DE3473096D1 - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- DE3473096D1 DE3473096D1 DE8484300920T DE3473096T DE3473096D1 DE 3473096 D1 DE3473096 D1 DE 3473096D1 DE 8484300920 T DE8484300920 T DE 8484300920T DE 3473096 T DE3473096 T DE 3473096T DE 3473096 D1 DE3473096 D1 DE 3473096D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5692—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58022271A JPS59148360A (ja) | 1983-02-14 | 1983-02-14 | 半導体記憶装置及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3473096D1 true DE3473096D1 (en) | 1988-09-01 |
Family
ID=12078096
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484300920T Expired DE3473096D1 (en) | 1983-02-14 | 1984-02-14 | Semiconductor memory device |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0119729B1 (de) |
JP (1) | JPS59148360A (de) |
DE (1) | DE3473096D1 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6342099A (ja) * | 1986-08-06 | 1988-02-23 | Fujitsu Ltd | 3値レベルrom |
IT1240669B (it) * | 1990-02-27 | 1993-12-17 | Sgs Thomson Microelectronics | Procedimento di programmazione atto a definire almeno quattro differenti livelli di corrente in una cella di memoria rom |
JP3150747B2 (ja) * | 1992-02-24 | 2001-03-26 | 株式会社リコー | 半導体メモリ装置とその製造方法 |
TW299475B (de) * | 1993-03-30 | 1997-03-01 | Siemens Ag | |
JP3397427B2 (ja) * | 1994-02-02 | 2003-04-14 | 株式会社東芝 | 半導体記憶装置 |
JPH07226446A (ja) * | 1994-02-12 | 1995-08-22 | Toshiba Corp | 半導体装置及びその製造方法 |
KR20000066706A (ko) * | 1999-04-20 | 2000-11-15 | 최규용 | 디지털 데이터의 카오스 다치 취득방법 |
US8026544B2 (en) | 2009-03-30 | 2011-09-27 | Sandisk Technologies Inc. | Fabricating and operating a memory array having a multi-level cell region and a single-level cell region |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4294001A (en) * | 1979-01-08 | 1981-10-13 | Texas Instruments Incorporated | Method of making implant programmable metal gate MOS read only memory |
US4192014A (en) * | 1978-11-20 | 1980-03-04 | Ncr Corporation | ROM memory cell with 2n FET channel widths |
US4272830A (en) * | 1978-12-22 | 1981-06-09 | Motorola, Inc. | ROM Storage location having more than two states |
US4282646A (en) * | 1979-08-20 | 1981-08-11 | International Business Machines Corporation | Method of making a transistor array |
-
1983
- 1983-02-14 JP JP58022271A patent/JPS59148360A/ja active Granted
-
1984
- 1984-02-14 EP EP84300920A patent/EP0119729B1/de not_active Expired
- 1984-02-14 DE DE8484300920T patent/DE3473096D1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS6146065B2 (de) | 1986-10-11 |
EP0119729B1 (de) | 1988-07-27 |
EP0119729A1 (de) | 1984-09-26 |
JPS59148360A (ja) | 1984-08-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2135485B (en) | Semiconductor memory device | |
DE3471550D1 (en) | Semiconductor memory device | |
GB2137785B (en) | Semiconductor memory device | |
GB8405975D0 (en) | Semiconductor memory device | |
EP0143647A3 (en) | Semiconductor memory device | |
DE3380004D1 (en) | Semiconductor memory device | |
EP0096359A3 (en) | Semiconductor memory device | |
DE3370092D1 (en) | Semiconductor memory device | |
EP0095721A3 (en) | Semiconductor memory device | |
EP0130798A3 (en) | Semiconductor memory device | |
EP0145606A3 (en) | Semiconductor memory device | |
DE3377436D1 (en) | Semiconductor memory device | |
EP0145488A3 (en) | Semiconductor memory device | |
GB2147756B (en) | Semiconductor memory device | |
GB8408670D0 (en) | Semiconductor memory device | |
EP0147019A3 (en) | Semiconductor memory device | |
EP0122081A3 (en) | Semiconductor memory device | |
EP0130793A3 (en) | Semiconductor memory device | |
DE3379366D1 (en) | Semiconductor memory device | |
DE3374103D1 (en) | Semiconductor memory device | |
DE3376704D1 (en) | Semiconductor memory device | |
EP0098215A3 (en) | Semiconductor memory device | |
EP0098165A3 (en) | Semiconductor memory device | |
EP0144223A3 (en) | Semiconductor memory device | |
DE3473096D1 (en) | Semiconductor memory device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |