DE3382340D1 - Raumladungsmodulierende halbleiteranordnung und ein solche anordnung enthaltender schaltkreis. - Google Patents

Raumladungsmodulierende halbleiteranordnung und ein solche anordnung enthaltender schaltkreis.

Info

Publication number
DE3382340D1
DE3382340D1 DE8383107607T DE3382340T DE3382340D1 DE 3382340 D1 DE3382340 D1 DE 3382340D1 DE 8383107607 T DE8383107607 T DE 8383107607T DE 3382340 T DE3382340 T DE 3382340T DE 3382340 D1 DE3382340 D1 DE 3382340D1
Authority
DE
Germany
Prior art keywords
arrangement
circuit containing
space charging
charging semiconductor
semiconductor arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8383107607T
Other languages
German (de)
English (en)
Inventor
John Lawrence Freeouf
Thomas Nelson Jackson
Steven Eric Laux
Jerry Mac Pherson Woodall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3382340D1 publication Critical patent/DE3382340D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/871—Vertical FETs having Schottky gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
DE8383107607T 1982-09-17 1983-08-02 Raumladungsmodulierende halbleiteranordnung und ein solche anordnung enthaltender schaltkreis. Expired - Lifetime DE3382340D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/419,381 US4638342A (en) 1982-09-17 1982-09-17 Space charge modulation device

Publications (1)

Publication Number Publication Date
DE3382340D1 true DE3382340D1 (de) 1991-08-22

Family

ID=23662022

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383107607T Expired - Lifetime DE3382340D1 (de) 1982-09-17 1983-08-02 Raumladungsmodulierende halbleiteranordnung und ein solche anordnung enthaltender schaltkreis.

Country Status (4)

Country Link
US (1) US4638342A (OSRAM)
EP (1) EP0106044B1 (OSRAM)
JP (1) JPS5961190A (OSRAM)
DE (1) DE3382340D1 (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0687483B2 (ja) * 1988-02-13 1994-11-02 株式会社東芝 半導体装置
US5019530A (en) * 1990-04-20 1991-05-28 International Business Machines Corporation Method of making metal-insulator-metal junction structures with adjustable barrier heights
US5612547A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corporation Silicon carbide static induction transistor
US9520445B2 (en) * 2011-07-12 2016-12-13 Helmholtz-Zentrum Dresden-Rossendorf E. V. Integrated non-volatile memory elements, design and use

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3684902A (en) * 1966-06-07 1972-08-15 Westinghouse Electric Corp Semiconductor switch device
US3549961A (en) * 1968-06-19 1970-12-22 Int Rectifier Corp Triac structure and method of manufacture
USRE29971E (en) * 1971-07-31 1979-04-17 Zaidan Hojin Hondotai Kenkyn Shinkokai Field effect semiconductor device having an unsaturated triode vacuum tube characteristic
JPS5039880A (OSRAM) * 1973-08-13 1975-04-12
US4066483A (en) * 1976-07-07 1978-01-03 Western Electric Company, Inc. Gate-controlled bidirectional switching device
JPS5357769A (en) * 1976-11-04 1978-05-25 Mitsubishi Electric Corp Electrostatic induction transistor
US4132996A (en) * 1976-11-08 1979-01-02 General Electric Company Electric field-controlled semiconductor device
US4141021A (en) * 1977-02-14 1979-02-20 Varian Associates, Inc. Field effect transistor having source and gate electrodes on opposite faces of active layer
US4236166A (en) * 1979-07-05 1980-11-25 Bell Telephone Laboratories, Incorporated Vertical field effect transistor
JPS5636154A (en) * 1979-09-03 1981-04-09 Seiko Instr & Electronics Ltd Mes type integrated circuit
DE3040873C2 (de) * 1980-10-30 1984-02-23 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Feldeffekttransistor
JPS56138957A (en) * 1981-03-07 1981-10-29 Semiconductor Res Found Electrostatic induction type semiconductor device

Also Published As

Publication number Publication date
JPS5961190A (ja) 1984-04-07
JPH0213928B2 (OSRAM) 1990-04-05
EP0106044B1 (en) 1991-07-17
EP0106044A2 (en) 1984-04-25
US4638342A (en) 1987-01-20
EP0106044A3 (en) 1987-03-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee