DE3381268D1 - Polysiliciumwiderstand mit niedriger thermischer aktivierungsenergie. - Google Patents

Polysiliciumwiderstand mit niedriger thermischer aktivierungsenergie.

Info

Publication number
DE3381268D1
DE3381268D1 DE8383307323T DE3381268T DE3381268D1 DE 3381268 D1 DE3381268 D1 DE 3381268D1 DE 8383307323 T DE8383307323 T DE 8383307323T DE 3381268 T DE3381268 T DE 3381268T DE 3381268 D1 DE3381268 D1 DE 3381268D1
Authority
DE
Germany
Prior art keywords
polysilicial
resistance
low thermal
activation energy
thermal activation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8383307323T
Other languages
English (en)
Inventor
Ronald R Bourassa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thorn EMI North America Inc
Original Assignee
Thorn EMI North America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thorn EMI North America Inc filed Critical Thorn EMI North America Inc
Application granted granted Critical
Publication of DE3381268D1 publication Critical patent/DE3381268D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3215—Doping the layers
    • H01L21/32155—Doping polycristalline - or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
DE8383307323T 1982-12-15 1983-12-01 Polysiliciumwiderstand mit niedriger thermischer aktivierungsenergie. Expired - Lifetime DE3381268D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/449,984 US4658378A (en) 1982-12-15 1982-12-15 Polysilicon resistor with low thermal activation energy

Publications (1)

Publication Number Publication Date
DE3381268D1 true DE3381268D1 (de) 1990-04-05

Family

ID=23786279

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383307323T Expired - Lifetime DE3381268D1 (de) 1982-12-15 1983-12-01 Polysiliciumwiderstand mit niedriger thermischer aktivierungsenergie.

Country Status (4)

Country Link
US (1) US4658378A (de)
EP (1) EP0112097B1 (de)
JP (1) JPS59167048A (de)
DE (1) DE3381268D1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60109260A (ja) * 1983-11-15 1985-06-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 補償された多結晶シリコン抵抗素子
US4560419A (en) * 1984-05-30 1985-12-24 Inmos Corporation Method of making polysilicon resistors with a low thermal activation energy
US4592128A (en) * 1984-06-04 1986-06-03 Inmos Corporation Method for fabricating integrated circuits with polysilicon resistors
GB8710359D0 (en) * 1987-05-01 1987-06-03 Inmos Ltd Semiconductor element
KR900005038B1 (ko) * 1987-07-31 1990-07-18 삼성전자 주식회사 고저항 다결정 실리콘의 제조방법
US4811063A (en) * 1987-10-20 1989-03-07 General Motors Corporation JMOS transistor utilizing polysilicon sinks
JPH02303154A (ja) * 1989-05-18 1990-12-17 Fujitsu Ltd 半導体装置の製造方法
US5210438A (en) * 1989-05-18 1993-05-11 Fujitsu Limited Semiconductor resistance element and process for fabricating same
US5151387A (en) 1990-04-30 1992-09-29 Sgs-Thomson Microelectronics, Inc. Polycrystalline silicon contact structure
US5182627A (en) * 1991-09-30 1993-01-26 Sgs-Thomson Microelectronics, Inc. Interconnect and resistor for integrated circuits
US5581159A (en) * 1992-04-07 1996-12-03 Micron Technology, Inc. Back-to-back diode current regulator for field emission display
JP2537312Y2 (ja) * 1994-09-22 1997-05-28 株式会社壽 筆記具
US5530418A (en) * 1995-07-26 1996-06-25 Taiwan Semiconductor Manufacturing Company Method for shielding polysilicon resistors from hydrogen intrusion
US5847515A (en) * 1996-11-01 1998-12-08 Micron Technology, Inc. Field emission display having multiple brightness display modes
US6238993B1 (en) * 1999-04-27 2001-05-29 Taiwan Semiconductor Manufacturing Company Polysilicon load for 4T SRAM operation at cold temperatures
US20060057813A1 (en) * 2004-09-15 2006-03-16 Cheng-Hsiung Chen Method of forming a polysilicon resistor
CA2533225C (en) 2006-01-19 2016-03-22 Technologies Ltrim Inc. A tunable semiconductor component provided with a current barrier
US8536072B2 (en) 2012-02-07 2013-09-17 United Microelectronics Corp. Semiconductor process

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3248677A (en) * 1961-10-27 1966-04-26 Ibm Temperature compensated semiconductor resistor
US3683306A (en) * 1968-11-19 1972-08-08 Philips Corp Temperature compensated semiconductor resistor containing neutral inactive impurities
CH581904A5 (de) * 1974-08-29 1976-11-15 Centre Electron Horloger
US3943545A (en) * 1975-05-22 1976-03-09 Fairchild Camera And Instrument Corporation Low interelectrode leakage structure for charge-coupled devices
JPS5278382A (en) * 1975-12-25 1977-07-01 Nec Corp Semiconductor device
JPS52115192A (en) * 1976-03-24 1977-09-27 Hitachi Ltd Semiconductor resistance element
JPS5810863B2 (ja) * 1978-04-24 1983-02-28 株式会社日立製作所 半導体装置
US4297721A (en) * 1978-11-03 1981-10-27 Mostek Corporation Extremely low current load device for integrated circuit
US4251876A (en) * 1978-11-03 1981-02-17 Mostek Corporation Extremely low current load device for integrated circuit
US4381201A (en) * 1980-03-11 1983-04-26 Fujitsu Limited Method for production of semiconductor devices
US4489104A (en) * 1983-06-03 1984-12-18 Industrial Technology Research Institute Polycrystalline silicon resistor having limited lateral diffusion
JPS60109260A (ja) * 1983-11-15 1985-06-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 補償された多結晶シリコン抵抗素子

Also Published As

Publication number Publication date
EP0112097B1 (de) 1990-02-28
US4658378A (en) 1987-04-14
JPS59167048A (ja) 1984-09-20
EP0112097A3 (en) 1986-03-26
EP0112097A2 (de) 1984-06-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition