DE3480677D1 - Fokussierende magneten-zerstaeubungsvorrichtung. - Google Patents
Fokussierende magneten-zerstaeubungsvorrichtung.Info
- Publication number
- DE3480677D1 DE3480677D1 DE8484301651T DE3480677T DE3480677D1 DE 3480677 D1 DE3480677 D1 DE 3480677D1 DE 8484301651 T DE8484301651 T DE 8484301651T DE 3480677 T DE3480677 T DE 3480677T DE 3480677 D1 DE3480677 D1 DE 3480677D1
- Authority
- DE
- Germany
- Prior art keywords
- sprayer
- focusing magnetic
- focusing
- magnetic
- magnetic sprayer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/497,798 US4428816A (en) | 1983-05-25 | 1983-05-25 | Focusing magnetron sputtering apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3480677D1 true DE3480677D1 (de) | 1990-01-11 |
Family
ID=23978358
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484301651T Expired - Lifetime DE3480677D1 (de) | 1983-05-25 | 1984-03-12 | Fokussierende magneten-zerstaeubungsvorrichtung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4428816A (de) |
EP (1) | EP0127272B1 (de) |
JP (1) | JPS59229481A (de) |
CA (1) | CA1206119A (de) |
DE (1) | DE3480677D1 (de) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5976875A (ja) * | 1982-10-22 | 1984-05-02 | Hitachi Ltd | マグネトロン型スパッタ装置とそれに用いるターゲット |
JPS60152671A (ja) * | 1984-01-20 | 1985-08-10 | Anelva Corp | スパツタリング電極 |
US4606806A (en) * | 1984-05-17 | 1986-08-19 | Varian Associates, Inc. | Magnetron sputter device having planar and curved targets |
US4627904A (en) * | 1984-05-17 | 1986-12-09 | Varian Associates, Inc. | Magnetron sputter device having separate confining magnetic fields to separate targets and magnetically enhanced R.F. bias |
EP0163445B1 (de) * | 1984-05-17 | 1991-01-30 | Varian Associates, Inc. | Magnetron-Zerstäubungs-Vorrichtung mit ebenen und konkaven Auftreffplatten |
CH664303A5 (de) * | 1985-04-03 | 1988-02-29 | Balzers Hochvakuum | Haltevorrichtung fuer targets fuer kathodenzerstaeubung. |
CH669242A5 (de) * | 1985-07-10 | 1989-02-28 | Balzers Hochvakuum | Targetplatte fuer kathodenzerstaeubung. |
US4828668A (en) * | 1986-03-10 | 1989-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering system for deposition on parallel substrates |
US4855033A (en) * | 1986-04-04 | 1989-08-08 | Materials Research Corporation | Cathode and target design for a sputter coating apparatus |
CA1308060C (en) * | 1986-04-04 | 1992-09-29 | Tokyo Electron Limited | Cathode and target design for a sputter coating apparatus |
US4738761A (en) * | 1986-10-06 | 1988-04-19 | Microelectronics Center Of North Carolina | Shared current loop, multiple field apparatus and process for plasma processing |
IT1211938B (it) * | 1987-11-27 | 1989-11-08 | Siv Soc Italiana Vetro | Apparecchiatura e procedimento per la deposizione di uno strato sottile su un substrato trasparente, particolarmente per la realizzazione di vetrature |
US4842703A (en) * | 1988-02-23 | 1989-06-27 | Eaton Corporation | Magnetron cathode and method for sputter coating |
US4892633A (en) * | 1988-11-14 | 1990-01-09 | Vac-Tec Systems, Inc. | Magnetron sputtering cathode |
US4865708A (en) * | 1988-11-14 | 1989-09-12 | Vac-Tec Systems, Inc. | Magnetron sputtering cathode |
US4915805A (en) * | 1988-11-21 | 1990-04-10 | At&T Bell Laboratories | Hollow cathode type magnetron apparatus construction |
US5045166A (en) * | 1990-05-21 | 1991-09-03 | Mcnc | Magnetron method and apparatus for producing high density ionic gas discharge |
US5490914A (en) * | 1995-02-14 | 1996-02-13 | Sony Corporation | High utilization sputtering target for cathode assembly |
DE19648390A1 (de) * | 1995-09-27 | 1998-05-28 | Leybold Materials Gmbh | Target für die Sputterkathode einer Vakuumbeschichtungsanlage |
US5863399A (en) * | 1996-04-13 | 1999-01-26 | Singulus Technologies Gmbh | Device for cathode sputtering |
DE19614599A1 (de) * | 1996-04-13 | 1997-10-16 | Singulus Technologies Gmbh | Vorrichtung zur Kathodenzerstäubung |
DE19614595A1 (de) * | 1996-04-13 | 1997-10-16 | Singulus Technologies Gmbh | Vorrichtung zur Kathodenzerstäubung |
US6045670A (en) * | 1997-01-08 | 2000-04-04 | Applied Materials, Inc. | Back sputtering shield |
DE19806879A1 (de) * | 1998-02-19 | 1999-08-26 | Leybold Materials Gmbh | Target für die Sputterkathode einer Vakuumbeschichtungsanlage und Verfahren zu seiner Herstellung |
US6217716B1 (en) | 1998-05-06 | 2001-04-17 | Novellus Systems, Inc. | Apparatus and method for improving target erosion in hollow cathode magnetron sputter source |
JP3076311B2 (ja) * | 1998-10-06 | 2000-08-14 | 株式会社日鉱マテリアルズ | 酸化物焼結体スパッタリングターゲット組立体 |
US6444100B1 (en) | 2000-02-11 | 2002-09-03 | Seagate Technology Llc | Hollow cathode sputter source |
US20060102871A1 (en) * | 2003-04-08 | 2006-05-18 | Xingwu Wang | Novel composition |
US20080017501A1 (en) * | 2006-07-21 | 2008-01-24 | Makoto Inagawa | Cooled dark space shield for multi-cathode design |
US20080173541A1 (en) * | 2007-01-22 | 2008-07-24 | Eal Lee | Target designs and related methods for reduced eddy currents, increased resistance and resistivity, and enhanced cooling |
TWI338721B (en) * | 2009-10-16 | 2011-03-11 | Suntek Prec Corp | A sputtering apparatus with a side target and a method for sputtering a workpiece having non-planer surfaces |
CN108422151B (zh) * | 2017-06-15 | 2019-05-31 | 甘肃虹光电子有限责任公司 | 一种捷变频磁控管“热卡”的解决方法 |
US20240258087A1 (en) * | 2022-12-12 | 2024-08-01 | Intevac, Inc. | Cylindrical cathode and chamber using same for sputtering |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
HU179482B (en) * | 1979-02-19 | 1982-10-28 | Mikroelektronikai Valalat | Penning pulverizel source |
-
1983
- 1983-05-25 US US06/497,798 patent/US4428816A/en not_active Expired - Lifetime
- 1983-12-08 CA CA000442889A patent/CA1206119A/en not_active Expired
-
1984
- 1984-03-12 DE DE8484301651T patent/DE3480677D1/de not_active Expired - Lifetime
- 1984-03-12 EP EP84301651A patent/EP0127272B1/de not_active Expired
- 1984-04-04 JP JP59065988A patent/JPS59229481A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
EP0127272A2 (de) | 1984-12-05 |
EP0127272A3 (en) | 1987-01-07 |
US4428816A (en) | 1984-01-31 |
JPH0381256B2 (de) | 1991-12-27 |
EP0127272B1 (de) | 1989-12-06 |
CA1206119A (en) | 1986-06-17 |
JPS59229481A (ja) | 1984-12-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: TOKYO ELECTRON LTD., TOKIO/TOKYO, JP |
|
8328 | Change in the person/name/address of the agent |
Free format text: EISENFUEHR, SPEISER & PARTNER, 28195 BREMEN |