DE3669900D1 - Reaktionskammer fuer epitaxiekristallzuechtung aus gasfoermiger phase von halbleitermaterialien. - Google Patents

Reaktionskammer fuer epitaxiekristallzuechtung aus gasfoermiger phase von halbleitermaterialien.

Info

Publication number
DE3669900D1
DE3669900D1 DE8686202229T DE3669900T DE3669900D1 DE 3669900 D1 DE3669900 D1 DE 3669900D1 DE 8686202229 T DE8686202229 T DE 8686202229T DE 3669900 T DE3669900 T DE 3669900T DE 3669900 D1 DE3669900 D1 DE 3669900D1
Authority
DE
Germany
Prior art keywords
epitaxic
reaction chamber
crystal growth
semiconductor materials
gaseous phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686202229T
Other languages
English (en)
Inventor
Peter Michael Ste Civ Frijlink
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3669900D1 publication Critical patent/DE3669900D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE8686202229T 1985-12-17 1986-12-10 Reaktionskammer fuer epitaxiekristallzuechtung aus gasfoermiger phase von halbleitermaterialien. Expired - Lifetime DE3669900D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8518677A FR2591616A1 (fr) 1985-12-17 1985-12-17 Chambre de reacteur pour croissance epitaxiale en phase vapeur des materiaux semiconducteurs.

Publications (1)

Publication Number Publication Date
DE3669900D1 true DE3669900D1 (de) 1990-05-03

Family

ID=9325873

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686202229T Expired - Lifetime DE3669900D1 (de) 1985-12-17 1986-12-10 Reaktionskammer fuer epitaxiekristallzuechtung aus gasfoermiger phase von halbleitermaterialien.

Country Status (6)

Country Link
US (1) US5108540A (de)
EP (1) EP0231544B1 (de)
JP (1) JP2505777B2 (de)
CA (1) CA1296241C (de)
DE (1) DE3669900D1 (de)
FR (1) FR2591616A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198034A (en) * 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
JP2733518B2 (ja) * 1989-04-29 1998-03-30 豊田合成株式会社 化合物半導体膜の気相成長装置
IN177541B (de) * 1990-06-29 1997-02-08 Geoffrey Norman Pain
JPH08250430A (ja) * 1995-03-10 1996-09-27 Shin Etsu Handotai Co Ltd 単結晶薄膜の製造方法
US5759263A (en) * 1996-12-05 1998-06-02 Abb Research Ltd. Device and a method for epitaxially growing objects by cvd
US6291800B1 (en) * 1998-02-20 2001-09-18 Tokyo Electron Limited Heat treatment apparatus and substrate processing system
FR2786203B1 (fr) * 1998-11-25 2001-10-19 Centre Nat Rech Scient Reacteur pour depot chimique en phase vapeur et procede pour sa mise en oeuvre
FR2786208B1 (fr) * 1998-11-25 2001-02-09 Centre Nat Rech Scient Procede de croissance cristalline sur substrat et reacteur pour sa mise en oeuvre
DE19855637A1 (de) * 1998-12-02 2000-06-15 Aixtron Ag Verfahren und System zur Halbleiterkristallherstellung mit Temperaturverwaltung
US6569250B2 (en) 2001-01-08 2003-05-27 Cree, Inc. Gas-driven rotation apparatus and method for forming silicon carbide layers
US6818894B2 (en) * 2001-04-30 2004-11-16 The Board Of Trustees Of The University Of Illinois Method and apparatus for characterization of ultrathin silicon oxide films using mirror-enhanced polarized reflectance fourier transform infrared spectroscopy
US6896738B2 (en) 2001-10-30 2005-05-24 Cree, Inc. Induction heating devices and methods for controllably heating an article
US6797069B2 (en) * 2002-04-08 2004-09-28 Cree, Inc. Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
US7118781B1 (en) * 2003-04-16 2006-10-10 Cree, Inc. Methods for controlling formation of deposits in a deposition system and deposition methods including the same
JP2006173482A (ja) * 2004-12-17 2006-06-29 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
US8052794B2 (en) * 2005-09-12 2011-11-08 The United States Of America As Represented By The Secretary Of The Navy Directed reagents to improve material uniformity
US8628622B2 (en) * 2005-09-12 2014-01-14 Cree, Inc. Gas driven rotation apparatus and method for forming crystalline layers
JP2013502079A (ja) 2009-08-12 2013-01-17 ジョージア ステート ユニバーシティ リサーチ ファウンデーション，インコーポレイテッド 高圧化学蒸着装置、方法、およびそれにより製造される組成物
CN115182040B (zh) * 2022-05-11 2024-05-07 华灿光电(苏州）有限公司 提高生长效率的金属有机气相化学沉积设备及使用方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1057035A (en) * 1963-08-26 1967-02-01 Standard Telephones Cables Ltd Manufacture of aluminium compounds
US3316121A (en) * 1963-10-02 1967-04-25 Northern Electric Co Epitaxial deposition process
FR1430174A (fr) * 1964-12-08 1966-03-04 Lignes Telegraph Telephon Perfectionnements aux procédés de dépôt de couches monocristallines
US3929556A (en) * 1974-02-19 1975-12-30 Cincinnati Electronics Corp Nucleating growth of lead-tin-telluride single crystal with an oriented barium fluoride substrate
US4518455A (en) * 1982-09-02 1985-05-21 At&T Technologies, Inc. CVD Process
JPS61129819A (ja) * 1984-11-28 1986-06-17 Mitsubishi Electric Corp 半導体製造装置

Also Published As

Publication number Publication date
JP2505777B2 (ja) 1996-06-12
CA1296241C (en) 1992-02-25
US5108540A (en) 1992-04-28
EP0231544B1 (de) 1990-03-28
EP0231544A1 (de) 1987-08-12
FR2591616A1 (fr) 1987-06-19
JPS62191493A (ja) 1987-08-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N