DE3670726D1 - Ladungstransportanordnung und verfahren zum herstellen einer derartigen anordnung. - Google Patents

Ladungstransportanordnung und verfahren zum herstellen einer derartigen anordnung.

Info

Publication number
DE3670726D1
DE3670726D1 DE8686402324T DE3670726T DE3670726D1 DE 3670726 D1 DE3670726 D1 DE 3670726D1 DE 8686402324 T DE8686402324 T DE 8686402324T DE 3670726 T DE3670726 T DE 3670726T DE 3670726 D1 DE3670726 D1 DE 3670726D1
Authority
DE
Germany
Prior art keywords
arrangement
producing
cargo transport
transport arrangement
cargo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686402324T
Other languages
English (en)
Inventor
Pierre Blanchard
Michel Carquet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE3670726D1 publication Critical patent/DE3670726D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66946—Charge transfer devices
    • H01L29/66954—Charge transfer devices with an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE8686402324T 1985-10-22 1986-10-16 Ladungstransportanordnung und verfahren zum herstellen einer derartigen anordnung. Expired - Lifetime DE3670726D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8515664A FR2589004B1 (fr) 1985-10-22 1985-10-22 Dispositif a transfert de charges et procede de realisation d'un tel dispositif

Publications (1)

Publication Number Publication Date
DE3670726D1 true DE3670726D1 (de) 1990-05-31

Family

ID=9324088

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686402324T Expired - Lifetime DE3670726D1 (de) 1985-10-22 1986-10-16 Ladungstransportanordnung und verfahren zum herstellen einer derartigen anordnung.

Country Status (5)

Country Link
US (1) US4963953A (de)
EP (1) EP0220989B1 (de)
JP (1) JPS62101073A (de)
DE (1) DE3670726D1 (de)
FR (1) FR2589004B1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2641416A1 (fr) * 1988-12-30 1990-07-06 Thomson Composants Militaires Procede de fabrication d'un dispositif a transfert de charges
US5369040A (en) * 1992-05-18 1994-11-29 Westinghouse Electric Corporation Method of making transparent polysilicon gate for imaging arrays
DE102004015419A1 (de) * 2004-03-26 2005-10-13 Putzmeister Ag Vorrichtung und Verfahren zur Steuerung einer Dickstoffpumpe

Also Published As

Publication number Publication date
FR2589004A1 (fr) 1987-04-24
US4963953A (en) 1990-10-16
EP0220989B1 (de) 1990-04-25
JPS62101073A (ja) 1987-05-11
FR2589004B1 (fr) 1987-11-20
EP0220989A1 (de) 1987-05-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition