DE3369427D1 - Ion implantation process for compound semiconductor - Google Patents

Ion implantation process for compound semiconductor

Info

Publication number
DE3369427D1
DE3369427D1 DE8383109941T DE3369427T DE3369427D1 DE 3369427 D1 DE3369427 D1 DE 3369427D1 DE 8383109941 T DE8383109941 T DE 8383109941T DE 3369427 T DE3369427 T DE 3369427T DE 3369427 D1 DE3369427 D1 DE 3369427D1
Authority
DE
Germany
Prior art keywords
ion implantation
compound semiconductor
implantation process
semiconductor
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383109941T
Other languages
English (en)
Inventor
Rodney Trevor Hodgson
Thomas Nelson Jackson
Hans Stephan Rupprecht
Jerry Macpherson Woodall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3369427D1 publication Critical patent/DE3369427D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
DE8383109941T 1982-11-10 1983-10-05 Ion implantation process for compound semiconductor Expired DE3369427D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/440,655 US4472206A (en) 1982-11-10 1982-11-10 Method of activating implanted impurities in broad area compound semiconductors by short time contact annealing

Publications (1)

Publication Number Publication Date
DE3369427D1 true DE3369427D1 (en) 1987-02-26

Family

ID=23749642

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383109941T Expired DE3369427D1 (en) 1982-11-10 1983-10-05 Ion implantation process for compound semiconductor

Country Status (4)

Country Link
US (1) US4472206A (de)
EP (1) EP0111085B1 (de)
JP (1) JPS5988400A (de)
DE (1) DE3369427D1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6130030A (ja) * 1984-07-12 1986-02-12 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 多元素半導体のアニ−ル方法
US4576652A (en) * 1984-07-12 1986-03-18 International Business Machines Corporation Incoherent light annealing of gallium arsenide substrate
US4708883A (en) * 1984-07-12 1987-11-24 International Business Machines Corporation Annealing process
US4592793A (en) * 1985-03-15 1986-06-03 International Business Machines Corporation Process for diffusing impurities into a semiconductor body vapor phase diffusion of III-V semiconductor substrates
US4820651A (en) * 1985-11-01 1989-04-11 Gte Laboratories Incorporated Method of treating bodies of III-V compound semiconductor material
WO1987004006A1 (en) * 1985-12-18 1987-07-02 Allied Corporation Proximity diffusion method for group iii-v semiconductors
JPH01120818A (ja) * 1987-09-23 1989-05-12 Siemens Ag 低伝達抵抗オーム接触の形成方法
US4879259A (en) * 1987-09-28 1989-11-07 The Board Of Trustees Of The Leland Stanford Junion University Rapid thermal annealing of gallium arsenide with trimethyl arsenic overpressure
JPH01220822A (ja) * 1988-02-29 1989-09-04 Mitsubishi Electric Corp 化合物半導体装置の製造方法
US4882235A (en) * 1988-03-02 1989-11-21 Raytheon Company Liquid crystal cell window
US4927773A (en) * 1989-06-05 1990-05-22 Santa Barbara Research Center Method of minimizing implant-related damage to a group II-VI semiconductor material
US5017508A (en) * 1989-06-29 1991-05-21 Ixys Corporation Method of annealing fully-fabricated, radiation damaged semiconductor devices
US5196370A (en) * 1990-11-08 1993-03-23 Matsushita Electronics Corporation Method of manufacturing an arsenic-including compound semiconductor device
US5294557A (en) * 1991-08-26 1994-03-15 The United States Of America As Represented By The Secretary Of The Navy Implanting impurities in semiconductors and semiconductor implanted with impurities
US20060276038A1 (en) * 2005-06-03 2006-12-07 Pun Arthur F Thermal desorption of oxide from surfaces

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3969164A (en) * 1974-09-16 1976-07-13 Bell Telephone Laboratories, Incorporated Native oxide technique for preparing clean substrate surfaces
JPS5942470B2 (ja) * 1975-12-15 1984-10-15 日本電気株式会社 ハンドウタイソウチノセイゾウホウホウ
US4174982A (en) * 1977-06-06 1979-11-20 Rockwell International Corporation Capless annealing compound semiconductors
US4135952A (en) * 1977-10-03 1979-01-23 Hughes Aircraft Company Process for annealing semiconductor materials
US4226667A (en) * 1978-10-31 1980-10-07 Bell Telephone Laboratories, Incorporated Oxide masking of gallium arsenide
JPS55158628A (en) * 1979-05-30 1980-12-10 Toshiba Corp Method of treating compound semiconductor
JPS5650520A (en) * 1979-10-01 1981-05-07 Sony Corp Processing method of semiconductor substrate
US4312681A (en) * 1980-04-23 1982-01-26 International Business Machines Corporation Annealing of ion implanted III-V compounds in the presence of another III-V

Also Published As

Publication number Publication date
EP0111085A2 (de) 1984-06-20
EP0111085A3 (en) 1985-05-15
US4472206A (en) 1984-09-18
EP0111085B1 (de) 1987-01-21
JPS6236000B2 (de) 1987-08-05
JPS5988400A (ja) 1984-05-22

Similar Documents

Publication Publication Date Title
DE3279631D1 (en) Semiconductor processing involving ion implantation
EP0097379A3 (en) Method for manufacturing semiconductor devices
DE3366564D1 (en) Method for manufacturing semiconductor device
DE3380308D1 (en) Process for cell modification
GB2075921B (en) Processing semiconductor wafers
GB8320110D0 (en) Wafer
DE3367221D1 (en) Process for modifying rubbers
DE3369427D1 (en) Ion implantation process for compound semiconductor
DE3380865D1 (en) Semiconductor timer
DE3375054D1 (en) Masking process for semiconductor device manufacture
GB2121602B (en) Semiconductor fabrication
HUT37018A (en) Method for processing soyq
GB8300403D0 (en) Semiconductor arrangement
PL245380A1 (en) Process for manufacturing proteins
GB2167897B (en) Semiconductor manufacturing methods
ATA397183A (de) Steuereinrichtung fuer den antrieb eines fahrzeuges mit differenzgeschwindigkeitslenkung
GB8315614D0 (en) Wafer metallization processes
PT77867B (en) Process for preparing aralkyltriazole compounds
DE3367632D1 (en) Process for elaborating ternary or quaternary semiconductor compounds
IL70220A0 (en) Process for 1-oxa-beta-lactams
PH21657A (en) 7b-amino-2-alkyl-1-oxa-1 dethiacephalosporin compounds and process for preparing said compound
GB8316317D0 (en) Semiconductor preparation
GB2133928B (en) Coatings for semiconductor devices
DE3368607D1 (en) Improved process for making thiobiscarbamates
GB2115609B (en) Semiconductor structure manufacturing method

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee