DE3369033D1 - Semiconductor laser substrate and process for its production - Google Patents

Semiconductor laser substrate and process for its production

Info

Publication number
DE3369033D1
DE3369033D1 DE8383401626T DE3369033T DE3369033D1 DE 3369033 D1 DE3369033 D1 DE 3369033D1 DE 8383401626 T DE8383401626 T DE 8383401626T DE 3369033 T DE3369033 T DE 3369033T DE 3369033 D1 DE3369033 D1 DE 3369033D1
Authority
DE
Germany
Prior art keywords
production
semiconductor laser
laser substrate
substrate
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383401626T
Other languages
German (de)
English (en)
Inventor
Loic Demeure
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE3369033D1 publication Critical patent/DE3369033D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02315—Support members, e.g. bases or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Ceramic Products (AREA)
  • Die Bonding (AREA)
DE8383401626T 1982-08-12 1983-08-08 Semiconductor laser substrate and process for its production Expired DE3369033D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8214042A FR2531819A1 (fr) 1982-08-12 1982-08-12 Embase pour laser a semi-conducteur et son procede de fabrication

Publications (1)

Publication Number Publication Date
DE3369033D1 true DE3369033D1 (en) 1987-02-12

Family

ID=9276828

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383401626T Expired DE3369033D1 (en) 1982-08-12 1983-08-08 Semiconductor laser substrate and process for its production

Country Status (6)

Country Link
US (1) US4584688A (enExample)
EP (1) EP0101374B1 (enExample)
JP (1) JPS5948978A (enExample)
CA (1) CA1209235A (enExample)
DE (1) DE3369033D1 (enExample)
FR (1) FR2531819A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4688076A (en) * 1983-04-22 1987-08-18 The Charles Stark Draper Laboratory, Inc. Noise reducing heat sink for semiconductor laser diodes
FR2550023B1 (fr) * 1983-07-25 1987-03-27 Auffret Rene Source lumineuse infrarouge comprenant un laser a semiconducteur associe a des moyens de selection de mode et d'asservissement en puissance
US4820659A (en) * 1986-07-16 1989-04-11 General Electric Company Method of making a semiconductor device assembly
US4797728A (en) * 1986-07-16 1989-01-10 General Electric Company Semiconductor device assembly and method of making same
JPH0750813B2 (ja) * 1988-05-23 1995-05-31 三菱電機株式会社 半導体レーザ素子用サブマウント
US6869231B2 (en) * 2002-05-01 2005-03-22 Jds Uniphase Corporation Transmitters, receivers, and transceivers including an optical bench
US7061949B1 (en) * 2002-08-16 2006-06-13 Jds Uniphase Corporation Methods, apparatus, and systems with semiconductor laser packaging for high modulation bandwidth
US20060038302A1 (en) * 2004-08-19 2006-02-23 Kejun Zeng Thermal fatigue resistant tin-lead-silver solder

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5314588A (en) * 1976-07-26 1978-02-09 Mitsubishi Electric Corp Optical device
JPS55148483A (en) * 1979-05-08 1980-11-19 Canon Inc Semiconductor laser device
JPS56104485A (en) * 1980-01-23 1981-08-20 Canon Inc Semiconductor laser device
NL180365C (nl) * 1979-06-11 1987-02-02 Philips Nv Werkwijze voor het vervaardigen van koelblokken voor halfgeleiderlasers, alsmede halfgeleiderlaser die een volgens deze werkwijze vervaardigd koelblok bevat.
NL181963C (nl) * 1979-06-26 1987-12-01 Philips Nv Halfgeleiderlaserinrichting.

Also Published As

Publication number Publication date
US4584688A (en) 1986-04-22
EP0101374B1 (fr) 1987-01-07
CA1209235A (en) 1986-08-05
FR2531819A1 (fr) 1984-02-17
FR2531819B1 (enExample) 1985-03-08
EP0101374A3 (en) 1984-04-11
JPS5948978A (ja) 1984-03-21
EP0101374A2 (fr) 1984-02-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee