DE3685449D1 - - Google Patents

Info

Publication number
DE3685449D1
DE3685449D1 DE86400551T DE3685449T DE3685449D1 DE 3685449 D1 DE3685449 D1 DE 3685449D1 DE 86400551 T DE86400551 T DE 86400551T DE 3685449 T DE3685449 T DE 3685449T DE 3685449 D1 DE3685449 D1 DE 3685449D1
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE86400551T
Other languages
German (de)
Inventor
Michael Cupertino California 95074 Us Thomas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Application granted granted Critical
Publication of DE3685449D1 publication Critical patent/DE3685449D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4437—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a transition metal
    • H10W20/4441—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a transition metal the principal metal being a refractory metal
DE86400551T 1985-03-15 1986-03-14 Expired - Fee Related DE3685449D1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US71258985A 1985-03-15 1985-03-15

Publications (1)

Publication Number Publication Date
DE3685449D1 true DE3685449D1 (enExample) 1992-07-02

Family

ID=24862764

Family Applications (1)

Application Number Title Priority Date Filing Date
DE86400551T Expired - Fee Related DE3685449D1 (enExample) 1985-03-15 1986-03-14

Country Status (4)

Country Link
EP (1) EP0194950B1 (enExample)
JP (1) JPS61263159A (enExample)
CA (1) CA1265258A (enExample)
DE (1) DE3685449D1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0680682B2 (ja) * 1986-06-16 1994-10-12 アメリカン テレフォン アンド テレグラフ カムパニー デバイスの製造法
US4968644A (en) * 1986-06-16 1990-11-06 At&T Bell Laboratories Method for fabricating devices and devices formed thereby
JP2658019B2 (ja) * 1986-07-03 1997-09-30 ソニー株式会社 半導体装置の製造方法
EP0296718A3 (en) * 1987-06-26 1990-05-02 Hewlett-Packard Company A coplanar and self-aligned contact structure
EP0326956A3 (en) * 1988-02-02 1991-03-13 National Semiconductor Corporation Method for connecting devices on an integrated circuit substrate to a metallization layer
NL8800500A (nl) * 1988-02-26 1989-09-18 Stork Screens Bv Electrodemateriaal voor toepassing in een suspensie accumulator-halfcel, accumulatorhalfcel met een electrode uit dergelijk materiaal en een dergelijke accumulatorhalfcel omvattende accumulator.
US5264302A (en) * 1988-02-26 1993-11-23 Stork Screens B.V. Electrode material for use in a storage battery
EP0343269B1 (en) * 1988-05-26 1993-05-12 Fairchild Semiconductor Corporation High performance interconnect system for an integrated circuit
US4933743A (en) * 1989-03-11 1990-06-12 Fairchild Semiconductor Corporation High performance interconnect system for an integrated circuit
US5000818A (en) * 1989-08-14 1991-03-19 Fairchild Semiconductor Corporation Method of fabricating a high performance interconnect system for an integrated circuit
US5117276A (en) * 1989-08-14 1992-05-26 Fairchild Camera And Instrument Corp. High performance interconnect system for an integrated circuit
US5086016A (en) * 1990-10-31 1992-02-04 International Business Machines Corporation Method of making semiconductor device contact including transition metal-compound dopant source
US5250465A (en) * 1991-01-28 1993-10-05 Fujitsu Limited Method of manufacturing semiconductor devices
JPH0794448A (ja) * 1993-09-27 1995-04-07 Nec Corp 半導体装置の製造方法
US5795820A (en) * 1996-07-01 1998-08-18 Advanced Micro Devices Method for simplifying the manufacture of an interlayer dielectric stack
JP3094914B2 (ja) * 1996-07-17 2000-10-03 日本電気株式会社 半導体装置の製造方法
EP0968529B1 (en) * 1997-12-10 2008-01-23 Nxp B.V. Semiconductor device and method of manufacturing such a device
CN108134209B (zh) * 2017-12-18 2020-12-01 中国科学院长春光学精密机械与物理研究所 一种环形单元曲面频率选择表面阵列的制作方法
CN108134208B (zh) * 2017-12-18 2020-11-24 中国科学院长春光学精密机械与物理研究所 复合贴片型曲面频率选择表面阵列的制作方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136497B2 (enExample) * 1972-04-22 1976-10-08
FR2238249A1 (en) 1973-07-16 1975-02-14 Western Electric Co Metallic nitride conductor layers on semiconductor - for improved compat-ability with substrate
CH648692A5 (en) * 1979-09-05 1985-03-29 Bbc Brown Boveri & Cie Contact arrangement on a semiconductor component
JPS58500680A (ja) * 1981-05-04 1983-04-28 モトロ−ラ・インコ−ポレ−テツド 低抵抗合成金属導体を具えた半導体デバイスおよびその製造方法
JPS58101454A (ja) * 1981-12-12 1983-06-16 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の電極
JPS5916346A (ja) * 1982-07-19 1984-01-27 Matsushita Electronics Corp 半導体装置の製造方法
GB2164491B (en) * 1984-09-14 1988-04-07 Stc Plc Semiconductor devices

Also Published As

Publication number Publication date
EP0194950A2 (en) 1986-09-17
JPS61263159A (ja) 1986-11-21
EP0194950B1 (en) 1992-05-27
EP0194950A3 (en) 1988-08-10
CA1265258A (en) 1990-01-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee