DE3379442D1 - Double heterostructure semiconductor laser with periodic structure formed in guide layer - Google Patents

Double heterostructure semiconductor laser with periodic structure formed in guide layer

Info

Publication number
DE3379442D1
DE3379442D1 DE8383110135T DE3379442T DE3379442D1 DE 3379442 D1 DE3379442 D1 DE 3379442D1 DE 8383110135 T DE8383110135 T DE 8383110135T DE 3379442 T DE3379442 T DE 3379442T DE 3379442 D1 DE3379442 D1 DE 3379442D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
structure formed
periodic structure
guide layer
double heterostructure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383110135T
Other languages
English (en)
Inventor
Ikuo Mito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP57178824A external-priority patent/JPH0632322B2/ja
Priority claimed from JP4347783A external-priority patent/JPS59169191A/ja
Priority claimed from JP5950583A external-priority patent/JPS59184585A/ja
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3379442D1 publication Critical patent/DE3379442D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE8383110135T 1982-10-12 1983-10-11 Double heterostructure semiconductor laser with periodic structure formed in guide layer Expired DE3379442D1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP57178824A JPH0632322B2 (ja) 1982-10-12 1982-10-12 単一軸モード半導体レーザ
JP4347783A JPS59169191A (ja) 1983-03-16 1983-03-16 単一軸モ−ド半導体レ−ザ
JP5950583A JPS59184585A (ja) 1983-04-05 1983-04-05 単一軸モ−ド半導体レ−ザ

Publications (1)

Publication Number Publication Date
DE3379442D1 true DE3379442D1 (en) 1989-04-20

Family

ID=27291561

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383110135T Expired DE3379442D1 (en) 1982-10-12 1983-10-11 Double heterostructure semiconductor laser with periodic structure formed in guide layer

Country Status (4)

Country Link
US (1) US4618959A (de)
EP (1) EP0106305B1 (de)
CA (1) CA1197308A (de)
DE (1) DE3379442D1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59205787A (ja) * 1983-05-09 1984-11-21 Nec Corp 単一軸モ−ド半導体レ−ザ
US4751710A (en) * 1984-07-26 1988-06-14 Nec Corporation Semiconductor laser device
JPS61160987A (ja) * 1985-01-09 1986-07-21 Nec Corp 集積型半導体光素子とその製造方法
US4716570A (en) * 1985-01-10 1987-12-29 Sharp Kabushiki Kaisha Distributed feedback semiconductor laser device
JPS62194691A (ja) * 1986-02-21 1987-08-27 Kokusai Denshin Denwa Co Ltd <Kdd> 光導波路領域を有する半導体光集積装置の製造方法
US4908833A (en) * 1989-01-27 1990-03-13 American Telephone And Telegraph Company Distributed feedback laser for frequency modulated communication systems
US4905253A (en) * 1989-01-27 1990-02-27 American Telephone And Telegraph Company Distributed Bragg reflector laser for frequency modulated communication systems
US5023944A (en) * 1989-09-05 1991-06-11 General Dynamics Corp./Electronics Division Optical resonator structures
US6026106A (en) * 1997-03-26 2000-02-15 Mitsubishi Denki Kabushiki Kaisha Composite optical device
JP2000323789A (ja) * 1999-05-11 2000-11-24 Nec Corp 窓型半導体レーザおよびその製造方法
JP2002169022A (ja) * 2000-12-04 2002-06-14 Nippon Sheet Glass Co Ltd 光学素子およびそれを用いた分光装置および集積光学装置
CN112821199A (zh) * 2021-02-05 2021-05-18 中国工程物理研究院应用电子学研究所 一种阶梯波导厚度的半导体激光器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4190813A (en) * 1977-12-28 1980-02-26 Bell Telephone Laboratories, Incorporated Strip buried heterostructure laser
US4464762A (en) * 1982-02-22 1984-08-07 Bell Telephone Laboratories, Incorporated Monolithically integrated distributed Bragg reflector laser

Also Published As

Publication number Publication date
US4618959A (en) 1986-10-21
CA1197308A (en) 1985-11-26
EP0106305A3 (en) 1986-03-12
EP0106305B1 (de) 1989-03-15
EP0106305A2 (de) 1984-04-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee