DE3378509D1 - Semiconductor protective device - Google Patents

Semiconductor protective device

Info

Publication number
DE3378509D1
DE3378509D1 DE8383109072T DE3378509T DE3378509D1 DE 3378509 D1 DE3378509 D1 DE 3378509D1 DE 8383109072 T DE8383109072 T DE 8383109072T DE 3378509 T DE3378509 T DE 3378509T DE 3378509 D1 DE3378509 D1 DE 3378509D1
Authority
DE
Germany
Prior art keywords
protective device
semiconductor protective
semiconductor
protective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383109072T
Other languages
English (en)
Inventor
Katsuji Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3378509D1 publication Critical patent/DE3378509D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE8383109072T 1982-09-14 1983-09-14 Semiconductor protective device Expired DE3378509D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57159956A JPS5948951A (ja) 1982-09-14 1982-09-14 半導体保護装置

Publications (1)

Publication Number Publication Date
DE3378509D1 true DE3378509D1 (en) 1988-12-22

Family

ID=15704838

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383109072T Expired DE3378509D1 (en) 1982-09-14 1983-09-14 Semiconductor protective device

Country Status (4)

Country Link
US (1) US4543593A (de)
EP (1) EP0103306B1 (de)
JP (1) JPS5948951A (de)
DE (1) DE3378509D1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4484244A (en) * 1982-09-22 1984-11-20 Rca Corporation Protection circuit for integrated circuit devices
IT1217298B (it) * 1985-05-30 1990-03-22 Sgs Thomson Microelectronics Dispositivo di protezione da scariche elettrostatiche,in particolare per circuiti integrati bipolari
KR900008746B1 (ko) * 1986-11-19 1990-11-29 삼성전자 주식회사 접합 파괴장치 반도체장치
US4987465A (en) * 1987-01-29 1991-01-22 Advanced Micro Devices, Inc. Electro-static discharge protection device for CMOS integrated circuit inputs
EP0308667B1 (de) * 1987-09-23 1994-05-25 Siemens Aktiengesellschaft Absaugelektrode zur Verkürzung der Ausschaltzeit bei einem Halbleiterbauelement
US5061999A (en) * 1987-11-13 1991-10-29 Matsushita Electric Industrial Co., Ltd. Multiplex signal processing apparatus
US5212618A (en) * 1990-05-03 1993-05-18 Linear Technology Corporation Electrostatic discharge clamp using vertical NPN transistor
KR960015347B1 (ko) * 1990-09-10 1996-11-09 후지쓰 가부시끼가이샤 반도체장치
US5359211A (en) * 1991-07-18 1994-10-25 Harris Corporation High voltage protection using SCRs
EP0673072B1 (de) * 1994-03-18 2003-05-28 Hitachi, Ltd. Halbleiteranordnung mit einem lateralen Bipolartransistor
US5475340A (en) * 1994-05-23 1995-12-12 Delco Electronics Corporation Active biasing circuit for an epitaxial region in a fault-tolerant, vertical pnp output transistor
US5708289A (en) * 1996-02-29 1998-01-13 Sgs-Thomson Microelectronics, Inc. Pad protection diode structure
US5663860A (en) * 1996-06-28 1997-09-02 Harris Corporation High voltage protection circuits
IT1296832B1 (it) * 1997-12-02 1999-08-02 Sgs Thomson Microelectronics Struttura integrata di protezione con dispositivi a soglia di conduzione inversa prestabilita di polarizzazione
US7327541B1 (en) 1998-06-19 2008-02-05 National Semiconductor Corporation Operation of dual-directional electrostatic discharge protection device
US6365924B1 (en) * 1998-06-19 2002-04-02 National Semiconductor Corporation Dual direction over-voltage and over-current IC protection device and its cell structure
JP2000223499A (ja) * 1999-01-28 2000-08-11 Mitsumi Electric Co Ltd 静電保護装置
JP4176564B2 (ja) * 2003-06-23 2008-11-05 株式会社東芝 ウェハ移載装置及びこれを用いた半導体装置の製造方法
JP4864801B2 (ja) * 2007-04-18 2012-02-01 ミサワホーム株式会社 壁パネルの連結構造

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3904931A (en) * 1973-08-03 1975-09-09 Rca Corp Overvoltage protection circuit
NL176322C (nl) * 1976-02-24 1985-03-18 Philips Nv Halfgeleiderinrichting met beveiligingsschakeling.
JPS55113358A (en) * 1979-02-23 1980-09-01 Hitachi Ltd Semiconductor device
JPS55128857A (en) * 1979-03-28 1980-10-06 Hitachi Ltd Integrated circuit device
JPS55140263A (en) * 1979-04-19 1980-11-01 Mitsubishi Electric Corp Surge preventive circuit for bipolar integrated circuit
IT1151504B (it) * 1981-01-30 1986-12-24 Rca Corp Circuito di protezione per dispositivi a circuito integrato
US4400711A (en) * 1981-03-31 1983-08-23 Rca Corporation Integrated circuit protection device
US4463369A (en) * 1981-06-15 1984-07-31 Rca Integrated circuit overload protection device

Also Published As

Publication number Publication date
EP0103306A2 (de) 1984-03-21
JPH037144B2 (de) 1991-01-31
EP0103306B1 (de) 1988-11-17
US4543593A (en) 1985-09-24
EP0103306A3 (en) 1985-08-28
JPS5948951A (ja) 1984-03-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee