DE3466322D1 - Process for fabricating bipolar transistor - Google Patents

Process for fabricating bipolar transistor

Info

Publication number
DE3466322D1
DE3466322D1 DE8484304305T DE3466322T DE3466322D1 DE 3466322 D1 DE3466322 D1 DE 3466322D1 DE 8484304305 T DE8484304305 T DE 8484304305T DE 3466322 T DE3466322 T DE 3466322T DE 3466322 D1 DE3466322 D1 DE 3466322D1
Authority
DE
Germany
Prior art keywords
bipolar transistor
fabricating bipolar
fabricating
transistor
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484304305T
Other languages
English (en)
Inventor
Naoki Yokoyama
Toshio Ohshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3466322D1 publication Critical patent/DE3466322D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H01L29/66318—Heterojunction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
DE8484304305T 1983-06-30 1984-06-26 Process for fabricating bipolar transistor Expired DE3466322D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11909783A JPS6010776A (ja) 1983-06-30 1983-06-30 バイポーラトランジスタの製造方法

Publications (1)

Publication Number Publication Date
DE3466322D1 true DE3466322D1 (en) 1987-10-22

Family

ID=14752825

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484304305T Expired DE3466322D1 (en) 1983-06-30 1984-06-26 Process for fabricating bipolar transistor

Country Status (3)

Country Link
EP (1) EP0130774B1 (de)
JP (1) JPS6010776A (de)
DE (1) DE3466322D1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61188966A (ja) * 1985-02-16 1986-08-22 Fujitsu Ltd 高速半導体装置の製造方法
JPS61198776A (ja) * 1985-02-28 1986-09-03 Fujitsu Ltd ヘテロ接合バイポ−ラトランジスタおよびその製造方法
GB8507624D0 (en) * 1985-03-23 1985-05-01 Standard Telephones Cables Ltd Semiconductor devices
DE3688516T2 (de) * 1985-03-25 1993-10-07 Nippon Electric Co Herstellungsverfahren für einem bipolaren Transistor mit Heteroübergang.
GB2188479B (en) * 1986-03-26 1990-05-23 Stc Plc Semiconductor devices
US4872040A (en) * 1987-04-23 1989-10-03 International Business Machines Corporation Self-aligned heterojunction transistor
JP2971246B2 (ja) * 1992-04-15 1999-11-02 株式会社東芝 ヘテロバイポーラトランジスタの製造方法
US5436067A (en) 1993-11-22 1995-07-25 Kuraray Chemical Co., Ltd. Freshness keeping sheet

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53115181A (en) * 1977-03-18 1978-10-07 Hitachi Ltd Production of semiconductor device
FR2436502A1 (fr) * 1978-09-12 1980-04-11 Ankri David Transistors bipolaires a heterojonction de structure plane et leur procede de fabrication

Also Published As

Publication number Publication date
EP0130774A1 (de) 1985-01-09
JPH0326535B2 (de) 1991-04-11
JPS6010776A (ja) 1985-01-19
EP0130774B1 (de) 1987-09-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee