DE3372431D1 - Semiconductor injection lasers - Google Patents
Semiconductor injection lasersInfo
- Publication number
- DE3372431D1 DE3372431D1 DE8383100522T DE3372431T DE3372431D1 DE 3372431 D1 DE3372431 D1 DE 3372431D1 DE 8383100522 T DE8383100522 T DE 8383100522T DE 3372431 T DE3372431 T DE 3372431T DE 3372431 D1 DE3372431 D1 DE 3372431D1
- Authority
- DE
- Germany
- Prior art keywords
- injection lasers
- semiconductor injection
- semiconductor
- lasers
- injection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000002347 injection Methods 0.000 title 1
- 239000007924 injection Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0281—Coatings made of semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/363,193 US4751708A (en) | 1982-03-29 | 1982-03-29 | Semiconductor injection lasers |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3372431D1 true DE3372431D1 (en) | 1987-08-13 |
Family
ID=23429216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383100522T Expired DE3372431D1 (en) | 1982-03-29 | 1983-01-21 | Semiconductor injection lasers |
Country Status (4)
Country | Link |
---|---|
US (1) | US4751708A (de) |
EP (1) | EP0090135B1 (de) |
JP (1) | JPS58171881A (de) |
DE (1) | DE3372431D1 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4840922A (en) * | 1986-07-29 | 1989-06-20 | Ricoh Company, Ltd. | Method of manufacturing masked semiconductor laser |
JPS63198390A (ja) * | 1987-02-13 | 1988-08-17 | Ricoh Co Ltd | マスク半導体レ−ザ−の製作方法 |
NL8700904A (nl) * | 1987-04-16 | 1988-11-16 | Philips Nv | Halfgeleiderlaserinrichting en werkwijze voor het vervaardigen daarvan. |
US4828935A (en) * | 1988-03-30 | 1989-05-09 | The United States Of America As Represented By The Secretary Of The Navy | Passivating layer for III-V semiconductor materials |
US4910166A (en) * | 1989-01-17 | 1990-03-20 | General Electric Company | Method for partially coating laser diode facets |
JPH0834337B2 (ja) * | 1990-04-02 | 1996-03-29 | シャープ株式会社 | 半導体レーザ素子の製造方法 |
JP2941364B2 (ja) * | 1990-06-19 | 1999-08-25 | 株式会社東芝 | 半導体レーザ装置 |
JP3672106B2 (ja) * | 1994-09-28 | 2005-07-13 | シャープ株式会社 | 端面成長窓型半導体レーザ素子の製造方法 |
US5665637A (en) * | 1995-11-17 | 1997-09-09 | Lucent Technologies Inc. | Passivated faceted article comprising a semiconductor laser |
JPH09167873A (ja) * | 1995-12-15 | 1997-06-24 | Mitsubishi Electric Corp | 半導体レーザ装置 |
DE10312214B4 (de) * | 2003-03-19 | 2008-11-20 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen von mindestens einer Mesa- oder Stegstruktur oder von mindestens einem elektrisch gepumpten Bereich in einer Schicht oder Schichtenfolge |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5527474B2 (de) * | 1971-12-17 | 1980-07-21 | ||
US3849738A (en) * | 1973-04-05 | 1974-11-19 | Bell Telephone Labor Inc | Multilayer antireflection coatings for solid state lasers |
US4062035A (en) * | 1975-02-05 | 1977-12-06 | Siemens Aktiengesellschaft | Luminescent diode |
US4001719A (en) * | 1975-08-13 | 1977-01-04 | Bell Telephone Laboratories, Incorporated | Fabrication of a self-aligned mirror on a solid-state laser for controlling filamentation |
US4178564A (en) * | 1976-01-15 | 1979-12-11 | Rca Corporation | Half wave protection layers on injection lasers |
CA1115401A (en) * | 1977-10-11 | 1981-12-29 | Peter A. Barnes | Glass coating for semiconductor optical devices |
JPS5527474A (en) * | 1978-08-19 | 1980-02-27 | Arata Kogyosho:Kk | Manufacture of spherical head for use of oiler or the like of diesel engine |
NL7903197A (nl) * | 1979-04-24 | 1980-10-28 | Philips Nv | Werkwijze voor het vervaardigen van een elektrolumines- cerende halfgeleiderinrichting en elektroluminescerende halfgeleiderinrichting vervaardigd volgens de werkwijze |
US4354198A (en) * | 1980-05-30 | 1982-10-12 | International Business Machines Corporation | Zinc-sulphide capping layer for gallium-arsenide device |
-
1982
- 1982-03-29 US US06/363,193 patent/US4751708A/en not_active Expired - Fee Related
- 1982-11-17 JP JP57200513A patent/JPS58171881A/ja active Granted
-
1983
- 1983-01-21 DE DE8383100522T patent/DE3372431D1/de not_active Expired
- 1983-01-21 EP EP83100522A patent/EP0090135B1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0090135B1 (de) | 1987-07-08 |
JPS6348438B2 (de) | 1988-09-29 |
US4751708A (en) | 1988-06-14 |
EP0090135A1 (de) | 1983-10-05 |
JPS58171881A (ja) | 1983-10-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2115217B (en) | Semiconductor lasers | |
GB2115218B (en) | Semiconductor laser | |
GB2124402B (en) | Injection laser packages | |
GB2131610B (en) | Semiconductor laser | |
DE3477715D1 (en) | Semiconductor lasers | |
GB8333927D0 (en) | Semi-conductor laser | |
EP0136839A3 (en) | Semiconductor lasers | |
GB2115608B (en) | Semi-conductor lasers | |
DE3376936D1 (en) | Semiconductor laser | |
DE3174505D1 (en) | Semiconductor injection laser | |
DE3377183D1 (en) | Semiconductor laser | |
GB8314965D0 (en) | Semiconductor laser | |
DE3372431D1 (en) | Semiconductor injection lasers | |
GB2098386B (en) | Semiconductor lasers | |
JPS57180193A (en) | Semiconductor injection laser | |
GB2130007B (en) | Semiconductor laser | |
DE3377182D1 (en) | Semiconductor laser | |
GB2080014B (en) | Semiconductor lasers | |
DE3377606D1 (en) | Semiconductor laser | |
GB2149572B (en) | Semiconductor diode lasers | |
GB2076214B (en) | Semiconductor lasers | |
GB2189341B (en) | Lasers | |
GB2118766B (en) | Heterostructure semiconductor laser | |
GB2127218B (en) | Semiconductor laser | |
GB8424045D0 (en) | Semiconductor lasers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |