DE3380194D1 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
DE3380194D1
DE3380194D1 DE8383400644T DE3380194T DE3380194D1 DE 3380194 D1 DE3380194 D1 DE 3380194D1 DE 8383400644 T DE8383400644 T DE 8383400644T DE 3380194 T DE3380194 T DE 3380194T DE 3380194 D1 DE3380194 D1 DE 3380194D1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383400644T
Other languages
English (en)
Inventor
Hiromu Enomoto
Yasushi Yasuda
Yoshiki Shimauchi
Akinori Tahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3380194D1 publication Critical patent/DE3380194D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
DE8383400644T 1982-03-30 1983-03-29 Semiconductor device Expired DE3380194D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57050079A JPS58168255A (ja) 1982-03-30 1982-03-30 半導体装置

Publications (1)

Publication Number Publication Date
DE3380194D1 true DE3380194D1 (en) 1989-08-17

Family

ID=12849000

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383400644T Expired DE3380194D1 (en) 1982-03-30 1983-03-29 Semiconductor device

Country Status (4)

Country Link
US (1) US4888623A (de)
EP (1) EP0090738B1 (de)
JP (1) JPS58168255A (de)
DE (1) DE3380194D1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5167855A (en) * 1988-03-04 1992-12-01 University Research Corporation Ferroelectric liquid crystal compositions chiral haloalkoxy tail units
US5051612A (en) * 1989-02-10 1991-09-24 Texas Instruments Incorporated Prevention of parasitic mechanisms in junction isolated devices
US5150187A (en) * 1991-03-05 1992-09-22 Vlsi Technology, Inc. Input protection circuit for cmos devices
FR2687009B1 (fr) * 1992-01-31 1994-04-29 Sgs Thomson Microelectronics Composant de protection pour circuit automobile.
US5708289A (en) * 1996-02-29 1998-01-13 Sgs-Thomson Microelectronics, Inc. Pad protection diode structure
KR19980065435A (ko) * 1997-01-10 1998-10-15 김광호 서지보호 기능을 가지는 반도체장치
DE19737360C1 (de) * 1997-08-27 1999-01-21 Siemens Ag Hochfrequenzdiode und Verfahren zu deren Herstellung
DE19853743C2 (de) 1998-11-21 2000-10-12 Micronas Intermetall Gmbh Halbleiter-Bauelement mit wenigstens einer Zenerdiode und wenigstens einer dazu parallel geschalteten Schottky-Diode sowie Verfahren zum Herstellen der Halbleiter-Bauelemente
KR100689884B1 (ko) * 2005-02-15 2007-03-09 삼성전자주식회사 쇼트키 다이오드를 이용한 노이즈 제거를 위한 반도체 소자및 그 제조방법
JP2010177317A (ja) * 2009-01-28 2010-08-12 Sanyo Electric Co Ltd 半導体装置
CN101656272B (zh) * 2009-07-22 2011-08-03 上海宏力半导体制造有限公司 一种肖特基二极管及其制备方法
US8816503B2 (en) 2011-08-29 2014-08-26 Infineon Technologies Austria Ag Semiconductor device with buried electrode
JP2013073992A (ja) * 2011-09-27 2013-04-22 Semiconductor Components Industries Llc 半導体装置
US9257420B2 (en) * 2014-02-04 2016-02-09 Stmicroelectronics (Tours) Sas Overvoltage protection device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3878551A (en) * 1971-11-30 1975-04-15 Texas Instruments Inc Semiconductor integrated circuits having improved electrical isolation characteristics
GB1558281A (en) * 1975-07-31 1979-12-19 Tokyo Shibaura Electric Co Semiconductor device and logic circuit constituted by the semiconductor device
JPS5248064A (en) * 1975-10-13 1977-04-16 Mitsubishi Electric Corp Breaker operating mechanism control valve
US4079408A (en) * 1975-12-31 1978-03-14 International Business Machines Corporation Semiconductor structure with annular collector/subcollector region
US4110775A (en) * 1976-08-23 1978-08-29 Festa Thomas A Schottky diode with voltage limiting guard band
US4125855A (en) * 1977-03-28 1978-11-14 Bell Telephone Laboratories, Incorporated Integrated semiconductor crosspoint arrangement
US4233618A (en) * 1978-07-31 1980-11-11 Sprague Electric Company Integrated circuit with power transistor
US4214315A (en) * 1979-03-16 1980-07-22 International Business Machines Corporation Method for fabricating vertical NPN and PNP structures and the resulting product
JPS55145363A (en) * 1979-04-27 1980-11-12 Toshiba Corp Semiconductor device
JPS5829628B2 (ja) * 1979-11-22 1983-06-23 富士通株式会社 半導体記憶装置
US4402003A (en) * 1981-01-12 1983-08-30 Supertex, Inc. Composite MOS/bipolar power device
US4405933A (en) * 1981-02-04 1983-09-20 Rca Corporation Protective integrated circuit device utilizing back-to-back zener diodes
US4426655A (en) * 1981-08-14 1984-01-17 International Business Machines Corporation Memory cell resistor device
JPS5878452A (ja) * 1981-11-04 1983-05-12 Toshiba Corp 半導体装置の製造方法
JPS58121663A (ja) * 1982-01-13 1983-07-20 Nec Corp 半導体集積回路装置

Also Published As

Publication number Publication date
EP0090738B1 (de) 1989-07-12
EP0090738A2 (de) 1983-10-05
US4888623A (en) 1989-12-19
JPS58168255A (ja) 1983-10-04
JPH0441500B2 (de) 1992-07-08
EP0090738A3 (en) 1986-02-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee