DE3677588D1 - Maskierungsverfahren und verwendete maske. - Google Patents
Maskierungsverfahren und verwendete maske.Info
- Publication number
- DE3677588D1 DE3677588D1 DE8686420280T DE3677588T DE3677588D1 DE 3677588 D1 DE3677588 D1 DE 3677588D1 DE 8686420280 T DE8686420280 T DE 8686420280T DE 3677588 T DE3677588 T DE 3677588T DE 3677588 D1 DE3677588 D1 DE 3677588D1
- Authority
- DE
- Germany
- Prior art keywords
- mask used
- masking method
- masking
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000000873 masking effect Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8517487A FR2590376A1 (fr) | 1985-11-21 | 1985-11-21 | Procede de masquage et masque utilise |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3677588D1 true DE3677588D1 (de) | 1991-03-28 |
Family
ID=9325177
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686420280T Expired - Lifetime DE3677588D1 (de) | 1985-11-21 | 1986-11-19 | Maskierungsverfahren und verwendete maske. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4762396A (de) |
EP (1) | EP0234166B1 (de) |
DE (1) | DE3677588D1 (de) |
FR (1) | FR2590376A1 (de) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0338110B1 (de) * | 1988-04-21 | 1993-03-17 | International Business Machines Corporation | Verfahren zur Herstellung eines Photoresistmusters und Apparat dafür |
US4912022A (en) * | 1988-12-27 | 1990-03-27 | Motorola, Inc. | Method for sloping the profile of an opening in resist |
JP2754785B2 (ja) * | 1989-09-20 | 1998-05-20 | ソニー株式会社 | 高密度光ディスクの製造方法 |
JPH0450943A (ja) * | 1990-06-15 | 1992-02-19 | Mitsubishi Electric Corp | マスクパターンとその製造方法 |
US5578402A (en) * | 1990-06-21 | 1996-11-26 | Matsushita Electronics Corporation | Photomask used by photolithography and a process of producing same |
TW198129B (de) * | 1990-06-21 | 1993-01-11 | Matsushita Electron Co Ltd | |
JPH0566552A (ja) * | 1990-12-28 | 1993-03-19 | Nippon Steel Corp | レチクル |
US5252434A (en) * | 1992-02-20 | 1993-10-12 | At&T Bell Laboratories | Method for forming a sloped surface having a predetermined slope |
US5320864A (en) * | 1992-06-29 | 1994-06-14 | Lsi Logic Corporation | Sedimentary deposition of photoresist on semiconductor wafers |
US5330883A (en) * | 1992-06-29 | 1994-07-19 | Lsi Logic Corporation | Techniques for uniformizing photoresist thickness and critical dimension of underlying features |
KR950008384B1 (ko) * | 1992-12-10 | 1995-07-28 | 삼성전자주식회사 | 패턴의 형성방법 |
GB2277998A (en) * | 1993-05-13 | 1994-11-16 | Marconi Gec Ltd | Mask and apparatus for producing microlenses |
US5866913A (en) * | 1995-12-19 | 1999-02-02 | International Business Machines Corporation | Proximity correction dose modulation for E-beam projection lithography |
KR100209752B1 (ko) * | 1996-05-16 | 1999-07-15 | 구본준 | 마이크로 렌즈 패턴용 마스크 |
US5840447A (en) * | 1997-08-29 | 1998-11-24 | International Business Machines Corporation | Multi-phase photo mask using sub-wavelength structures |
KR100288150B1 (ko) * | 1997-11-27 | 2001-05-02 | 구본준 | 액정표시장치의 제조방법 |
US7083900B2 (en) * | 1997-11-27 | 2006-08-01 | Lg Electronics Inc. | Method for manufacturing a liquid crystal display device |
US6301697B1 (en) * | 1999-04-30 | 2001-10-09 | Nicolas B. Cobb | Streamlined IC mask layout optical and process correction through correction reuse |
US6467076B1 (en) * | 1999-04-30 | 2002-10-15 | Nicolas Bailey Cobb | Method and apparatus for submicron IC design |
US6335128B1 (en) | 1999-09-28 | 2002-01-01 | Nicolas Bailey Cobb | Method and apparatus for determining phase shifts and trim masks for an integrated circuit |
US7412676B2 (en) * | 2000-06-13 | 2008-08-12 | Nicolas B Cobb | Integrated OPC verification tool |
US6425113B1 (en) * | 2000-06-13 | 2002-07-23 | Leigh C. Anderson | Integrated verification and manufacturability tool |
US6430737B1 (en) | 2000-07-10 | 2002-08-06 | Mentor Graphics Corp. | Convergence technique for model-based optical and process correction |
US6574784B1 (en) * | 2001-06-14 | 2003-06-03 | George P. Lippincott | Short edge management in rule based OPC |
US7293249B2 (en) * | 2002-01-31 | 2007-11-06 | Juan Andres Torres Robles | Contrast based resolution enhancement for photolithographic processing |
US7013439B2 (en) * | 2002-01-31 | 2006-03-14 | Juan Andres Torres Robles | Contrast based resolution enhancing technology |
US6973633B2 (en) * | 2002-07-24 | 2005-12-06 | George Lippincott | Caching of lithography and etch simulation results |
US6928634B2 (en) * | 2003-01-02 | 2005-08-09 | Yuri Granik | Matrix optical process correction |
US7073162B2 (en) * | 2003-10-31 | 2006-07-04 | Mentor Graphics Corporation | Site control for OPC |
US7539954B2 (en) * | 2004-02-24 | 2009-05-26 | Konstantinos Adam | OPC simulation model using SOCS decomposition of edge fragments |
US7536660B2 (en) * | 2004-02-24 | 2009-05-19 | Konstantinos Adam | OPC simulation model using SOCS decomposition of edge fragments |
US7234130B2 (en) * | 2004-02-25 | 2007-06-19 | James Word | Long range corrections in integrated circuit layout designs |
US7861207B2 (en) | 2004-02-25 | 2010-12-28 | Mentor Graphics Corporation | Fragmentation point and simulation site adjustment for resolution enhancement techniques |
US7282306B2 (en) * | 2004-03-26 | 2007-10-16 | Intel Corporation | Continuous sloped phase edge architecture fabrication technique using electron or optical beam blur for single phase shift mask ret |
US8799830B2 (en) * | 2004-05-07 | 2014-08-05 | Mentor Graphics Corporation | Integrated circuit layout design methodology with process variation bands |
US7240305B2 (en) * | 2004-06-02 | 2007-07-03 | Lippincott George P | OPC conflict identification and edge priority system |
US7459248B2 (en) * | 2005-02-24 | 2008-12-02 | James Word | Performing OPC on structures with virtual edges |
US8037429B2 (en) * | 2005-03-02 | 2011-10-11 | Mentor Graphics Corporation | Model-based SRAF insertion |
US7493587B2 (en) * | 2005-03-02 | 2009-02-17 | James Word | Chromeless phase shifting mask for integrated circuits using interior region |
US7434199B2 (en) * | 2005-09-27 | 2008-10-07 | Nicolas Bailey Cobb | Dense OPC |
US7712068B2 (en) * | 2006-02-17 | 2010-05-04 | Zhuoxiang Ren | Computation of electrical properties of an IC layout |
US7506285B2 (en) | 2006-02-17 | 2009-03-17 | Mohamed Al-Imam | Multi-dimensional analysis for predicting RET model accuracy |
US8056022B2 (en) | 2006-11-09 | 2011-11-08 | Mentor Graphics Corporation | Analysis optimizer |
US7966585B2 (en) | 2006-12-13 | 2011-06-21 | Mentor Graphics Corporation | Selective shielding for multiple exposure masks |
US7802226B2 (en) * | 2007-01-08 | 2010-09-21 | Mentor Graphics Corporation | Data preparation for multiple mask printing |
US7739650B2 (en) * | 2007-02-09 | 2010-06-15 | Juan Andres Torres Robles | Pre-bias optical proximity correction |
US7799487B2 (en) * | 2007-02-09 | 2010-09-21 | Ayman Yehia Hamouda | Dual metric OPC |
US8713483B2 (en) | 2007-06-05 | 2014-04-29 | Mentor Graphics Corporation | IC layout parsing for multiple masks |
US7805699B2 (en) * | 2007-10-11 | 2010-09-28 | Mentor Graphics Corporation | Shape-based photolithographic model calibration |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3232498A1 (de) * | 1982-09-01 | 1984-03-01 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Maske fuer die mustererzeugung in lackschichten mittels roentgenstrahllithographie und verfahren zu ihrer herstellung |
US4514489A (en) * | 1983-09-01 | 1985-04-30 | Motorola, Inc. | Photolithography process |
JPS60135949A (ja) * | 1983-12-23 | 1985-07-19 | Matsushita Electric Works Ltd | 光成形体の製造方法 |
-
1985
- 1985-11-21 FR FR8517487A patent/FR2590376A1/fr active Pending
-
1986
- 1986-11-19 EP EP86420280A patent/EP0234166B1/de not_active Expired - Lifetime
- 1986-11-19 DE DE8686420280T patent/DE3677588D1/de not_active Expired - Lifetime
- 1986-11-20 US US06/932,599 patent/US4762396A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4762396A (en) | 1988-08-09 |
FR2590376A1 (fr) | 1987-05-22 |
EP0234166A1 (de) | 1987-09-02 |
EP0234166B1 (de) | 1991-02-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |