DE3481569D1 - Verfahren zum herstellen von diamantwaermesenken. - Google Patents

Verfahren zum herstellen von diamantwaermesenken.

Info

Publication number
DE3481569D1
DE3481569D1 DE8484307062T DE3481569T DE3481569D1 DE 3481569 D1 DE3481569 D1 DE 3481569D1 DE 8484307062 T DE8484307062 T DE 8484307062T DE 3481569 T DE3481569 T DE 3481569T DE 3481569 D1 DE3481569 D1 DE 3481569D1
Authority
DE
Germany
Prior art keywords
heat sinks
diamond heat
producing diamond
producing
sinks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8484307062T
Other languages
English (en)
Inventor
Ian Davies
Anthony Maurice Howard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Overseas Ltd
Original Assignee
Plessey Overseas Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Overseas Ltd filed Critical Plessey Overseas Ltd
Application granted granted Critical
Publication of DE3481569D1 publication Critical patent/DE3481569D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49799—Providing transitory integral holding or handling portion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4998—Combined manufacture including applying or shaping of fluent material
    • Y10T29/49982—Coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
DE8484307062T 1983-10-25 1984-10-16 Verfahren zum herstellen von diamantwaermesenken. Expired - Fee Related DE3481569D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB838328474A GB8328474D0 (en) 1983-10-25 1983-10-25 Diamond heatsink assemblies

Publications (1)

Publication Number Publication Date
DE3481569D1 true DE3481569D1 (de) 1990-04-12

Family

ID=10550695

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484307062T Expired - Fee Related DE3481569D1 (de) 1983-10-25 1984-10-16 Verfahren zum herstellen von diamantwaermesenken.

Country Status (4)

Country Link
US (1) US4595603A (de)
EP (1) EP0142282B1 (de)
DE (1) DE3481569D1 (de)
GB (2) GB8328474D0 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5642779A (en) * 1909-06-30 1997-07-01 Sumitomo Electric Industries, Ltd. Heat sink and a process for the production of the same
EP0194358B1 (de) * 1985-01-11 1991-10-23 Sumitomo Electric Industries, Ltd. Wärmesenke unter Verwendung eines gesinterten Körpers mit hoher Wärmeleitfähigkeit und Verfahren zu ihrer Herstellung
NL8700673A (nl) * 1987-03-23 1988-10-17 Drukker Int Bv Werkwijze voor het vervaardigen van een diamond heat sink.
US5130771A (en) * 1988-10-11 1992-07-14 Amoco Corporation Diamond composite heat sink for use with semiconductor devices
US5008737A (en) * 1988-10-11 1991-04-16 Amoco Corporation Diamond composite heat sink for use with semiconductor devices
US5031029A (en) * 1990-04-04 1991-07-09 International Business Machines Corporation Copper device and use thereof with semiconductor devices
JP3028660B2 (ja) * 1991-10-21 2000-04-04 住友電気工業株式会社 ダイヤモンドヒートシンクの製造方法
GB2256526B (en) * 1991-06-07 1994-12-14 De Beers Ind Diamond Heat sinks
DE59208893D1 (de) * 1992-01-23 1997-10-16 Siemens Ag Halbleitermodul mit hoher Isolations- und Wärmefähigkeit
US5455738A (en) * 1993-07-28 1995-10-03 E-Systems, Inc. High thermal conductivity, matched CTE. low density mounting plate for a semiconductor circuit
US9716147B2 (en) 2014-06-09 2017-07-25 Atomera Incorporated Semiconductor devices with enhanced deterministic doping and related methods
US9722046B2 (en) 2014-11-25 2017-08-01 Atomera Incorporated Semiconductor device including a superlattice and replacement metal gate structure and related methods

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3678995A (en) * 1970-06-22 1972-07-25 Rca Corp Support for electrical components and method of making the same
US3945902A (en) * 1974-07-22 1976-03-23 Rca Corporation Metallized device and method of fabrication
US4425195A (en) * 1982-11-10 1984-01-10 Martin Marietta Corporation Method of fabricating a diamond heat sink

Also Published As

Publication number Publication date
EP0142282A2 (de) 1985-05-22
EP0142282B1 (de) 1990-03-07
GB8328474D0 (en) 1983-11-23
GB2148157A (en) 1985-05-30
EP0142282A3 (en) 1986-03-26
US4595603A (en) 1986-06-17
GB8426434D0 (en) 1984-11-28
GB2148157B (en) 1987-02-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee