DE3415576A1 - Halbleiterduennschichtlinse - Google Patents

Halbleiterduennschichtlinse

Info

Publication number
DE3415576A1
DE3415576A1 DE19843415576 DE3415576A DE3415576A1 DE 3415576 A1 DE3415576 A1 DE 3415576A1 DE 19843415576 DE19843415576 DE 19843415576 DE 3415576 A DE3415576 A DE 3415576A DE 3415576 A1 DE3415576 A1 DE 3415576A1
Authority
DE
Germany
Prior art keywords
semiconductor
thin film
film lens
semiconductor thin
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19843415576
Other languages
German (de)
English (en)
Other versions
DE3415576C2 (enExample
Inventor
Hidetoshi Matsudo Chiba Nojiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7583283A external-priority patent/JPS59201003A/ja
Priority claimed from JP59073817A external-priority patent/JPS60216301A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3415576A1 publication Critical patent/DE3415576A1/de
Application granted granted Critical
Publication of DE3415576C2 publication Critical patent/DE3415576C2/de
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/262—Optical details of coupling light into, or out of, or between fibre ends, e.g. special fibre end shapes or associated optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0087—Simple or compound lenses with index gradient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0267—Integrated focusing lens

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE19843415576 1983-04-28 1984-04-26 Halbleiterduennschichtlinse Granted DE3415576A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7583283A JPS59201003A (ja) 1983-04-28 1983-04-28 半導体薄膜レンズ
JP59073817A JPS60216301A (ja) 1984-04-11 1984-04-11 半導体薄膜レンズ

Publications (2)

Publication Number Publication Date
DE3415576A1 true DE3415576A1 (de) 1984-10-31
DE3415576C2 DE3415576C2 (enExample) 1992-05-07

Family

ID=26414968

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19843415576 Granted DE3415576A1 (de) 1983-04-28 1984-04-26 Halbleiterduennschichtlinse

Country Status (2)

Country Link
US (1) US4640585A (enExample)
DE (1) DE3415576A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0783711A4 (en) * 1995-03-08 1998-10-14 Lightpath Tech Inc GRADIENT INDEX LENSES AND MANUFACTURING METHOD
US6633705B2 (en) 2000-08-11 2003-10-14 Alcatel Modal field converter for a highly efficient coupling in optical modules

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3503203A1 (de) * 1985-01-31 1986-08-07 Standard Elektrik Lorenz Ag, 7000 Stuttgart Optischer multiplexer/demultiplexer
JPS61107207A (ja) * 1984-10-30 1986-05-26 Nippon Sheet Glass Co Ltd 光結合器
US4953947A (en) * 1986-08-08 1990-09-04 Corning Incorporated Dispersion transformer having multichannel fiber
US4752109A (en) * 1986-09-02 1988-06-21 Amp Incorporated Optoelectronics package for a semiconductor laser
US4762386A (en) * 1986-09-02 1988-08-09 Amp Incorporated Optical fiber assembly including means utilizing a column load to compensate for thermal effects
US4818053A (en) * 1986-09-02 1989-04-04 Amp Incorporated Optical bench for a semiconductor laser and method
US4762395A (en) * 1986-09-02 1988-08-09 Amp Incorporated Lens assembly for optical coupling with a semiconductor laser
JPH01292875A (ja) * 1988-05-20 1989-11-27 Oki Electric Ind Co Ltd 半導体光増幅モジュール
US5080739A (en) * 1990-06-07 1992-01-14 The United States Of America As Represented By The Secretary Of The Air Force Method for making a beam splitter and partially transmitting normal-incidence mirrors for soft x-rays
US5689374A (en) * 1995-03-08 1997-11-18 Lightpath Technologies, Inc. GRIN lens and method of manufacturing
JP2002169052A (ja) * 2000-11-30 2002-06-14 Japan Aviation Electronics Industry Ltd 異方導光性部材を有する光学装置
US20020089758A1 (en) * 2001-01-05 2002-07-11 Nikon Corporation Optical component thickness adjustment method, optical component, and position adjustment method for optical component
US6888984B2 (en) 2002-02-28 2005-05-03 Sarnoff Corporation Amorphous silicon alloy based integrated spot-size converter
US7426328B2 (en) * 2002-08-28 2008-09-16 Phosistor Technologies, Inc. Varying refractive index optical medium using at least two materials with thicknesses less than a wavelength
US7303339B2 (en) * 2002-08-28 2007-12-04 Phosistor Technologies, Inc. Optical beam transformer module for light coupling between a fiber array and a photonic chip and the method of making the same
US8538208B2 (en) * 2002-08-28 2013-09-17 Seng-Tiong Ho Apparatus for coupling light between input and output waveguides
US7002754B2 (en) * 2003-11-14 2006-02-21 Case Western Reserve University Multilayer polymer gradient index (GRIN) lenses
MD2646G2 (ro) * 2004-04-28 2005-08-31 Ион ТИГИНЯНУ Procedeu de obţinere a lentilelor în baza semiconductoarelor cu gradient al indicelui de refracţie
US20130057959A1 (en) * 2011-09-01 2013-03-07 Theodore D. Fay Highly dispersive optical element with binary transmissibility
CN113285000B (zh) * 2021-05-14 2022-08-26 衢州职业技术学院 薄膜、安装结构、led芯片结构、led灯和光束角度调节方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4025157A (en) * 1975-06-26 1977-05-24 The United States Of America As Represented By The Secretary Of The Navy Gradient index miniature coupling lens
US4152044A (en) * 1977-06-17 1979-05-01 International Telephone And Telegraph Corporation Galium aluminum arsenide graded index waveguide
US4176208A (en) * 1978-11-24 1979-11-27 Honeywell Inc. Production of inhomogeneous films by sequential layers of homogeneous films
DE3329510A1 (de) * 1983-08-16 1985-02-28 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zur herstellung eines lichtbeugenden bauelementes

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL81638C (enExample) * 1948-10-01
US3427627A (en) * 1966-06-13 1969-02-11 Armstrong Cork Co Stacked dielectric disc lens having differing radial dielectric gradations
JPS5041559A (enExample) * 1973-08-02 1975-04-16
JPS5269643A (en) * 1975-12-08 1977-06-09 Toshiba Corp Optical lens

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4025157A (en) * 1975-06-26 1977-05-24 The United States Of America As Represented By The Secretary Of The Navy Gradient index miniature coupling lens
US4152044A (en) * 1977-06-17 1979-05-01 International Telephone And Telegraph Corporation Galium aluminum arsenide graded index waveguide
US4176208A (en) * 1978-11-24 1979-11-27 Honeywell Inc. Production of inhomogeneous films by sequential layers of homogeneous films
DE3329510A1 (de) * 1983-08-16 1985-02-28 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zur herstellung eines lichtbeugenden bauelementes

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
US-B.: J.I. Pankove, "Optical Processes in Semiconductors", Dover Publ., Inc., New York, 1975, S. 88,89 u. 99 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0783711A4 (en) * 1995-03-08 1998-10-14 Lightpath Tech Inc GRADIENT INDEX LENSES AND MANUFACTURING METHOD
US6633705B2 (en) 2000-08-11 2003-10-14 Alcatel Modal field converter for a highly efficient coupling in optical modules

Also Published As

Publication number Publication date
DE3415576C2 (enExample) 1992-05-07
US4640585A (en) 1987-02-03

Similar Documents

Publication Publication Date Title
DE3415576A1 (de) Halbleiterduennschichtlinse
EP0829121B1 (de) Dfb-laserdiodenstruktur mit komplexer optischer gitterkopplung
DE69414208T2 (de) Optischer Halbleitervorrichtung und Herstellungsverfahren
EP0187198B1 (de) Verfahren zur Herstellung einer integriert - optischen Anordnung
DE4135813C2 (de) Oberflächenemittierende Halbleiter-Laservorrichtung
DE69119124T2 (de) Quaternäres II-VI-Halbleitermaterial für photonische Bauelemente
DE69611392T2 (de) Laser mit einem sättigbaren Bragg-Reflektor
DE60210546T2 (de) Optische Halbleitervorrichtung und Herstellungsverfahren
DE69126781T2 (de) Fabry-perot-modulator
DE69118482T2 (de) Laserdiode mit einer Schutzschicht auf ihrer lichtemittierenden Endfläche
DE3306085A1 (de) Halbleiterlaser
DE3300131A1 (de) Dielektrischer optischer wellenleiter und verfahren zu seiner herstellung
DE112017003307T5 (de) Verfahren zur Herstellung einer optischen Halbleitervorrichtung und optische Halbleitervorrichtung
EP2885667B1 (de) Planaroptisches element, sensorelement und verfahren zu dessen herstellung
DE3783420T2 (de) Gerichtete kopplung zwischen schichten in antiresonant reflektierenden optischen wellenleitern.
DE69030831T2 (de) Photodetektor mit wellenlängenselektivem optischem Koppler
DE19939471B4 (de) Halbleiterleuchtdiode mit Stromdiffusionsschicht
DE112021002102T5 (de) Quantenkaskadenlaserelement, Quantenkaskadenlaservorrichtung und Verfahren zur Fertigung der Quantenkaskadenlaservorrichtung
DE4404459A1 (de) Optischer Schalter und Verfahren zum Herstellen des optischen Schalters
DE69521556T2 (de) Herstellungsverfahren für eine optische Halbleitervorrichtung
DE69428556T2 (de) Lichtemittierende II-VI-Halbleitervorrichtung und deren Herstellungsmethode
DE102004029423A1 (de) Halbleiterlaserelement
DE69418798T2 (de) Aktives optisches Halbleiter-Stegwellenleiterelement
DE3221497A1 (de) Stabilisierter halbleiterlaser
DE3144628C2 (enExample)

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee