DE3572419D1 - Dielectrically isolated semiconductor devices - Google Patents

Dielectrically isolated semiconductor devices

Info

Publication number
DE3572419D1
DE3572419D1 DE8686900704T DE3572419T DE3572419D1 DE 3572419 D1 DE3572419 D1 DE 3572419D1 DE 8686900704 T DE8686900704 T DE 8686900704T DE 3572419 T DE3572419 T DE 3572419T DE 3572419 D1 DE3572419 D1 DE 3572419D1
Authority
DE
Germany
Prior art keywords
semiconductor devices
dielectrically isolated
isolated semiconductor
dielectrically
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8686900704T
Other languages
English (en)
Inventor
Adrian Hartman
James Kohl
Robert Scott
Harry Weston
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Application granted granted Critical
Publication of DE3572419D1 publication Critical patent/DE3572419D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
DE8686900704T 1985-01-15 1985-12-31 Dielectrically isolated semiconductor devices Expired DE3572419D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/691,749 US4982262A (en) 1985-01-15 1985-01-15 Inverted groove isolation technique for merging dielectrically isolated semiconductor devices
PCT/US1985/002591 WO1986004455A1 (en) 1985-01-15 1985-12-31 Dielectrically isolated semiconductor devices

Publications (1)

Publication Number Publication Date
DE3572419D1 true DE3572419D1 (en) 1989-09-21

Family

ID=24777808

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686900704T Expired DE3572419D1 (en) 1985-01-15 1985-12-31 Dielectrically isolated semiconductor devices

Country Status (6)

Country Link
US (1) US4982262A (de)
EP (1) EP0207982B1 (de)
JP (1) JPS62501598A (de)
CA (1) CA1244967A (de)
DE (1) DE3572419D1 (de)
WO (1) WO1986004455A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5268588A (en) * 1992-09-30 1993-12-07 Texas Instruments Incorporated Semiconductor structure for electrostatic discharge protection
JP2570148B2 (ja) * 1993-10-28 1997-01-08 日本電気株式会社 半導体装置
US5557125A (en) * 1993-12-08 1996-09-17 Lucent Technologies Inc. Dielectrically isolated semiconductor devices having improved characteristics
JP3612089B2 (ja) * 1994-03-22 2005-01-19 株式会社ルネサステクノロジ バンドギャップ基準電源装置
SE512661C2 (sv) * 1996-11-13 2000-04-17 Ericsson Telefon Ab L M Lateral bipolär hybridtransistor med fälteffektmod och förfarande vid densamma
US6236072B1 (en) * 1998-11-12 2001-05-22 Telefonaktiebolaget Lm Ericsson (Publ) Method and system for emitter partitioning for SiGe RF power transistors

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3829889A (en) * 1963-12-16 1974-08-13 Signetics Corp Semiconductor structure
US3598664A (en) * 1964-12-29 1971-08-10 Texas Instruments Inc High frequency transistor and process for fabricating same
US3579391A (en) * 1967-01-05 1971-05-18 Trw Inc Method of producing dielectric isolation for monolithic circuit
US3509433A (en) * 1967-05-01 1970-04-28 Fairchild Camera Instr Co Contacts for buried layer in a dielectrically isolated semiconductor pocket
US3488564A (en) * 1968-04-01 1970-01-06 Fairchild Camera Instr Co Planar epitaxial resistors
US3659675A (en) * 1969-06-30 1972-05-02 Transportation Specialists Inc Lubrication system and reservoir therefor
US3879745A (en) * 1969-11-11 1975-04-22 Philips Corp Semiconductor device
US3702947A (en) * 1970-10-21 1972-11-14 Itt Monolithic darlington transistors with common collector and seperate subcollectors
US3813588A (en) * 1973-07-09 1974-05-28 Motorola Inc Efficient power darlington device configuration
US3966577A (en) * 1973-08-27 1976-06-29 Trw Inc. Dielectrically isolated semiconductor devices
US3938176A (en) * 1973-09-24 1976-02-10 Texas Instruments Incorporated Process for fabricating dielectrically isolated semiconductor components of an integrated circuit
US4054898A (en) * 1973-09-28 1977-10-18 Robert Bosch Gmbh Switching system to short-circuit a load with minimum residual voltage
US3956033A (en) * 1974-01-03 1976-05-11 Motorola, Inc. Method of fabricating an integrated semiconductor transistor structure with epitaxial contact to the buried sub-collector
US3913124A (en) * 1974-01-03 1975-10-14 Motorola Inc Integrated semiconductor transistor structure with epitaxial contact to the buried sub-collector including fabrication method therefor
GB1587540A (en) * 1977-12-20 1981-04-08 Philips Electronic Associated Gate turn-off diodes and arrangements including such diodes
JPS5534619U (de) * 1978-08-25 1980-03-06
US4269636A (en) * 1978-12-29 1981-05-26 Harris Corporation Method of fabricating self-aligned bipolar transistor process and device utilizing etching and self-aligned masking
US4255207A (en) * 1979-04-09 1981-03-10 Harris Corporation Fabrication of isolated regions for use in self-aligning device process utilizing selective oxidation
US4280855A (en) * 1980-01-23 1981-07-28 Ibm Corporation Method of making a dual DMOS device by ion implantation and diffusion
US4274909A (en) * 1980-03-17 1981-06-23 International Business Machines Corporation Method for forming ultra fine deep dielectric isolation

Also Published As

Publication number Publication date
CA1244967A (en) 1988-11-15
JPS62501598A (ja) 1987-06-25
WO1986004455A1 (en) 1986-07-31
EP0207982A1 (de) 1987-01-14
EP0207982B1 (de) 1989-08-16
US4982262A (en) 1991-01-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN

8339 Ceased/non-payment of the annual fee