DE3474613D1 - Trench-defined semiconductor structure - Google Patents
Trench-defined semiconductor structureInfo
- Publication number
- DE3474613D1 DE3474613D1 DE8484114425T DE3474613T DE3474613D1 DE 3474613 D1 DE3474613 D1 DE 3474613D1 DE 8484114425 T DE8484114425 T DE 8484114425T DE 3474613 T DE3474613 T DE 3474613T DE 3474613 D1 DE3474613 D1 DE 3474613D1
- Authority
- DE
- Germany
- Prior art keywords
- trench
- semiconductor structure
- defined semiconductor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/60—Lateral BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
- H10D62/184—Base regions of bipolar transistors, e.g. BJTs or IGBTs of lateral BJTs
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/565,678 US4547793A (en) | 1983-12-27 | 1983-12-27 | Trench-defined semiconductor structure |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3474613D1 true DE3474613D1 (en) | 1988-11-17 |
Family
ID=24259659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484114425T Expired DE3474613D1 (en) | 1983-12-27 | 1984-11-30 | Trench-defined semiconductor structure |
Country Status (4)
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH083763B2 (ja) * | 1986-09-17 | 1996-01-17 | 三洋電機株式会社 | リップルフイルタ |
US4914740A (en) * | 1988-03-07 | 1990-04-03 | International Business Corporation | Charge amplifying trench memory cell |
US4970689A (en) * | 1988-03-07 | 1990-11-13 | International Business Machines Corporation | Charge amplifying trench memory cell |
US4929996A (en) * | 1988-06-29 | 1990-05-29 | Texas Instruments Incorporated | Trench bipolar transistor |
US5234861A (en) * | 1989-06-30 | 1993-08-10 | Honeywell Inc. | Method for forming variable width isolation structures |
US5017999A (en) * | 1989-06-30 | 1991-05-21 | Honeywell Inc. | Method for forming variable width isolation structures |
US5248894A (en) * | 1989-10-03 | 1993-09-28 | Harris Corporation | Self-aligned channel stop for trench-isolated island |
US5065217A (en) * | 1990-06-27 | 1991-11-12 | Texas Instruments Incorporated | Process for simultaneously fabricating isolation structures for bipolar and CMOS circuits |
US5952707A (en) * | 1997-12-05 | 1999-09-14 | Stmicroelectronics, Inc. | Shallow trench isolation with thin nitride as gate dielectric |
US6022788A (en) * | 1997-12-23 | 2000-02-08 | Stmicroelectronics, Inc. | Method of forming an integrated circuit having spacer after shallow trench fill and integrated circuit formed thereby |
US6255184B1 (en) | 1999-08-30 | 2001-07-03 | Episil Technologies, Inc. | Fabrication process for a three dimensional trench emitter bipolar transistor |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3385729A (en) * | 1964-10-26 | 1968-05-28 | North American Rockwell | Composite dual dielectric for isolation in integrated circuits and method of making |
JPS5228550B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1972-10-04 | 1977-07-27 | ||
US3919005A (en) * | 1973-05-07 | 1975-11-11 | Fairchild Camera Instr Co | Method for fabricating double-diffused, lateral transistor |
US4199775A (en) * | 1974-09-03 | 1980-04-22 | Bell Telephone Laboratories, Incorporated | Integrated circuit and method for fabrication thereof |
US4048649A (en) * | 1976-02-06 | 1977-09-13 | Transitron Electronic Corporation | Superintegrated v-groove isolated bipolar and vmos transistors |
DE2605641C3 (de) * | 1976-02-12 | 1979-12-20 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Hochfrequenztransistor und Verfahren zu seiner Herstellung |
US4137109A (en) * | 1976-04-12 | 1979-01-30 | Texas Instruments Incorporated | Selective diffusion and etching method for isolation of integrated logic circuit |
US4115797A (en) * | 1976-10-04 | 1978-09-19 | Fairchild Camera And Instrument Corporation | Integrated injection logic with heavily doped injector base self-aligned with injector emitter and collector |
FR2410366A1 (fr) * | 1977-11-29 | 1979-06-22 | Radiotechnique Compelec | Transistor de type mesa et procede de realisation de ce transistor |
US4174252A (en) * | 1978-07-26 | 1979-11-13 | Rca Corporation | Method of defining contact openings in insulating layers on semiconductor devices without the formation of undesirable pinholes |
US4283236A (en) * | 1979-09-19 | 1981-08-11 | Harris Corporation | Method of fabricating lateral PNP transistors utilizing selective diffusion and counter doping |
US4242156A (en) * | 1979-10-15 | 1980-12-30 | Rockwell International Corporation | Method of fabricating an SOS island edge passivation structure |
US4373965A (en) * | 1980-12-22 | 1983-02-15 | Ncr Corporation | Suppression of parasitic sidewall transistors in locos structures |
US4419150A (en) * | 1980-12-29 | 1983-12-06 | Rockwell International Corporation | Method of forming lateral bipolar transistors |
-
1983
- 1983-12-27 US US06/565,678 patent/US4547793A/en not_active Expired - Fee Related
-
1984
- 1984-08-20 JP JP59171660A patent/JPS60142564A/ja active Granted
- 1984-11-30 DE DE8484114425T patent/DE3474613D1/de not_active Expired
- 1984-11-30 EP EP84114425A patent/EP0150328B1/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0150328A1 (en) | 1985-08-07 |
EP0150328B1 (en) | 1988-10-12 |
JPH0347576B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-07-19 |
US4547793A (en) | 1985-10-15 |
JPS60142564A (ja) | 1985-07-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2134705B (en) | Semiconductor devices | |
DE3463873D1 (en) | Semiconductor devices | |
DE3476144D1 (en) | Semiconductor device | |
GB8411094D0 (en) | Semiconductor | |
JPS57211773A (en) | Semiconductor structure | |
DE3480248D1 (en) | Semiconductor devices | |
EP0138048A3 (en) | Press-packed semiconductor device | |
GB2140848B (en) | Arch-beam structure | |
GB2146427B (en) | Semiconductor manufacture | |
DE3469830D1 (en) | Semiconductor device | |
DE3465224D1 (en) | Semiconductor device | |
GB8410200D0 (en) | Making semiconductor devices | |
EP0148031A3 (en) | Semiconductor device | |
DE3465553D1 (en) | Semiconductor device | |
DE3474613D1 (en) | Trench-defined semiconductor structure | |
GB2143086B (en) | Semiconductor device manufacture | |
GB2139420B (en) | Semiconductor devices | |
GB8312281D0 (en) | Semiconductor devices | |
GB8310609D0 (en) | Forming semiconductor structure | |
GB8321579D0 (en) | Rooflight structure | |
EP0118102A3 (en) | Semiconductor device | |
GB8318321D0 (en) | Semiconductor structure | |
GB8405871D0 (en) | Semiconductor device | |
DE3469114D1 (en) | Semiconductor device | |
GB2151397B (en) | Semiconductor devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |