DE3462660D1 - Apparatus for the deposition of a polycrystalline silicon layer on a carbon ribbon - Google Patents

Apparatus for the deposition of a polycrystalline silicon layer on a carbon ribbon

Info

Publication number
DE3462660D1
DE3462660D1 DE8484110209T DE3462660T DE3462660D1 DE 3462660 D1 DE3462660 D1 DE 3462660D1 DE 8484110209 T DE8484110209 T DE 8484110209T DE 3462660 T DE3462660 T DE 3462660T DE 3462660 D1 DE3462660 D1 DE 3462660D1
Authority
DE
Germany
Prior art keywords
polycrystalline silicon
deposition
silicon layer
tape
carbon ribbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484110209T
Other languages
German (de)
English (en)
Inventor
Christian Belouet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe National Elf Aquitaine
Alcatel Lucent SAS
Original Assignee
Societe National Elf Aquitaine
Compagnie Generale dElectricite SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe National Elf Aquitaine, Compagnie Generale dElectricite SA filed Critical Societe National Elf Aquitaine
Application granted granted Critical
Publication of DE3462660D1 publication Critical patent/DE3462660D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C3/00—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material
    • B05C3/02—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material the work being immersed in the liquid or other fluent material
    • B05C3/12—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material the work being immersed in the liquid or other fluent material for treating work of indefinite length
    • B05C3/125—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material the work being immersed in the liquid or other fluent material for treating work of indefinite length the work being a web, band, strip or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
    • C23C2/14—Removing excess of molten coatings; Controlling or regulating the coating thickness
    • C23C2/22—Removing excess of molten coatings; Controlling or regulating the coating thickness by rubbing, e.g. using knives, e.g. rubbing solids
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
    • C23C2/34—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor characterised by the shape of the material to be treated
    • C23C2/36—Elongated material
    • C23C2/40—Plates; Strips
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Coating Apparatus (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Polarising Elements (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE8484110209T 1983-08-30 1984-08-28 Apparatus for the deposition of a polycrystalline silicon layer on a carbon ribbon Expired DE3462660D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8313915A FR2550965B1 (fr) 1983-08-30 1983-08-30 Dispositif pour deposer une couche de silicium polycristallin sur un ruban de carbone

Publications (1)

Publication Number Publication Date
DE3462660D1 true DE3462660D1 (en) 1987-04-23

Family

ID=9291888

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484110209T Expired DE3462660D1 (en) 1983-08-30 1984-08-28 Apparatus for the deposition of a polycrystalline silicon layer on a carbon ribbon

Country Status (8)

Country Link
US (1) US4520752A (enExample)
EP (1) EP0141941B1 (enExample)
JP (1) JPS60232272A (enExample)
AT (1) ATE25931T1 (enExample)
AU (1) AU561637B2 (enExample)
CA (1) CA1224027A (enExample)
DE (1) DE3462660D1 (enExample)
FR (1) FR2550965B1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2561139B1 (fr) * 1984-03-16 1986-09-12 Comp Generale Electricite Dispositif pour deposer une couche de silicium sur un ruban de carbone
FR2579372B1 (fr) * 1985-03-25 1987-05-07 Comp Generale Electricite Procede et dispositif pour tirer un ruban constitue par un support revetu d'une couche d'un materiau semi-conducteur a partir d'un bain liquide de ce materiau
US4861416A (en) * 1985-04-04 1989-08-29 The United States Of America As Represented By The Administrator, National Aeronautics And Space Administration Ribbon growing method and apparatus
EP1198626A2 (en) * 1999-07-02 2002-04-24 Evergreen Solar Inc. Edge meniscus control of crystalline ribbon growth
EP1556529B1 (en) * 2002-10-18 2007-09-12 Evergreen Solar Inc. Method and apparatus for crystal growth
US6814802B2 (en) * 2002-10-30 2004-11-09 Evergreen Solar, Inc. Method and apparatus for growing multiple crystalline ribbons from a single crucible
FR2864554B1 (fr) * 2003-12-24 2006-03-10 Solarforce Dispositif pour deposer une couche de silicium polycristallin sur un support
FR2884834B1 (fr) * 2005-04-22 2007-06-08 Solarforce Soc Par Actions Sim Procede de tirage de rubans de semi-conducteur de faible epaisseur
FR2887262B1 (fr) * 2005-06-17 2007-07-27 Solarforce Soc Par Actions Sim Ruban de carbone destine a etre recouvert d'une couche mince d'un materiau semi-conducteur et procede de depot d'une telle couche
US8092594B2 (en) * 2005-06-17 2012-01-10 Solarforce Carbon ribbon to be covered with a thin layer made of semiconductor material and method for depositing a layer of this type
CN101821433A (zh) * 2007-08-31 2010-09-01 长青太阳能股份有限公司 用于提高晶片产率的带状晶体线
FR2959873B1 (fr) * 2010-05-04 2012-04-27 Solarforce Ruban de carbone destine a recevoir une couche d'un materiau semi-conducteur
JP6593093B2 (ja) * 2015-10-22 2019-10-23 東レ株式会社 塗布装置、塗工装置および塗膜付ウェブの製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1503128A (en) * 1922-04-17 1924-07-29 L S & N Corp Process and apparatus for coating corset steels
US2577904A (en) * 1948-02-03 1951-12-11 Armco Steel Corp Method for hot dip coating of metal strip
DE1286510B (de) * 1962-11-23 1969-01-09 Siemens Ag Verfahren zur Herstellung von bandfoermigen, aus Halbleitermaterial bestehenden Einkristallen durch Ziehen aus einer Schmelze
US3429734A (en) * 1965-10-24 1969-02-25 Texas Instruments Inc Method and apparatus for coating metal strip
GB1487587A (en) * 1974-12-04 1977-10-05 Metals Res Ltd Crystal growth
US4299648A (en) * 1980-08-20 1981-11-10 The United States Of America As Represented By The United States Department Of Energy Method and apparatus for drawing monocrystalline ribbon from a melt

Also Published As

Publication number Publication date
AU561637B2 (en) 1987-05-14
EP0141941B1 (fr) 1987-03-18
EP0141941A1 (fr) 1985-05-22
JPS6238031B2 (enExample) 1987-08-15
CA1224027A (fr) 1987-07-14
FR2550965A1 (fr) 1985-03-01
AU3250384A (en) 1985-03-07
FR2550965B1 (fr) 1985-10-11
JPS60232272A (ja) 1985-11-18
ATE25931T1 (de) 1987-04-15
US4520752A (en) 1985-06-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee