DE3576537D1 - Verfahren zum einfuehren eines exotischen atoms mittels elektronenstrahlen in einen feststoff. - Google Patents

Verfahren zum einfuehren eines exotischen atoms mittels elektronenstrahlen in einen feststoff.

Info

Publication number
DE3576537D1
DE3576537D1 DE8585306679T DE3576537T DE3576537D1 DE 3576537 D1 DE3576537 D1 DE 3576537D1 DE 8585306679 T DE8585306679 T DE 8585306679T DE 3576537 T DE3576537 T DE 3576537T DE 3576537 D1 DE3576537 D1 DE 3576537D1
Authority
DE
Germany
Prior art keywords
solid
electron beams
exotic atom
exotic
atom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585306679T
Other languages
English (en)
Inventor
Hiroshi Fujita
Naoto Sumida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osaka University NUC
Original Assignee
Osaka University NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osaka University NUC filed Critical Osaka University NUC
Application granted granted Critical
Publication of DE3576537D1 publication Critical patent/DE3576537D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C23C10/28—Solid state diffusion of only metal elements or silicon into metallic material surfaces using solids, e.g. powders, pastes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C12/00—Solid state diffusion of at least one non-metal element other than silicon and at least one metal element or silicon into metallic material surfaces
    • C23C12/02—Diffusion in one step
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/60—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using solids, e.g. powders, pastes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Laminated Bodies (AREA)
DE8585306679T 1985-02-27 1985-09-19 Verfahren zum einfuehren eines exotischen atoms mittels elektronenstrahlen in einen feststoff. Expired - Lifetime DE3576537D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60036614A JPH0674501B2 (ja) 1985-02-27 1985-02-27 電子線による異種原子の固体内注入方法

Publications (1)

Publication Number Publication Date
DE3576537D1 true DE3576537D1 (de) 1990-04-19

Family

ID=12474679

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585306679T Expired - Lifetime DE3576537D1 (de) 1985-02-27 1985-09-19 Verfahren zum einfuehren eines exotischen atoms mittels elektronenstrahlen in einen feststoff.

Country Status (4)

Country Link
US (1) US4670292A (de)
EP (1) EP0192874B1 (de)
JP (1) JPH0674501B2 (de)
DE (1) DE3576537D1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61204372A (ja) * 1985-03-06 1986-09-10 Univ Osaka 電子線による異種原子の固体内注入を利用した材料の非晶質化方法
GEP20002074B (en) * 1992-05-19 2000-05-10 Westaim Tech Inc Ca Modified Material and Method for its Production
US5681575A (en) 1992-05-19 1997-10-28 Westaim Technologies Inc. Anti-microbial coating for medical devices
US5454886A (en) * 1993-11-18 1995-10-03 Westaim Technologies Inc. Process of activating anti-microbial materials
US5897794A (en) * 1997-01-30 1999-04-27 The United States Of America As Represented By The Secretary Of The Navy Method and apparatus for ablative bonding using a pulsed electron

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2911533A (en) * 1957-12-24 1959-11-03 Arthur C Damask Electron irradiation of solids
DE1614854A1 (de) * 1966-12-30 1970-12-23 Texas Instruments Inc Verfahren zur Erzeugung von UEbergaengen in Halbleitern
US3718502A (en) * 1969-10-15 1973-02-27 J Gibbons Enhancement of diffusion of atoms into a heated substrate by bombardment
CA1095387A (en) * 1976-02-17 1981-02-10 Conrad M. Banas Skin melting
GB2031955B (en) * 1978-10-16 1982-09-08 Atomic Energy Authority Uk Inhibiting fretting corrosion of titanium
GB2073254B (en) * 1980-04-09 1984-05-23 Atomic Energy Authority Uk Ion implanting metal coated ferrous surfaces
US4359486A (en) * 1980-08-28 1982-11-16 Siemens Aktiengesellschaft Method of producing alloyed metal contact layers on crystal-orientated semiconductor surfaces by energy pulse irradiation
GB2125442B (en) * 1982-05-24 1986-02-19 Atomic Energy Authority Uk A procedure for the hardening of materials
DE3224810A1 (de) * 1982-07-02 1984-01-05 Siemens AG, 1000 Berlin und 8000 München Verfahren zur erzeugung harter, verschleissfester randschichten auf einem metallischen werkstoff
JPS6187833A (ja) * 1984-10-05 1986-05-06 Univ Osaka 高エネルギ−電子線による固体深部への異種原子の過飽和注入と濃度の制御方法
JPS61204372A (ja) * 1985-03-06 1986-09-10 Univ Osaka 電子線による異種原子の固体内注入を利用した材料の非晶質化方法
JP5014709B2 (ja) * 2006-08-28 2012-08-29 日揮触媒化成株式会社 低誘電率非晶質シリカ系被膜の形成方法および該方法より得られる低誘電率非晶質シリカ系被膜

Also Published As

Publication number Publication date
JPS61195972A (ja) 1986-08-30
JPH0674501B2 (ja) 1994-09-21
EP0192874B1 (de) 1990-03-14
EP0192874A1 (de) 1986-09-03
US4670292A (en) 1987-06-02

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