DE3675504D1 - Vorrichtung zum abtasten eines ionenstrahles mit hohem strom mittels eines konstanten einschlagwinkels. - Google Patents

Vorrichtung zum abtasten eines ionenstrahles mit hohem strom mittels eines konstanten einschlagwinkels.

Info

Publication number
DE3675504D1
DE3675504D1 DE8686903780T DE3675504T DE3675504D1 DE 3675504 D1 DE3675504 D1 DE 3675504D1 DE 8686903780 T DE8686903780 T DE 8686903780T DE 3675504 T DE3675504 T DE 3675504T DE 3675504 D1 DE3675504 D1 DE 3675504D1
Authority
DE
Germany
Prior art keywords
scaning
ion beam
high current
current ion
impact angle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686903780T
Other languages
English (en)
Inventor
M Mobley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Application granted granted Critical
Publication of DE3675504D1 publication Critical patent/DE3675504D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE8686903780T 1985-05-28 1986-05-09 Vorrichtung zum abtasten eines ionenstrahles mit hohem strom mittels eines konstanten einschlagwinkels. Expired - Lifetime DE3675504D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/737,840 US4661712A (en) 1985-05-28 1985-05-28 Apparatus for scanning a high current ion beam with a constant angle of incidence
PCT/US1986/001007 WO1986007189A1 (en) 1985-05-28 1986-05-09 Apparatus for scanning a high current ion beam with a constant angle of incidence

Publications (1)

Publication Number Publication Date
DE3675504D1 true DE3675504D1 (de) 1990-12-13

Family

ID=24965524

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686903780T Expired - Lifetime DE3675504D1 (de) 1985-05-28 1986-05-09 Vorrichtung zum abtasten eines ionenstrahles mit hohem strom mittels eines konstanten einschlagwinkels.

Country Status (5)

Country Link
US (1) US4661712A (de)
EP (1) EP0223823B1 (de)
JP (1) JPH07101602B2 (de)
DE (1) DE3675504D1 (de)
WO (1) WO1986007189A1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4922106A (en) * 1986-04-09 1990-05-01 Varian Associates, Inc. Ion beam scanning method and apparatus
US4980562A (en) * 1986-04-09 1990-12-25 Varian Associates, Inc. Method and apparatus for high efficiency scanning in an ion implanter
US4745281A (en) * 1986-08-25 1988-05-17 Eclipse Ion Technology, Inc. Ion beam fast parallel scanning having dipole magnetic lens with nonuniform field
EP0287630A4 (de) * 1986-10-08 1989-07-25 Varian Associates Verfahren und vorrichtung zum abtasten mit konstantem einfallswinkel in ionenstrahlsystemen.
DE3734442A1 (de) * 1987-10-12 1989-04-27 Kernforschungsanlage Juelich Verfahren und vorrichtung zur bestrahlung grosser flaechen mit ionen
JPH0744143B2 (ja) * 1988-09-20 1995-05-15 株式会社日立製作所 電子線描画装置の外部磁気補正方法
SE463055B (sv) * 1989-02-10 1990-10-01 Scanditronix Ab Anordning foer att bestraala artiklar med elektroner samt magnetisk lins foer avboejning av straalar av laddade partiklar, saerskilt elektroner
US5132544A (en) * 1990-08-29 1992-07-21 Nissin Electric Company Ltd. System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning
US5311028A (en) * 1990-08-29 1994-05-10 Nissin Electric Co., Ltd. System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic and molecular ions
US5160846A (en) * 1990-10-03 1992-11-03 Eaton Corporation Method and apparatus for reducing tilt angle variations in an ion implanter
KR970002681B1 (ko) * 1990-10-03 1997-03-08 이턴 코오포레이숀 이온비임주입시스템과 그방법 및 이온비임을 편향시키는 정전렌즈
US5233331A (en) * 1991-01-17 1993-08-03 International Business Machines Corporation Inking buffer for flat-panel display controllers
US5091655A (en) * 1991-02-25 1992-02-25 Eaton Corporation Reduced path ion beam implanter
DE69330699T2 (de) * 1992-07-16 2002-07-04 Axcelis Tech Inc Ionenstrahl-Abrasterungsvorrichtung
US5350926A (en) * 1993-03-11 1994-09-27 Diamond Semiconductor Group, Inc. Compact high current broad beam ion implanter
US5834786A (en) * 1996-07-15 1998-11-10 Diamond Semiconductor Group, Inc. High current ribbon beam ion implanter
US6201251B1 (en) 1998-08-28 2001-03-13 Nikon Corporation Compensation of space charge in a particle beam system
US6316168B1 (en) * 1999-04-12 2001-11-13 Siemens Aktiengesellschaft Top layer imaging lithography for semiconductor processing
US6331227B1 (en) 1999-12-14 2001-12-18 Epion Corporation Enhanced etching/smoothing of dielectric surfaces
US6677599B2 (en) * 2000-03-27 2004-01-13 Applied Materials, Inc. System and method for uniformly implanting a wafer with an ion beam
AU2001270133A1 (en) 2000-06-22 2002-01-02 Proteros, Llc Ion implantation uniformity correction using beam current control
JP2005064033A (ja) * 2003-08-12 2005-03-10 Fujio Masuoka 半導体基板へのイオン注入方法
US6903350B1 (en) 2004-06-10 2005-06-07 Axcelis Technologies, Inc. Ion beam scanning systems and methods for improved ion implantation uniformity
US7232744B2 (en) * 2004-10-01 2007-06-19 Texas Instruments Incorporated Method for implanting dopants within a substrate by tilting the substrate relative to the implant source
US7045799B1 (en) * 2004-11-19 2006-05-16 Varian Semiconductor Equipment Associates, Inc. Weakening focusing effect of acceleration-deceleration column of ion implanter
KR20100047246A (ko) * 2007-07-03 2010-05-07 마이크로링크 디바이시즈, 인크. 박막 ⅲ-ⅴ족 화합물 솔라 셀 제조 방법
US7800083B2 (en) * 2007-11-06 2010-09-21 Axcelis Technologies, Inc. Plasma electron flood for ion beam implanter
JP6584678B2 (ja) * 2016-09-08 2019-10-02 三菱電機株式会社 走査電磁石、および走査電磁石を備えた粒子線照射装置の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3319110A (en) * 1966-05-12 1967-05-09 Gen Electric Electron focus projection and scanning system
US3585397A (en) * 1968-10-04 1971-06-15 Hughes Aircraft Co Programmed fine ion implantation beam system
FR2045238A5 (de) * 1969-06-26 1971-02-26 Commissariat Energie Atomique
US3723733A (en) * 1971-05-12 1973-03-27 Hughes Aircraft Co Stigmatic, crossed-field velocity filter
NL7415318A (nl) * 1974-11-25 1976-05-28 Philips Nv Wienfilter.
US4101813A (en) * 1977-04-14 1978-07-18 The United States Of America As Represented By The United States Department Of Energy Double deflection system for an electron beam device
US4117339A (en) * 1977-07-01 1978-09-26 Burroughs Corporation Double deflection electron beam generator for employment in the fabrication of semiconductor and other devices
US4287419A (en) * 1978-05-22 1981-09-01 The United States Of America As Represented By The United States Department Of Energy Strong focus space charge
US4367411A (en) * 1979-06-04 1983-01-04 Varian Associates, Inc. Unitary electromagnet for double deflection scanning of charged particle beam
US4283631A (en) * 1980-02-22 1981-08-11 Varian Associates, Inc. Bean scanning and method of use for ion implantation
US4449051A (en) * 1982-02-16 1984-05-15 Varian Associates, Inc. Dose compensation by differential pattern scanning

Also Published As

Publication number Publication date
JPH07101602B2 (ja) 1995-11-01
EP0223823B1 (de) 1990-11-07
EP0223823A1 (de) 1987-06-03
EP0223823A4 (de) 1987-09-15
US4661712A (en) 1987-04-28
WO1986007189A1 (en) 1986-12-04
JPS62502925A (ja) 1987-11-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.(N.