | Inc Motorola | Low resistivity composite metallization for semiconductor devices and method therefor |
| JPS58101454A (ja) * | 1981-12-12 | 1983-06-16 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置の電極 |
| JPS5916346A (ja) * | 1982-07-19 | 1984-01-27 | Matsushita Electronics Corp | 半導体装置の製造方法 |
| GB2164491B (en) * | 1984-09-14 | 1988-04-07 | Stc Plc | Semiconductor devices |
-
1986
- 1986-03-14 DE DE86400551T patent/DE3685449D1/de not_active Expired - Fee Related
- 1986-03-14 EP EP86400551A patent/EP0194950B1/en not_active Expired - Lifetime
- 1986-03-14 CA CA000504211A patent/CA1265258A/en not_active Expired - Fee Related
- 1986-03-15 JP JP61058001A patent/JPS61263159A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CA1265258A (en) | 1990-01-30 |
| EP0194950A2 (en) | 1986-09-17 |
| JPS61263159A (ja) | 1986-11-21 |
| EP0194950A3 (en) | 1988-08-10 |
| EP0194950B1 (en) | 1992-05-27 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |